公开(公告)号：WO2011159401A1

公开(公告)日：2011-12-22

申请号：PCT/US2011/034987

申请日：2011-05-03

Applicant: INVISAGE TECHNOLOGIES, INC. ,  MALONE, Michael R. ,  DELLA NAVE, Pierre Henri Rene ,  BRADING, Michael C. ,  LEE, Jess Jan Young ,  TIAN, Hui ,  IVANOV, Igor C. ,  SARGENT, Edward H.

Inventor： MALONE, Michael R. ,  DELLA NAVE, Pierre Henri Rene ,  BRADING, Michael C. ,  LEE, Jess Jan Young ,  TIAN, Hui ,  IVANOV, Igor C. ,  SARGENT, Edward H.

IPC: G03B3/00

CPC classification number: H04N5/2258 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/23232 ,  H04N5/23296 ,  H04N5/37452 ,  H04N5/378

Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array with a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array.

Abstract translation: 在各种示例性实施例中，提供了一种成像系统和方法。 在一个实施例中，该系统包括具有第一光学系统的第一图像传感器阵列，以投射第一图像传感器阵列上的第一图像，第一光学系统具有第一缩放级别。 第二光学系统是在第二图像传感器阵列上投影第二图像，第二光学系统具有第二缩放水平。 第二图像传感器阵列和第二光学系统指向与第一图像传感器阵列和第一光学系统相同的方向。 第二缩放级别大于第一缩放级别，使得投影到第二图像传感器阵列上的第二图像放大在投影在第一图像传感器阵列上的第一图像的一部分上。

公开(公告)号：WO2004114386B1

公开(公告)日：2005-09-15

申请号：PCT/US2004019349

申请日：2004-06-16

Applicant: BLUE29 CORP ,  IVANOV IGOR C ,  ZHANG WEIGUO ,  KOLICS ARTUR

Inventor： IVANOV IGOR C ,  ZHANG WEIGUO ,  KOLICS ARTUR

IPC: H01L21/288 ,  H01L21/768

CPC classification number: H01L21/288 ,  H01L21/768

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, methods are provide which include loading a topography into a chamber and supplying fluids to an enclosed area about the topography. In particular, a method is provided for forming a hydrated metal oxide layer. In addition, a method is provided for selectively depositing a dielectric layer and a metal layer upon a topography. A topography having a single layer with at least four elements lining a lower surface and sidewalls of a metal feature is also provided. A process chamber which includes a gate configured to either seal or provide an air passage to the chamber and a substrate holder comprising a clamping jaw with a lever are contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided.

Abstract translation: 提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。 通常，提供方法，其包括将地形装载到室中并将流体供应到关于地形的封闭区域。 特别地，提供了形成水合金属氧化物层的方法。 此外，提供了一种用于在形貌上选择性地沉积电介质层和金属层的方法。 还提供了具有单层的形状，其具有衬在下表面和金属特征的侧壁的至少四个元件。 一种处理室，其包括构造成密封或提供​​到腔室的空气通道的门，以及包括具有杠杆的夹爪的衬底保持器。 还提供了具有布置在基板保持器上方的储存器的处理室。

公开(公告)号：WO2004077512A3

公开(公告)日：2004-09-10

申请号：PCT/US2004/005214

申请日：2004-02-23

Applicant: BLUE29 CORPORATION ,  IVANOV, Igor, C. ,  ZHANG, Jonathan, Weiguo

Inventor： IVANOV, Igor, C. ,  ZHANG, Jonathan, Weiguo

IPC: B23B31/14

Abstract: A universal substrate holder of the invention for treating wafer substrates in liquids is provided with a shaft and a rod slidingly inserted into the central opening of the shaft. The end of the shaft that protrudes into the bowl supports a base platform for the substrate, while the end of the rod that protrudes into the bowl has radial arms that rigidly support an annular plate with pins that can pass through the opening of the base platform so that they can support the substrate above the surface of the platform. The annular plate supports clamping jaws made in the form of two-arm levers with shorter arms and longer arms. The longer arms are heavier and therefore in the stationary state of the holder keep the jaws turned into an open position. When the shaft begins to rotate, the jaws are turned under the effect of centrifugal forces into positions of clamping the substrate with the shorter arms. When the rod is pulled down, the ends of the longer arms come into contact with the base platform and are turned into the clamping position. The substrate holder of the invention allows clamping and releasing of the substrate in positions of the substrate above the platform and in a position of the substrate on the base substrate, when the backside of the substrate is inaccessible to the process liquid.

