公开(公告)号：WO2011008212A1

公开(公告)日：2011-01-20

申请号：PCT/US2009/050833

申请日：2009-07-16

Applicant: LAM RESEARCH CORPORATION ,  KOLICS, Artur

Inventor： KOLICS, Artur

IPC: C25D21/12 ,  H01L21/70

CPC classification number: H01L21/02697 ,  C09D5/24 ,  C23C18/1601 ,  C23C18/1617 ,  C23C18/34 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H05K3/244

Abstract: One embodiment of the present invention is a method of electroless deposition of cap layers for fabricating an integrated circuit. The method includes controlling the composition of an electroless deposition bath so as to substantially maintain the electroless deposition properties of the bath. Other embodiments of the present invention include electroless deposition solutions. Still another embodiment of the present invention is a composition used to recondition an electroless deposition bath.

Abstract translation: 本发明的一个实施例是用于制造集成电路的盖层的无电沉积方法。 该方法包括控制无电沉积浴的组成，以便基本保持浴的无电沉积性能。 本发明的其它实施方案包括无电沉积溶液。 本发明的另一个实施方案是用于重新形成无电沉积浴的组合物。

公开(公告)号：WO2004114386B1

公开(公告)日：2005-09-15

申请号：PCT/US2004019349

申请日：2004-06-16

Applicant: BLUE29 CORP ,  IVANOV IGOR C ,  ZHANG WEIGUO ,  KOLICS ARTUR

Inventor： IVANOV IGOR C ,  ZHANG WEIGUO ,  KOLICS ARTUR

IPC: H01L21/288 ,  H01L21/768

CPC classification number: H01L21/288 ,  H01L21/768

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, methods are provide which include loading a topography into a chamber and supplying fluids to an enclosed area about the topography. In particular, a method is provided for forming a hydrated metal oxide layer. In addition, a method is provided for selectively depositing a dielectric layer and a metal layer upon a topography. A topography having a single layer with at least four elements lining a lower surface and sidewalls of a metal feature is also provided. A process chamber which includes a gate configured to either seal or provide an air passage to the chamber and a substrate holder comprising a clamping jaw with a lever are contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided.

Abstract translation: 提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。 通常，提供方法，其包括将地形装载到室中并将流体供应到关于地形的封闭区域。 特别地，提供了形成水合金属氧化物层的方法。 此外，提供了一种用于在形貌上选择性地沉积电介质层和金属层的方法。 还提供了具有单层的形状，其具有衬在下表面和金属特征的侧壁的至少四个元件。 一种处理室，其包括构造成密封或提供​​到腔室的空气通道的门，以及包括具有杠杆的夹爪的衬底保持器。 还提供了具有布置在基板保持器上方的储存器的处理室。

公开(公告)号：WO2010027950A4

公开(公告)日：2010-08-05

申请号：PCT/US2009055572

申请日：2009-09-01

Applicant: LAM RES ,  LI SHIJIAN ,  KOLICS ARTUR K ,  ARUNAGIRI TIRUCHIRAPALLI N

Inventor： LI SHIJIAN ,  KOLICS ARTUR K ,  ARUNAGIRI TIRUCHIRAPALLI N

IPC: C23C18/16 ,  C23C18/18 ,  C23C18/54

CPC classification number: C23C18/50 ,  C23C18/1689 ,  C25D5/48

Abstract: Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after plating processes are provided. In particular, solutions are provided which are free of oxidizing agents and include a non-metal pH adjusting agent in sufficient concentration such that the solution has a pH between approximately 7.5 and approximately 12.0. In some cases, a solution may include a chelating agent. In addition or alternatively, a solution may include at least two different types of complexing agents each offering a single point of attachment for binding metal ions via respectively different functional groups. In any case, at least one of the complexing agents or the chelating agent includes a non-amine or non-imine functional group. An embodiment of a method for processing a substrate includes plating a metal layer upon the substrate and subsequently exposing the substrate to a solution comprising the aforementioned make-up.

Abstract translation: 提供了用于防止在电镀工艺之后在衬底上形成金属颗粒缺陷物质的方法和解决方案。 具体而言，提供不含氧化剂的溶液，并且包含足够浓度的非金属pH调节剂，使得溶液的pH在约7.5至约12.0之间。 在一些情况下，溶液可以包含螯合剂。 另外或可选地，溶液可以包括至少两种不同类型的络合剂，每种络合剂提供通过各自不同的官能团结合金属离子的单一连接点。 在任何情况下，络合剂或螯合剂中的至少一种包括非胺或非亚胺官能团。 用于处理衬底的方法的实施例包括在衬底上电镀金属层并随后将衬底暴露于包含前述化妆品的溶液。

公开(公告)号：WO2010028186A1

公开(公告)日：2010-03-11

申请号：PCT/US2009/055943

申请日：2009-09-03

Applicant: LAM RESEARCH CORPORATION ,  KOLICS, Artur ,  REDEKER, Fritz

Inventor： KOLICS, Artur ,  REDEKER, Fritz

IPC: C11D7/32

CPC classification number: H01L21/02057 ,  C09K13/00 ,  C11D3/0073 ,  C11D3/0084 ,  C11D7/16 ,  C11D7/261 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

Abstract: Presented is a cleaning solution according to one embodiment of the present invention that includes a corrosion inhibitor, a solubilizing agent, an oxygen scavenger, and a complexing agent also capable as a pH adjustor. Another embodiment of the present invention includes cleaning solutions that include a pH adjustor, an optional complexing agent, and a corrosion inhibitor. The cleaning solutions may have a solubilizing agent optionally present, may have a surfactant optionally present, and may have a dielectric etchant optionally present.

