公开(公告)号：WO2012170345A1

公开(公告)日：2012-12-13

申请号：PCT/US2012/040725

申请日：2012-06-04

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  MURPHY, Paul, J. ,  DICKERSON, Gary, E.

Inventor： MURPHY, Paul, J. ,  DICKERSON, Gary, E.

IPC: H02H9/02 ,  H02H9/04

CPC classification number: H02H7/001 ,  H02H9/023 ,  Y02E40/68 ,  Y02E40/69

Abstract: A superconducting fault current limiter recovery system includes a superconducting fault current limiter, a shunt electrically coupled in parallel with the superconducting fault current limiter, and a bypass path also electrically coupled in parallel with the superconducting fault current limiter. The bypass path enables a load current to flow through the bypass path during a bypass condition. Thus, load current may be quickly reestablished to serve loads after a fault condition via the bypass path while a superconductor of the superconductor fault current limiter has time to return to a superconducting state after the fault condition.

Abstract translation: 超导故障限流器恢复系统包括超导故障限流器，与超导故障限流器并联电耦合的分流器，以及还与超导故障限流器并联电路的旁路路径。 旁路路径使得负载电流在旁路条件期间流过旁路路径。 因此，负载电流可以快速重新建立，以在经过旁通路径的故障状态之后为负载供电，而超导体故障限流器的超导体在故障状态之后有时间返回到超导状态。

公开(公告)号：WO2009114569A3

公开(公告)日：2009-11-12

申请号：PCT/US2009036722

申请日：2009-03-11

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  BLAKE JULIAN G ,  MURPHY PAUL J

Inventor： BLAKE JULIAN G ,  MURPHY PAUL J

IPC: H01L21/265

CPC classification number: H01L21/76254 ,  H01J2237/2001 ,  H01J2237/31701

Abstract: A substrate is implanted with a species to form a layer of microbubbles in the substrate. The species may be hydrogen or helium in some embodiments. The size at which the microbubbles are stable within the substrate is controlled. In one example, this is by cooling the substrate. In one embodiment, the substrate is cooled to approximately between -15OoC and 3OoC. This cooling also may reduce diffusion of the species in the substrate and will reduce surface roughness when the substrate is cleaved along the layer of microbubbles.

Abstract translation: 衬底被植入物质以在衬底中形成微泡层。 在一些实施例中，物质可以是氢气或氦气。 控制衬底内微泡稳定的尺寸。 在一个例子中，这是通过冷却衬底。 在一个实施例中，衬底被冷却到约-15℃和30℃之间。 这种冷却还可以减少物质在衬底中的扩散并且将在衬底沿着微泡层裂开时降低表面粗糙度。

公开(公告)号：WO2009114569A2

公开(公告)日：2009-09-17

申请号：PCT/US2009/036722

申请日：2009-03-11

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  BLAKE, Julian, G. ,  MURPHY, Paul, J.

Inventor： BLAKE, Julian, G. ,  MURPHY, Paul, J.

IPC: H01L21/265

CPC classification number: H01L21/76254 ,  H01J2237/2001 ,  H01J2237/31701

Abstract: A substrate is implanted with a species to form a layer of microbubbles in the substrate. The species may be hydrogen or helium in some embodiments. The size at which the microbubbles are stable within the substrate is controlled. In one example, this is by cooling the substrate. In one embodiment, the substrate is cooled to approximately between -15O o C and 3O o C. This cooling also may reduce diffusion of the species in the substrate and will reduce surface roughness when the substrate is cleaved along the layer of microbubbles.

Abstract translation: 植入衬底以在衬底中形成微泡层。 在一些实施方案中，该物质可以是氢或氦。 微泡在基底内稳定的尺寸受到控制。 在一个实例中，这是通过冷却衬底。 在一个实施方案中，将基底冷却至约-15℃至30℃。 这种冷却还可以减少物质在基底中的扩散，并且当底物沿着微泡层被切割时，会降低表面粗糙度。

公开(公告)号：WO2010151583A2

公开(公告)日：2010-12-29

申请号：PCT/US2010039646

申请日：2010-06-23

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  TEKLETSADIK KASEGN D ,  FISH ROGER B ,  MURPHY PAUL J

Inventor： TEKLETSADIK KASEGN D ,  FISH ROGER B ,  MURPHY PAUL J

IPC: H02H9/02

CPC classification number: H02H9/023 ,  H01F6/00 ,  H01F6/06 ,  H01F27/02 ,  H01F27/06 ,  H01L39/16 ,  Y02E40/69

