公开(公告)号：WO2011019824A3

公开(公告)日：2011-04-14

申请号：PCT/US2010045180

申请日：2010-08-11

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  MAYNARD HELEN L ,  PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM ,  HATEM CHRISTOPHER R ,  GODET LUDOVIC

Inventor： MAYNARD HELEN L ,  PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM ,  HATEM CHRISTOPHER R ,  GODET LUDOVIC

IPC: H01L21/02

CPC classification number: H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02667 ,  H01L21/2236 ,  H01L31/0725 ,  H01L31/182 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

Abstract: A method of depositing and crystallizing materials on a substrate Is disclosed, in a particular embodiment, the method may include creating a plasma having deposition- misted species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second lime period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved, in another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers.

Abstract translation: 一种在衬底上沉积和结晶材料的方法在具体实施方案中公开了该方法可以包括产生具有沉积物质和能量携带物质的等离子体。 在第一时间段期间，没有偏置电压施加到衬底，并且通过等离子体沉积物质沉积在衬底上。 在第二个石灰周期期间，向基板施加电压，其将离子吸引到沉积的物质中，从而使沉积层结晶。 可以重复该过程，直到达到足够的厚度，在另一个实施方案中，可以改变偏置电压或偏置脉冲持续时间以改变发生的结晶量。 在另一个实施方案中，可以使用掺杂剂来掺杂沉积的层。

公开(公告)号：WO2009111667A2

公开(公告)日：2009-09-11

申请号：PCT/US2009/036236

申请日：2009-03-05

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  BATEMAN, Nicholas, P.T. ,  GUPTA, Atul ,  HATEM, Christopher, R. ,  PAPASOULIOTIS, George, D. ,  MAYNARD, Helen, L.

Inventor： BATEMAN, Nicholas, P.T. ,  GUPTA, Atul ,  HATEM, Christopher, R. ,  PAPASOULIOTIS, George, D. ,  MAYNARD, Helen, L.

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/02168 ,  H01L31/022433 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of controlling the diffusion of a dopant in a solar cell are disclosed. A second species is used in conjunction with the dopant to modify the diffusion region. For example, phosphorus and boron both diffuse by pairing with interstitial silicon atoms. Thus, by controlling the creation and location of these interstitials, the diffusion rate of the dopant can be controlled. In one embodiment, a heavier element, such as germanium, argon or silicon, is used to create interstitials. Because of the presence of these heavier elements, the dopant diffuses deeper into the substrate. In another embodiment, carbon is implanted. Carbon reduces the number of interstitials, and thus can be used to limit the diffusion of the dopant. In another embodiment, a lighter element, such as helium is used to amorphize the substrate. The crystalline-amorphous interface created limits diffusion of the dopant into the substrate.

Abstract translation: 公开了控制太阳能电池中掺杂剂扩散的方法。 第二种物质与掺杂剂一起使用以改变扩散区域。 例如，磷和硼都通过与间质硅原子配对而扩散。 因此，通过控制这些间隙的产生和位置，可以控制掺杂剂的扩散速率。 在一个实施例中，使用诸如锗，氩或硅的较重元件来形成填隙。 由于这些较重元素的存在，掺杂剂更深地扩散到衬底中。 在另一个实施例中，植入碳。 碳减少填隙物的数量，因此可以用来限制掺杂物的扩散。 在另一个实施例中，使用诸如氦的较轻的元件来非晶化衬底。 产生的晶体 - 无定形界面限制了掺杂剂扩散到衬底中。

公开(公告)号：WO2009045736A1

公开(公告)日：2009-04-09

申请号：PCT/US2008/076799

申请日：2008-09-18

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  GODET, Ludovic ,  RADOVANOV, Svetlana ,  PAPASOULIOTIS, George, D. ,  RAJ, Deven, M. ,  SINGH, Vikram ,  MILLER, Timothy, J. ,  FANG, Ziwei

Inventor： GODET, Ludovic ,  RADOVANOV, Svetlana ,  PAPASOULIOTIS, George, D. ,  RAJ, Deven, M. ,  SINGH, Vikram ,  MILLER, Timothy, J. ,  FANG, Ziwei

IPC: H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32706 ,  H01J37/32623 ,  H01J37/32935

Abstract: A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, and a platen configured to support a workpiece in the process chamber. The platen is biased with a pulsed platen signal having pulse ON and OFF time periods to accelerate ions from the plasma towards the workpiece during the pulse ON time periods and not the pulse OFF time periods. A plate is positioned in the process chamber. The plate is biased with a plate signal to accelerate ions from the plasma towards the plate to cause an emission of secondary electrons from the plate during at least a portion of one of the pulse OFF time periods of the pulsed platen signal to at least partially neutralize charge accumulation on the workpiece.

