CYLINDRICAL MAGNETIC LEVITATION STAGE AND LITHOGRAPHY
    1.
    发明申请
    CYLINDRICAL MAGNETIC LEVITATION STAGE AND LITHOGRAPHY 审中-公开
    圆柱磁浮动阶段和平移

    公开(公告)号:WO2011074775A3

    公开(公告)日:2011-10-20

    申请号:PCT/KR2010007464

    申请日:2010-10-28

    Abstract: The present invention provides a cylindrical magnetic levitation stage and an exposure apparatus, which can form a nanoscale pattern of a large area directly on the surface of a large cylinder. The present invention provides an exposure apparatus including a new type of cylindrical magnetic levitation stage, which can levitate, rotate, and move a cylinder in the axial direction by the principle of magnetic levitation in a non-contact manner and form a nanoscale pattern on the surface of the cylinder, and a light source for irradiating light on the surface of the cylinder, thereby reducing the position error of the cylindrical magnetic levitation stage to a nanoscale size and correcting the error caused by mechanical processing in real time. Moreover, the present invention provides an exposure apparatus, which includes a differential vacuum means combined with the cylindrical magnetic levitation stage to create a partial vacuum environment between the light source and the surface of the cylinder, and thus it is possible to employ light sources such as X-rays, electron beams, extreme ultraviolet (EUV) rays, etc.

    Abstract translation: 本发明提供一种圆柱形磁悬浮台和曝光装置,其可以直接在大圆柱体的表面上形成大面积的纳米级图案。 本发明提供了一种曝光装置,它包括一种新型的圆柱形磁悬浮台,可以通过非接触方式的磁悬浮原理在圆柱体上轴向悬浮,旋转和移动圆柱体,并形成纳米尺度图案 圆筒的表面和用于在圆筒表面上照射光的光源,从而将圆柱形磁悬浮台的位置误差降低到纳米尺寸,并且实时校正由机械加工引起的误差。 此外,本发明提供一种曝光装置,其包括与圆柱形磁悬浮台结合的差分真空装置,以在光源和圆筒的表面之间产生局部真空环境,因此可以采用光源 作为X射线,电子束,极紫外(EUV)射线等

    PHOTONIC CRYSTAL DIODE RESONATOR FOR MODULATED ELECTRIC FIELD EMISSION AND ELECTROMAGNETIC WAVE OSCILLATION
    2.
    发明申请
    PHOTONIC CRYSTAL DIODE RESONATOR FOR MODULATED ELECTRIC FIELD EMISSION AND ELECTROMAGNETIC WAVE OSCILLATION 审中-公开
    用于调制电场发射和电磁波振荡的光子晶体二极管谐振器

    公开(公告)号:WO2010062085A2

    公开(公告)日:2010-06-03

    申请号:PCT/KR2009006877

    申请日:2009-11-23

    CPC classification number: H01J21/04

    Abstract: The present invention relates to a photonic crystal diode resonator for modulated electric field emission and electromagnetic wave oscillation; the photonic crystal resonator according to one aspect of the present invention comprises a structure wherein a plurality of dielectric rods including point defects and line defects are combined between a first metal substrate and a second metal substrate, and an electron emission source (cold anode) of a certain size is formed on said point defect location of said first metal plate.

    Abstract translation: 本发明涉及用于调制电场发射和电磁波振荡的光子晶体二极管谐振器; 根据本发明的一个方面的光子晶体谐振器包括这样一种结构,其中包括点缺陷和线缺陷的多个介质棒被结合在第一金属衬底和第二金属衬底之间,并且电子发射源(冷阳极) 在所述第一金属板的所述点缺陷位置上形成一定尺寸。

    PHOTONIC CRYSTAL DEVICE PRODUCED BY A WET PROCESS, AND A PRODUCTION METHOD THEREOF
    4.
    发明申请
    PHOTONIC CRYSTAL DEVICE PRODUCED BY A WET PROCESS, AND A PRODUCTION METHOD THEREOF 审中-公开
    由湿法生产的光子晶体装置及其生产方法