Abstract: A new type of superconducting fault current limiter is disclosed, which can advantageously be used with high voltage transmission networks. The circuit is electrically connected to two terminals, which connect to the transmission network. The superconducting circuit is located within an enclosure or tank, which is electrically isolated from ground. Therefore, the voltage difference between the enclosure and the superconducting circuit, and between the enclosure and the terminals are significantly less than exist in current deployments. In some embodiments, the enclosure is electrically connected to one of the terminals, while in other embodiments, the enclosure is electrically isolated from the terminals. The circuit can be combined with other like circuits to address a wide range of current transmission network configurations.

Abstract translation: 公开了一种新型的超导故障限流器，其可以有利地与高压传输网络一起使用。 电路电连接到两个连接到传输网络的终端。 超导电路位于与地面电隔离的外壳或槽内。 因此，外壳和超导电路之间以及外壳和端子之间的电压差显着小于当前部署中存在的电压差。 在一些实施例中，外壳电连接到端子之一，而在其它实施例中，外壳与端子电隔离。 电路可以与其他类似的电路组合以解决当前传输网络配置的广泛范围。

公开(公告)号：WO2010048161A2

公开(公告)日：2010-04-29

申请号：PCT/US2009061298

申请日：2009-10-20

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  MURAKAWA SHIGEMI ,  SINGH VIKRAM ,  PAPASOULIOTIS GEORGE D ,  OLSON JOSEPH C ,  MURPHY PAUL J ,  DICKERSON GARY E

Inventor： MURAKAWA SHIGEMI ,  SINGH VIKRAM ,  PAPASOULIOTIS GEORGE D ,  OLSON JOSEPH C ,  MURPHY PAUL J ,  DICKERSON GARY E

IPC: H01L21/205

CPC classification number: C23C16/45544

Abstract: Techniques for atomic layer deposition (ALD) are disclosed, in one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.

Abstract translation: 公开了用于原子层沉积（ALD）的技术。在一个特定的示例性实施例中，所述技术可以实现为用于ALD的系统，其包括处于堆叠构造的多个反应器，其中每个反应器包括用于保持目标晶片的晶片保持部分 ，气体组件，所述气体组件耦合到所述多个反应器并且被配置为向所述多个反应器中的至少一个提供至少一种气体，以及排气组件，其耦合到所述多个反应器并且被配置为从所述反应器中排出所述至少一种气体 多个反应器中的至少一个。 气体组件还可以包括阀组件，该阀组件耦合到第一气体入口，第二气体入口和第三气体入口中的每一个，其中阀组件构造成选择性地释放第一气体，第二气体， 和第三个气体。

公开(公告)号：WO2009111669A3

公开(公告)日：2009-12-17

申请号：PCT/US2009036239

申请日：2009-03-05

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  GUPTA ATUL ,  BATEMAN NICHOLAS P T ,  MURPHY PAUL J ,  RENAU ANTHONY ,  CARLSON CHARLES

Inventor： GUPTA ATUL ,  BATEMAN NICHOLAS P T ,  MURPHY PAUL J ,  RENAU ANTHONY ,  CARLSON CHARLES

IPC: H01L31/042 ,  H01L21/265

CPC classification number: H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A improved, lower cost method of producing solar cells utilizing selective emitter design is disclosed. The contact regions are created on the substrate without the use of lithography or masks. The method utilizes ion implantation technology, and the relatively low accuracy requirements of the contact regions to reduce the process steps needed to produce a solar cell. In some embodiments, the current of the ion beam is selectively modified to create the highly doped contact regions. In other embodiments, the ion beam is focused, either through the use of an aperture or via adjustments to the beam line components to create the necessary doping profile. In still other embodiments, the wafer scan rate is modified to create the desired ion implantation pattern.