公开(公告)号：WO2006020565B1

公开(公告)日：2006-08-03

申请号：PCT/US2005028119

申请日：2005-08-09

Applicant: BLUE29 LLC ,  IVANOV IGOR C

Inventor： IVANOV IGOR C

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76877 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

公开(公告)号：WO2006020566B1

公开(公告)日：2006-03-23

申请号：PCT/US2005028120

申请日：2005-08-09

Applicant: BLUE29 LLC ,  IVANOV IGOR C

Inventor： IVANOV IGOR C

IPC: H01L21/288 ,  H01L21/768

CPC classification number: H01L21/76877 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: Methods for forming a barrier layer (28, 30) with periodic concentrations of elements using electroless deposition techniques as well as structures resulting therefrom are provided. In addition, systems and methods affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes are provided. In particular, a method and an apparatus (80) are provided which are configured to dispense a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. Another method and accompanying electroless deposition chamber (130) are configured to introduce a gas into an electroless plating chamber above a plate (136) which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography.

Abstract translation: 提供了使用化学沉积技术形成具有周期浓度元素的阻挡层（28,30）的方法以及由此产生的结构。 此外，还提供了在化学镀处理期间影响分布在微电子拓扑图上的溶液的轮廓的系统和方法。 特别地，提供了一种方法和装置（80），其被配置为在无电镀处理期间的不同时刻，在距离微电子拓扑的中心延伸不同距离的多个位置处分配沉积溶液。 另一种方法和伴随的无电镀沉积室（130）被配置为将气体引入到悬浮在微电子拓扑上方的板（136）上方的无电解镀室中，并将气体分配到在微电子的一个或多个离散部分上方延伸的区域 地形。

公开(公告)号：WO2004077512B1

公开(公告)日：2005-08-04

申请号：PCT/US2004005214

申请日：2004-02-23

Applicant: BLUE29 CORP ,  IVANOV IGOR C ,  ZHANG JONATHAN WEIGUO

Inventor： IVANOV IGOR C ,  ZHANG JONATHAN WEIGUO

IPC: B23B31/14 ,  B23B31/18 ,  H01L21/00 ,  H01L21/687

CPC classification number: H01L21/67126 ,  B23B31/14 ,  B23B31/18 ,  H01L21/68707 ,  H01L21/68728 ,  Y10T279/18 ,  Y10T279/24 ,  Y10T279/247

Abstract: A universal substrate holder of the invention for treating wafer substrates in liquids is provided with a shaft and a rod slidingly inserted into the central opening of the shaft. The end of the shaft that protrudes into the bowl supports a base platform for the substrate, while the end of the rod that protrudes into the bowl has radial arms that rigidly support an annular plate with pins that can pass through the opening of the base platform so that they can support the substrate above the surface of the platform. The annular plate supports clamping jaws made in the form of two-arm levers with shorter arms and longer arms. The longer arms are heavier and therefore in the stationary state of the holder keep the jaws turned into an open position. When the shaft begins to rotate, the jaws are turned under the effect of centrifugal forces into positions of clamping the substrate with the shorter arms. When the rod is pulled down, the ends of the longer arms come into contact with the base platform and are turned into the clamping position. The substrate holder of the invention allows clamping and releasing of the substrate in positions of the substrate above the platform and in a position of the substrate on the base substrate, when the backside of the substrate is inaccessible to the process liquid.

Abstract translation: 用于在液体中处理晶片基底的本发明的通用基底保持器设有轴和可滑动地插入轴的中心开口中的杆。 突出到碗中的轴的端部支撑用于基底的基部平台，而突出到碗中的杆的端部具有径向臂，所述径向臂利用可以穿过基部平台的开口的销刚性地支撑环形板 以便它们可以将平台支撑在平台表面上方。 环形板支撑具有较短臂和较长臂的双臂杠杆形式的夹爪。 较长的臂较重，因此在保持器的静止状态下保持钳口转入打开位置。 当轴开始旋转时，夹爪在离心力的作用下转动到用较短的臂夹紧基板的位置。 当杆被拉下时，较长臂的端部与底座平台接触并转入夹紧位置。 当基板的背面不能接近处理液体时，本发明的基板支架允许在基板上方的基板位置和基板位于基板基板上的位置处夹持和释放基板。