    公开(公告)号:WO2010011036A3

    公开(公告)日:2010-04-15

    申请号:PCT/KR2009003703

    申请日:2009-07-07

    CPC classification number: G02B6/1225 B82Y20/00 G02B6/13

    Abstract: The present invention relates to a method for producing a photonic crystal device having a photonic crystal structure which can be used in photonic crystal devices such as optical waveguides, resonators, filters, antennas and Smith-Purcell free electron lasers which can be employed in a desired electromagnetic waveband by application of semiconductor processing technology and of an anisotropic wet process which uses the crystallization direction (100) of a silicon wafer; for producing a photonic crystal device which comprises a photonic crystal part having a periodic array of silicon crystals having a predetermined form and a covering part for reducing optical losses in the axial direction to be used as an optical waveguide or a resonator, thereby to be capable of being applied in a desired electromagnetic band; and which can have the conductive photonic-crystal characteristics by not coating the silicon crystal with an electrically conductive material and the metal photonic-crystal characteristics by coating the silicon crystal with an electrically conductive material. This production method makes it possible to mass-produce photonic crystal structures of relatively low cost and substantial height within a short time.

    Abstract translation: 本发明涉及一种用于制造具有光子晶体结构的光子晶体器件的方法,该光子晶体结构可以用于光子晶体器件,例如光波导,谐振器,滤波器,天线和Smith-Purcell自由电子激光器,其可以用于期望的 通过应用半导体处理技术的电磁波段以及使用硅晶片的结晶方向(100)的各向异性湿法工艺; 用于制造光子晶体器件,该光子晶体器件包括具有预定形状的具有周期性的硅晶体阵列的光子晶体部分和用于降低沿轴向的光学损耗以用作光波导或谐振器的覆盖部分,从而能够 应用于所需的电磁波段; 并且通过不用导电材料涂覆硅晶体而具有导电光子晶体特性,并且通过用导电材料涂覆硅晶体而具有金属光子晶体特性。 该制造方法能够在短时间内批量生产成本相对较低且高度相当高的光子晶体结构。

    PLASMA IMMERSION ION MILLING APPARATUS AND METHOD
    5.
    发明申请
    PLASMA IMMERSION ION MILLING APPARATUS AND METHOD 审中-公开
    等离子体浸没式离子铣削设备和方法

    公开(公告)号:WO2011065669A3

    公开(公告)日:2011-07-21

    申请号:PCT/KR2010007418

    申请日:2010-10-27

    CPC classification number: H01J37/08 C23C14/48 H01J37/305 H01J37/32009

    Abstract: Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer. This method includes plasma cleaning, surface activating, surface smoothing, dry etching, deposition, plasma immersion ion implantation and deposition within a single or multi chamber.

    Abstract translation: 公开了一种用于使用加速离子对各种工件进行低温等离子体浸没处理的设备和方法,其中低温等离子体分布在放置在腔室中的圆柱形工件周围,工件被包围有包括多槽 提取电极以将工件与等离子体隔离,并且将足以引起溅射的负电位施加到工件和电极,使得来自等离子体的离子在提取电极和等离子体之间形成的鞘内加速,穿过 电极并轰击工件,从而抛光工件表面。 该装置和方法对于大面积的圆柱形衬底(特别是用于微米或纳米图案转移的衬底)的表面平滑是有效的。 该方法包括等离子体清洁,表面活化,表面平滑,干法蚀刻,沉积,等离子体浸没离子注入和单室或多室内的沉积。

    DIRECT CURRENT UNINTERRUPTIBLE POWER SUPPLY DEVICE HAVING SERIAL COMPENSATION RECTIFIER
    6.
    发明申请
    DIRECT CURRENT UNINTERRUPTIBLE POWER SUPPLY DEVICE HAVING SERIAL COMPENSATION RECTIFIER 审中-公开
    直流不间断电源装置具有串行补偿整流器

    公开(公告)号:WO2010126220A3

    公开(公告)日:2010-12-23

    申请号:PCT/KR2010000316

    申请日:2010-01-18

    CPC classification number: H02J9/061 H02J3/1814 H02M2001/0093 Y02E40/18

    Abstract: The serial compensation rectifier, according to one aspect of the present invention, comprises: a compensation type power transformer connected to a single or multiple phase alternating-current power supply; a rectifier unit that rectifies a voltage, including said single or multiple phase alternating current voltage, transmitted via a first winding wire of said compensation type power transformer; a serial compensation inverter unit connected to a second winding wire of said compensation type power transformer; and a direct current capacitor connected to an output port of said serial compensation inverter unit. Output ports of said direct current capacitor and said rectifier unit are wired directly or via a direct current convertor, and said serial compensation inverter unit controls the power factor and the electric power of the input voltage of said alternating-current power transmitted via said compensation type power transformer, and said rectification unit enables the control of the rectified voltage.