Abstract translation: 提出了根据本发明的一个实施方案的清洁溶液，其包括腐蚀抑制剂，增溶剂，除氧剂和还可以作为pH调节剂的络合剂。 本发明的另一个实施方案包括包括pH调节剂，任选的络合剂和腐蚀抑制剂的清洁溶液。 清洁溶液可以具有任选存在的增溶剂，可以具有任选存在的表面活性剂，并且可以具有任选存在的电介质蚀刻剂。

公开(公告)号：WO2004099466A2

公开(公告)日：2004-11-18

申请号：PCT/US2004/013944

申请日：2004-05-05

Applicant: BLUE29 CORPORATION ,  KOLICS, Artur ,  PETROV, Nicolai ,  TING, Chiu ,  IVANOV, Igor, C.

Inventor： KOLICS, Artur ,  PETROV, Nicolai ,  TING, Chiu ,  IVANOV, Igor, C.

IPC: C23C18/16

CPC classification number: H01L21/76849 ,  C23C18/1608 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76874

Abstract: The method for selective deposition of Co-W-P system films onto copper with palladium-free activation consists of creating hydrogen-rich complexes on the metal surface prior to deposition. More specifically, the method consists of creating the aforementioned complexes on the copper surfaces prior to electroless deposition of a Co-W-P system films. This is achieved by contacting the copper surface with reducing agents for a short period of time and under an elevated temperature. Such reducing agents comprise a hypophosphorous-acid-based or borane-based reducing agents such as dimethylamine borane. Hypophosphorous acid is preferred since it is more compatible with the electroless deposition solution.

Abstract translation: Co-W-P系膜在铜上选择性沉积无钯活化的方法包括在沉积前在金属表面上产生富含氢的配合物。 更具体地，该方法包括在Co-W-P系膜的无电沉积之前在铜表面上产生上述配合物。 这是通过使铜表面与还原剂在短时间内和在高温下接触而实现的。 这种还原剂包括次磷酸或基于硼烷的还原剂如二甲胺硼烷。 次磷酸是优选的，因为它与无电解沉积溶液更相容。

公开(公告)号：WO2004081256A1

公开(公告)日：2004-09-23

申请号：PCT/US2004/006607

申请日：2004-03-05

Applicant: BLUE29 CORPORATION ,  IVANOV, Igor, C. ,  KOLICS, Artur ,  PETROV, Nicolai ,  TING, Chiu

Inventor： KOLICS, Artur ,  PETROV, Nicolai ,  TING, Chiu

IPC: C23C18/50

CPC classification number: H01L21/288 ,  C23C18/36 ,  C23C18/50 ,  H01L21/76849

Abstract: The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co-Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100- 5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.

Abstract translation: 本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有高抗氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。 无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。 来自引发剂的少量（100-5000ppm）元素也构成无电镀膜，与无引发剂的沉积浴相比，预期可进一步提高所得膜的阻隔性能。 这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

公开(公告)号：WO2012007865A3

公开(公告)日：2012-05-18

申请号：PCT/IB2011052907

申请日：2011-07-01

Applicant: LAM RES CORP ,  LAM RES AG ,  KOLICS ARTUR ,  REDEKER FRITZ

Inventor： KOLICS ARTUR ,  REDEKER FRITZ

IPC: H01L21/288

CPC classification number: H05K1/09 ,  C23C18/1607 ,  C23C18/1662 ,  C23C18/1834 ,  C23C18/1844 ,  C23C18/31 ,  C23C18/40 ,  C23C18/50 ,  C23C18/52 ,  C25D3/12 ,  C25D3/20 ,  C25D3/22 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D3/48 ,  C25D3/50 ,  C25D3/54 ,  C25D3/562 ,  C25D5/02 ,  C25D7/123 ,  C25D15/00 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One aspect of the present invention is a method of processing a substrate. In one embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electroless deposition solution and electrolessly depositing a metal matrix and co-depositing the metal particles. In another embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electrochemical plating solution and electrochemically plating a metal matrix and co-depositing the metal particles. Another aspect of the present invention is a mixture for the formation of an electrical conductor on or in a substrate. Another aspect of the present invention is an electronic device.