Abstract translation: 公开了一种利用选择性发射极设计来生产太阳能电池的改进的低成本方法。 不使用光刻或掩模就可以在衬底上形成接触区域。 该方法利用离子注入技术以及接触区域的相对较低的精度要求来减少生产太阳能电池所需的工艺步骤。 在一些实施例中，离子束的电流被选择性地修改以产生高度掺杂的接触区域。 在其他实施例中，离子束通过使用孔径或通过对束线部件的调整来聚焦，以产生必要的掺杂分布。 在其他实施例中，晶片扫描速率被修改以产生期望的离子注入图案。

公开(公告)号：WO2009111665A3

公开(公告)日：2009-11-26

申请号：PCT/US2009036232

申请日：2009-03-05

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  BATEMAN NICHOLAS P T ,  MURPHY PAUL J ,  SULLIVAN PAUL ,  GUPTA ATUL

Inventor： BATEMAN NICHOLAS P T ,  MURPHY PAUL J ,  SULLIVAN PAUL ,  GUPTA ATUL

IPC: H01L21/265 ,  H01L31/042

CPC classification number: H01L31/18 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0827 ,  H01J2237/202 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

Abstract translation: 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外，使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中，连续地植入两种不同的物质而不破坏真空。 在另一个实施例中，植入衬底，然后翻转，使得其可以在退火之前两面植入。 在另一个实施例中，施加一个或多个不同的掩模，并且在不破坏真空条件的情况下执行连续的注入，由此减少处理时间。

公开(公告)号：WO2009111665A2

公开(公告)日：2009-09-11

申请号：PCT/US2009/036232

申请日：2009-03-05

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  BATEMAN, Nicholas, P.t. ,  MURPHY, Paul, J. ,  SULLIVAN, Paul ,  GUPTA, Atul

Inventor： BATEMAN, Nicholas, P.t. ,  MURPHY, Paul, J. ,  SULLIVAN, Paul ,  GUPTA, Atul

IPC: H01L21/266

CPC classification number: H01L31/18 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0827 ,  H01J2237/202 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

Abstract translation: 太阳能电池的制造通过执行连续的离子注入来简化和降低成本，而不需要介入的热循环。 除了减少处理时间外，使用链式离子注入还可以提高太阳能电池的性能。 在另一个实施例中，连续植入两种不同的物质而不破坏真空。 在另一个实施例中，衬底被植入，然后翻转，使得它可以在退火前在两侧上植入并植入。 在又一个实施例中，施加一个或多个不同的掩模并且执行连续的植入而不破坏真空条件，由此减少处理时间。

公开(公告)号：WO2010048161A3

公开(公告)日：2010-04-29

申请号：PCT/US2009/061298

申请日：2009-10-20

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  MURAKAWA, Shigemi ,  SINGH, Vikram ,  PAPASOULIOTIS, George, D. ,  OLSON, Joseph, C. ,  MURPHY, Paul, J. ,  DICKERSON, Gary, E.

Inventor： MURAKAWA, Shigemi ,  SINGH, Vikram ,  PAPASOULIOTIS, George, D. ,  OLSON, Joseph, C. ,  MURPHY, Paul, J. ,  DICKERSON, Gary, E.

IPC: H01L21/205

Abstract: Techniques for atomic layer deposition (ALD) are disclosed, in one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.

公开(公告)号：WO2009111669A2

公开(公告)日：2009-09-11

申请号：PCT/US2009/036239

申请日：2009-03-05

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  GUPTA, Atul ,  BATEMAN, Nicholas, P.T. ,  MURPHY, Paul, J. ,  RENAU, Anthony ,  CARLSON, Charles

Inventor： GUPTA, Atul ,  BATEMAN, Nicholas, P.T. ,  MURPHY, Paul, J. ,  RENAU, Anthony ,  CARLSON, Charles

IPC: H01L21/00

CPC classification number: H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A improved, lower cost method of producing solar cells utilizing selective emitter design is disclosed. The contact regions are created on the substrate without the use of lithography or masks. The method utilizes ion implantation technology, and the relatively low accuracy requirements of the contact regions to reduce the process steps needed to produce a solar cell. In some embodiments, the current of the ion beam is selectively modified to create the highly doped contact regions. In other embodiments, the ion beam is focused, either through the use of an aperture or via adjustments to the beam line components to create the necessary doping profile. In still other embodiments, the wafer scan rate is modified to create the desired ion implantation pattern.

Abstract translation: 公开了一种利用选择性发射极设计制造太阳能电池的成本较低的方法。 在不使用光刻或掩模的情况下，在基板上形成接触区域。 该方法利用离子注入技术，并且接触区域的相对低的精度要求减少了生产太阳能电池所需的工艺步骤。 在一些实施例中，选择性地修改离子束的电流以产生高度掺杂的接触区域。 在其他实施例中，离子束通过使用孔径或通过调整到束线分量来聚焦以产生必要的掺杂分布。 在其他实施例中，晶片扫描速率被修改以产生期望的离子注入图案。