Abstract translation: 等离子体处理设备包括处理室，被配置为在处理室中产生等离子体的源和被配置为在处理室中支撑工件的压板。 压板由具有脉冲ON和OFF时间段的脉冲压板信号偏置，以在脉冲接通时间段期间将离子从等离子体加速到工件，而不是脉冲关闭时间周期。 板位于处理室中。 板被板信号偏置，以将离子从等离子体加速到板，以在脉冲压板信号的脉冲关闭时间周期的至少一部分的至少一部分期间引起来自板的二次电子的发射，以至少部分中和 电荷积累在工件上。

公开(公告)号：WO2008073750A3

公开(公告)日：2009-03-19

申请号：PCT/US2007086288

申请日：2007-12-03

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  SINGH VIKRAM ,  PERSING HAROLD M ,  WINDER EDMUND J ,  RENAU ANTHONY ,  PAPASOULIOTIS GEORGE D

Inventor： SINGH VIKRAM ,  PERSING HAROLD M ,  WINDER EDMUND J ,  RENAU ANTHONY ,  PAPASOULIOTIS GEORGE D

IPC: C23C16/455 ,  H01L21/00

CPC classification number: H01L21/32155 ,  C23C16/22 ,  C23C16/345 ,  C23C16/452 ,  C23C16/4554 ,  H01L21/3141 ,  H01L21/3185

Abstract: A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by a method for forming a strained thin film. The method may comprise supplying a substrate surface with one or more precursor substances having atoms of at least one first species and atoms of at least one second species, thereby forming a layer of the precursor substance on the substrate surface. The method may also comprise exposing the substrate surface to plasma-generated metastable atoms of a third species, wherein the metastable atoms desorb the atoms of the at least one second species from the substrate surface to form an atomic layer of the at least one first species. A desired amount of stress in the atomic layer of the at least one first species may be achieved by controlling one or more parameters in the atomic layer deposition process.

Abstract translation: 公开了一种用于原子层沉积的技术。 在一个特定的示例性实施例中，该技术可以通过用于形成应变薄膜的方法来实现。 该方法可以包括向基材表面提供一种或多种具有至少一种第一种类的原子和至少一种第二种类的原子的前体物质，由此在基材表面上形成前体物质层。 该方法还可以包括将基底表面暴露于等离子体产生的第三种类的亚稳原子，其中亚稳原子从底物表面解吸至少一种第二种类的原子以形成至少一种第一种类的原子层 。 可以通过控制原子层沉积工艺中的一个或多个参数来实现至少一种第一种类的原子层中所需的应力量。

公开(公告)号：WO2012178175A1

公开(公告)日：2012-12-27

申请号：PCT/US2012/044034

申请日：2012-06-25

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  PAPASOULIOTIS, George, D. ,  RAJ, Deven ,  PERSING, Harold

Inventor： PAPASOULIOTIS, George, D. ,  RAJ, Deven ,  PERSING, Harold

IPC: H01J37/32

CPC classification number: H01J37/32412 ,  H01J37/32972

Abstract: A plasma processing apparatus and method are disclosed which improve the repeatability of various plasma processes. The actual implanted dose is a function of implant conditions, as well as various other parameters. This method used knowledge of current implant condition, as well as information about historical data to improve repeatability. In one embodiment, information about plasma composition and dose per pulse is used to control one or more operating parameters in the plasma chamber, in another embodiment, this information is combined with historical data to control one or more operating parameters m the plasma chamber.

Abstract translation: 公开了提高各种等离子体工艺的重复性的等离子体处理装置和方法。 实际的植入剂量是植入条件以及各种其他参数的函数。 该方法使用当前植入条件的知识，以及关于历史数据的信息以改善重复性。 在一个实施例中，关于等离子体组成和每脉冲剂量的信息用于控制等离子体室中的一个或多个操作参数，在另一个实施例中，该信息与历史数据组合以控制等离子体室中的一个或多个操作参数。

公开(公告)号：WO2011047142A2

公开(公告)日：2011-04-21

申请号：PCT/US2010052654

申请日：2010-10-14

Applicant: VARIAM SEMICONDUCTIOR EQUIPMENT ASSOCIATES INC ,  PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM ,  YIN HEYUN ,  MAYNARD HELEN L ,  GODET LUDOVIC

Inventor： PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM ,  YIN HEYUN ,  MAYNARD HELEN L ,  GODET LUDOVIC

IPC: H01L21/265

CPC classification number: H01L21/2236 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/32834 ,  H01L29/66803

Abstract: A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.