公开(公告)号：WO2004099466A3

公开(公告)日：2005-02-24

申请号：PCT/US2004013944

申请日：2004-05-05

Applicant: BLUE29 CORP ,  KOLICS ARTUR ,  PETROV NICOLAI ,  TING CHIU ,  IVANOV IGOR C

Inventor： KOLICS ARTUR ,  PETROV NICOLAI ,  TING CHIU ,  IVANOV IGOR C

IPC: C23C18/16 ,  C23C18/18 ,  C23C18/34 ,  C23C18/50 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76849 ,  C23C18/1608 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76874

Abstract: The method for selective deposition of Co-W-P system films onto copper with palladium-free activation consists of creating hydrogen-rich complexes on the metal surface prior to deposition. More specifically, the method consists of creating the aforementioned complexes on the copper surfaces prior to electroless deposition of a Co-W-P system films. This is achieved by contacting the copper surface with reducing agents for a short period of time and under an elevated temperature. Such reducing agents comprise a hypophosphorous-acid-based or borane-based reducing agents such as dimethylamine borane. Hypophosphorous acid is preferred since it is more compatible with the electroless deposition solution.

Abstract translation: Co-W-P系膜在铜上选择性沉积无钯活化的方法包括在沉积前在金属表面上产生富含氢的配合物。 更具体地，该方法包括在Co-W-P系膜的无电沉积之前在铜表面上产生上述配合物。 这是通过使铜表面与还原剂在短时间内和在高温下接触而实现的。 这种还原剂包括次磷酸或基于硼烷的还原剂如二甲胺硼烷。 次磷酸是优选的，因为它与无电解沉积溶液更相容。

公开(公告)号：WO2011116268A1

公开(公告)日：2011-09-22

申请号：PCT/US2011/028962

申请日：2011-03-18

Applicant: INVISAGE TECHNOLOGIES, INC. ,  TIAN, Hui ,  IVANOV, Igor C. ,  SARGENT, Edward H.

Inventor： TIAN, Hui ,  IVANOV, Igor C. ,  SARGENT, Edward H.

IPC: H01L27/00

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14636 ,  H04N9/045

Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.

Abstract translation: 在各种示例性实施例中，本发明主题是图像传感器和形成图像传感器的方法。 在一个实施例中，图像传感器包括半导体衬底和多个像素区域。 每个像素区域包括在基底上的光敏材料，光敏材料定位成接收光。 每个像素区域的像素电路也包括在传感器中。 每个像素电路包括形成在半导体衬底上的电荷存储器和读出电路。 非金属接触区域位于电荷存储器和相应像素区域的光敏材料之间，电荷存储器通过非金属接触区域与相应像素区域的光敏材料电连通。

公开(公告)号：WO2006020565A3

公开(公告)日：2006-02-23

申请号：PCT/US2005/028119

申请日：2005-08-09

Applicant: BLUE29, LLC ,  IVANOV, Igor, C.

Inventor： IVANOV, Igor, C.

IPC: H01L21/768 ,  H01L21/311

Abstract: A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

公开(公告)号：WO2006020565A2

公开(公告)日：2006-02-23

申请号：PCT/US2005028119

申请日：2005-08-09

Applicant: BLUE29 LLC ,  IVANOV IGOR C

Inventor： IVANOV IGOR C

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76877 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

Abstract translation: 微电子拓扑结构包括具有高于相邻体金属特征（BMF）的表面的介电层（DL），并且还包括在BMF上的延伸高于DL的阻挡层（BL）。 另一微电子拓扑包括具有金属元素浓度的金属氧化物层的BL，其相对于在金属氧化物层的任一侧上的金属合金层内的元素的浓度是不成比例的。 一种方法包括在BMF上形成BL，使得与BMF相邻的第一DL的部分被暴露，在BL上选择性地沉积第二DL，然后清洁其形貌，以及在清洁的形貌上覆盖沉积第三DL。 另一种方法包括抛光微电子拓扑，使得金属化层与DL共面，并且还包括在抛光的形貌上喷射去离子水基流体以从DL去除碎屑。