Abstract translation: 本发明的一个方面是一种处理衬底的方法。 在一个实施方案中，该方法包括通过提供包含金属颗粒和无电镀沉积溶液的混合物和无电沉积金属基质并共沉积金属颗粒在基底上或基底上形成电导体。 在另一个实施方案中，该方法包括通过提供包含金属颗粒和电化学电镀溶液的混合物以及电化学镀金属基质并共沉积金属颗粒在基底上或基底上形成电导体。 本发明的另一方面是用于在基底上或基底中形成电导体的混合物。 本发明的另一方面是电子设备。

公开(公告)号：WO2012056390A2

公开(公告)日：2012-05-03

申请号：PCT/IB2011/054740

申请日：2011-10-24

Applicant: LAM RESEARCH CORPORATION ,  LAM RESEARCH AG ,  KOLICS, Artur

Inventor： KOLICS, Artur

IPC: H01B1/02 ,  C23C18/52 ,  C23C18/34 ,  C23C18/40 ,  C23C18/44

CPC classification number: H01B1/02 ,  C23C18/31 ,  C23C18/32 ,  C23C18/36 ,  C23C18/48 ,  C23C18/50

Abstract: One aspect of the present invention is a deposition solution to deposit metals and metal alloys such as for fabrication of electronic devices. According to one embodiment, the deposition solution comprises metal ions and a pH adjustor. The pH adjustor comprises a functional group having a general formula (R 1 R 2 N)(R 3 R 4 N)C=N- R 5 where: N is nitrogen; C is carbon; and R- 1 , R 2 , R 3 , R 4 , and R 5 are the same or different and represent hydrogen, alkyl group, aryl group, or alkylaryl group. Another aspect of the presented invention is a method of preparing deposition solutions. Still another aspect of the present invention is a method of fabricating electronic devices.

Abstract translation: 本发明的一个方面是沉积金属和金属合金的沉积溶液，例如用于制造电子器件。 根据一个实施方案，沉积溶液包含金属离子和pH调节剂。 pH调节剂包含具有通式（R 1 R 2 N）（R 3 R 4 4）n的官能团， N）C = N-R 5其中：N是氮; C是碳; 和R-1，R 2，R 3，R 4和R 5， 亚烷基是相同或不同的并且代表氢，烷基，芳基或烷芳基。 本发明的另一方面是制备沉积溶液的方法。 本发明的又一方面是一种制造电子设备的方法。

公开(公告)号：WO2009120727A3

公开(公告)日：2009-11-19

申请号：PCT/US2009038149

申请日：2009-03-24

Applicant: LAM RES CORP ,  KOLICS ARTUR ,  LI NANHAI

Inventor： KOLICS ARTUR ,  LI NANHAI

IPC: H01L21/306

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/04 ,  C11D3/042 ,  C11D3/2086 ,  C23C16/0227 ,  H01L21/02041 ,  H01L21/02074 ,  H01L21/7684 ,  H01L21/76883

Abstract: This invention pertains to fabrication of devices. One embodiment is a method of substrate cleaning and electroless deposition of a cap layer for an integrated circuit. The method is performed on a substrate having a surface comprising a metal and dielectric damascene metallization layer. The method comprises exposing the surface of the substrate to a cleaning solution sufficient to clean the surface of the substrate and exposing the surface of the substrate to an electroless deposition solution sufficient to deposit the cap layer. Other embodiments of the present invention include solutions to clean the substrate and solutions to accomplish electroless deposition.

Abstract translation: 本发明涉及器件的制造。 一个实施例是用于集成电路的基底清洁和化学沉积盖层的方法。 该方法在具有包括金属和电介质镶嵌金属化层的表面的衬底上执行。 该方法包括将衬底表面暴露于足以清洁衬底表面并将衬底表面暴露于足以沉积帽层的无电沉积溶液的清洁溶液。 本发明的其他实施例包括清洁基板和溶液以实现无电沉积的解决方案。

公开(公告)号：WO2009120727A2

公开(公告)日：2009-10-01

申请号：PCT/US2009/038149

申请日：2009-03-24

Applicant: LAM RESEARCH CORPORATION ,  KOLICS, Artur ,  LI, Nanhai

Inventor： KOLICS, Artur ,  LI, Nanhai

IPC: H01L21/306

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/04 ,  C11D3/042 ,  C11D3/2086 ,  C23C16/0227 ,  H01L21/02041 ,  H01L21/02074 ,  H01L21/7684 ,  H01L21/76883

Abstract: This invention pertains to fabrication of devices. One embodiment is a method of substrate cleaning and electroless deposition of a cap layer for an integrated circuit. The method is performed on a substrate having a surface comprising a metal and dielectric damascene metallization layer. The method comprises exposing the surface of the substrate to a cleaning solution sufficient to clean the surface of the substrate and exposing the surface of the substrate to an electroless deposition solution sufficient to deposit the cap layer. Other embodiments of the present invention include solutions to clean the substrate and solutions to accomplish electroless deposition.

Abstract translation: 本发明涉及装置的制造。 一个实施例是用于集成电路的盖层的基板清洁和无电沉积的方法。 该方法在具有包括金属和电介质镶嵌金属化层的表面的基板上进行。 该方法包括将衬底的表面暴露于足以清洁衬底表面并将衬底的表面暴露于足以沉积覆盖层的无电沉积溶液的清洁溶液中。 本发明的其它实施例包括清洁基底和解决方案以完成无电沉积的方法。