Abstract translation: 公开了一种处理具有水平和非水平表面的基板的方法。 使用离子注入机将基片注入颗粒。 在离子注入期间，由于植入工艺的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上较厚。 该膜的存在可能不利地改变基底的性质。 为了纠正这一点，执行第二工艺步骤以去除沉积在水平表面上的膜。 在一些实施例中，使用蚀刻工艺去除该膜。 在一些实施方案中，材料改性步骤用于改变包含膜的材料的组成。 该材料修改步骤可以代替蚀刻工艺，也可以除了蚀刻工艺之外。

公开(公告)号：WO2010115114A2

公开(公告)日：2010-10-07

申请号：PCT/US2010/029799

申请日：2010-04-02

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  GODET, Ludovic ,  MILLER, Timothy, J. ,  PAPASOULIOTIS, George, D. ,  SINGH, Vikram

Inventor： GODET, Ludovic ,  MILLER, Timothy, J. ,  PAPASOULIOTIS, George, D. ,  SINGH, Vikram

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed, in this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

Abstract translation: 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于共形沉积材料的方法，在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角度的范围，可以将各种不同的特征沉积在其上。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

公开(公告)号：WO2010048161A8

公开(公告)日：2010-06-24

申请号：PCT/US2009061298

申请日：2009-10-20

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  MURAKAWA SHIGEMI ,  SINGH VIKRAM ,  PAPASOULIOTIS GEORGE D ,  OLSON JOSEPH C ,  MURPHY PAUL J ,  DICKERSON GARY E

Inventor： MURAKAWA SHIGEMI ,  SINGH VIKRAM ,  PAPASOULIOTIS GEORGE D ,  OLSON JOSEPH C ,  MURPHY PAUL J ,  DICKERSON GARY E

IPC: H01L21/205

CPC classification number: C23C16/45544

Abstract: Techniques for atomic layer deposition (ALD) are disclosed, in one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.

Abstract translation: 在一个具体的示例性实施方案中，公开了用于原子层沉积（ALD）的技术，所述技术可以被实现为包括堆叠配置中的多个反应器的ALD系统，其中每个反应器包括用于保持目标晶片的晶片保持部分 耦合到所述多个反应器并被配置为向所述多个反应器中的至少一个提供至少一个气体的气体组件，以及联接到所述多个反应器的排气组件，并被配置为从所述多个反应器排出所述至少一种气体 多个反应堆中的至少一个。 气体组件还可以包括联接到第一气体入口，第二气体入口和第三气体入口中的每一个的阀组件，其中阀组件构造成选择性地释放第一气体，第二气体， 和第三气体。

公开(公告)号：WO2009102871A3

公开(公告)日：2009-10-15

申请号：PCT/US2009033928

申请日：2009-02-12

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  RAJ DEVEN M ,  GODET LUDOVIC ,  LINDSAY BERNARD G ,  MILLER TIMOTHY J ,  PAPASOULIOTIS GEORGE D

Inventor： RAJ DEVEN M ,  GODET LUDOVIC ,  LINDSAY BERNARD G ,  MILLER TIMOTHY J ,  PAPASOULIOTIS GEORGE D

IPC: H01L21/265

CPC classification number: C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/3299

Abstract: A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.

Abstract translation: 一种使用飞行时间离子检测器来控制等离子体掺杂工艺的方法包括：在靠近支撑衬底的台板的等离子体室中产生包含掺杂剂离子的等离子体。 台板被偏压为具有负电位的偏压电压波形，该偏压电压波形吸引等离子体中的离子到等离子体掺杂的基板。 利用飞行时间离子检测器将等离子体中存在的一系列离子作为离子质量的函数进行测量。 使用法拉第剂量测定系统测量影响基材的总离子数。 从所测量的离子光谱确定植入物轮廓。 根据测量的离子总数和计算的植入物分布确定累积剂量。 响应于所计算的积分剂量，修改至少一个等离子体掺杂参数。

公开(公告)号：WO2012142439A8

公开(公告)日：2014-06-26

申请号：PCT/US2012033562

申请日：2012-04-13

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  PAPASOULIOTIS GEORGE D ,  GODET LUDOVIC

Inventor： PAPASOULIOTIS GEORGE D ,  GODET LUDOVIC

IPC: C23C16/455

CPC classification number: C23C16/45542 ,  C23C16/45551

Abstract: An apparatus for depositing a coating may comprise a first processing chamber configured to deposit a first reactant as a reactant layer on a substrate during a first time period. A second processing chamber may be configured to direct ions incident on the substrate at a second time and configured to deposit a second reactant on the substrate during a second time period, wherein the second reactant is configured to react with the reactant layer.

Abstract translation: 用于沉积涂层的装置可以包括第一处理室，其被配置为在第一时间段期间将作为反应物层的第一反应物沉积在基板上。 第二处理室可以被配置为在第二时间引导入射在衬底上的离子，并且被配置为在第二时间段期间在衬底上沉积第二反应物，其中第二反应物构造成与反应物层反应。