    Abstract translation: 根据本发明的一个方面,串联补偿整流器包括:连接到单相或多相交流电源的补偿型电力变压器; 整流器单元,所述整流器单元对经由所述补偿型电力变压器的第一绕组线传输的包括所述单相或多相交流电压的电压进行整流; 串联补偿逆变器单元,连接到所述补偿型电力变压器的第二绕组线; 以及连接到所述串联补偿逆变器单元的输出端口的直流电容器。 所述直流电容器和所述整流器单元的输出端口直接或通过直流转换器连线,并且所述串联补偿逆变器单元控制经由所述补偿类型传输的所述交流电力的输入电压的功率因数和电功率 电力变压器,并且所述整流单元能够控制整流电压。

    RESONATOR STRUCTURE WHICH FORMS DEFLECTED ELECTROMAGNETIC WAVES FOR AMPLIFYING A PULSE ELECTRON BEAM BY USING A SECONDARY ELECTRON
    7.
    发明申请
    RESONATOR STRUCTURE WHICH FORMS DEFLECTED ELECTROMAGNETIC WAVES FOR AMPLIFYING A PULSE ELECTRON BEAM BY USING A SECONDARY ELECTRON 审中-公开
    利用二次电子形成用于放大脉冲电子束的偏转电磁波的谐振器结构

    公开(公告)号:WO2010058906A3

    公开(公告)日:2010-07-29

    申请号:PCT/KR2009005745

    申请日:2009-10-08

    CPC classification number: H01J43/02 H01J23/20

    Abstract: The present invention relates to a resonator structure in which an alternating current (AC) voltage is additionally applied between two metallic surfaces where a constant direct current (DC) voltage is applied to allow either of the two metallic surfaces to generate a pulse electron beam in a stable manner through an electron amplification caused by a secondary electron. The present invention also relates to a photonic crystal resonator in which a direct current (DC) voltage, a pulse signal, or the like are additionally applied via an external power source to the 2-dimensional photonic crystal resonator where electromagnetic waves are coupled to generate a pulse electron beam through a secondary electron amplification, thereby forming deflected electromagnetic waves (AC signals) of several GHz frequency or higher between two metal plates constituting the resonator.

    Abstract translation: 本发明涉及一种谐振器结构,其中在施加恒定直流(DC)电压的两个金属表面之间另外施加交流电(AC)电压,以允许两个金属表面中的任一个在其中产生脉冲电子束 通过二次电子引起的电子放大稳定的方式。 本发明还涉及一种光子晶体谐振器,其中经由外部电源将直流(DC)电压,脉冲信号等附加地施加到二维光子晶体谐振器,其中电磁波被耦合以产生 脉冲电子束通过二次电子放大,由此在构成谐振器的两个金属板之间形成几GHz或更高频率的偏转电磁波(AC信号)。

    METHOD AND CHAMBER FOR INDUCTIVELY COUPLED PLASMA PROCESSING FOR CYLINDERICAL MATERIAL WITH THREE-DIMENSIONAL SURFACE
    8.
    发明申请
    METHOD AND CHAMBER FOR INDUCTIVELY COUPLED PLASMA PROCESSING FOR CYLINDERICAL MATERIAL WITH THREE-DIMENSIONAL SURFACE 审中-公开
    具有三维表面的圆柱体材料的电感耦合等离子体处理方法和室

    公开(公告)号:WO2010008116A2

    公开(公告)日:2010-01-21

    申请号:PCT/KR2008005734

    申请日:2008-09-29

    Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.

    Abstract translation: 本发明涉及用于具有三维轮廓的圆柱形工件的感应耦合等离子体处理室和方法,并且更具体地涉及用于具有三维轮廓的圆柱形工件的感应耦合等离子体处理反应器和方法,其中, 用作内部RF天线的工件通过一端的阻抗匹配网络与另一端的端接电容器连接到RF电源,以实现低等离子体污染,将致密均匀的等离子体限制在衬底附近并且抑制二次电子 从衬底发射,并且等离子体工艺可以应用于3-D线性半导体器件,具有平面或3-D结构化微米或纳米图案的金属,玻璃,陶瓷或聚合物衬底等。

Patent Agency Ranking