Abstract:
Circuitry for testing a power-on-reset circuit in an integrated circuit includes a high-voltage detector coupled to a first I/O pad of the integrated circuit. A power-on-reset circuit in the integrated circuit has an output coupled to a driver circuit that is powered by the high-voltage. A second I/O pad of the integrated circuit is coupled to the output of the driver circuit. The driver circuit may be enabled by a signal provided on a third I/O pad of the integrated circuit.
Abstract:
An array (200; 202) of memory cells having a predetermined group (301) of storage cells (203; 205; 306) , arranged in a row, also have an arrangement of one or more reference cells (201; 207; 304, 307) fabricated to be adjacent to or proximate to the row of storage cells. The reference cells are written to, erased, or programmed when the storage cells are written to, erased, or programmed. The same number of write, erase, or program cycles and the proximity of the reference cells to the storage cells maintain an operational matching of the storage cells and reference cells.
Abstract:
A multiplexer circuit in a memory organized into page-portions (210, 250) has a plurality of bit- select multiplexers (216, 256) configured to couple a plurality of page-portion global bitlines (214, 254) to a sense amplifier (201) input. A plurality of column address lines organized into data bytes comprises each page-portion. A plurality of column multiplexers (212, 252) couple the data bytes to the page-portion global bitlines (214, 254) such that each of the address lines comprising the data byte is coupled to one of the page-portion global bitlines (214, 254).
Abstract:
Circuitry for testing a power-on-reset circuit in an integrated circuit includes a high-voltage detector coupled to a first I/O pad of the integrated circuit. A power-on-reset circuit in the integrated circuit has an output coupled to a driver circuit that is powered by the high-voltage. A second I/O pad of the integrated circuit is coupled to the output of the driver circuit. The driver circuit may be enabled by a signal provided on a third I/O pad of the integrated circuit.
Abstract:
A method for sensing voltage on an internal node in an integrated circuit includes applying a voltage larger than a threshold value to a first pad, generating from the activation voltage a potential for a sensing circuit and coupled to the internal node, and coupling an output of the sensing circuit to a second pad on the integrated circuit when the activation voltage is present on the first pad. A sensing circuit includes first and second pads, a voltage-sensor circuit having an input coupled to an internal node and a power connection coupled to a sensor power node. A circuit is configured to place a supply potential on the sensor power node when a threshold value is on the first pad. A switch coupled between the sensing circuit and the second pad turns on when the supply potential is on the voltage sensor power node.
Abstract:
In the present invention, viruses, plasmids or both are constructed which contain viral DNA, either at least one head-to-head ITR junction, recombinase recognition sites positioned such that site-specific recombination between recombinase recognition sites in separate plasmids results in generation of infectious viral DNA at high-efficiency in cotransfected host cells that have been engineered to express a site-specific recombinase, or both. Because of the high-efficiency and specificity of the Cre enzyme, the FLP enzyme, or both, suitably engineered plasmids can be readily recombined to produce infectious virus at high-efficiency in cotransfected 293 cells, without, at the same time, producing wild-type adenovirus, with the attendant problems for removal thereof. Use of recombinases besides Cre or FLP, and recombinase recognition sites besides lox or frt sites, and use of cells other than 293 cells are also disclosed and enabled, as are kits incorporating the site-specific vector system, as well as compositions and methods for using such compositions as vaccines or in gene therapeutic applications. Enhancements in the efficiency of both site-specific and homologous recombination are provided by inclusion of at least one head-to-head ITR junction.
Abstract:
A high-voltage charge pump circuit includes a charge pump circuit. First high-voltage output circuit is configured to set an output voltage of the charge pump at a first voltage level selected for regular programming and erasing memory cells. A second high-voltage output circuit is configured to set the output voltage of the charge pump at a second voltage level selected for walkout of device junctions, the second voltage level being higher than the first voltage level. A third high-voltage output circuit is configured to set the output voltage of the charge pump at a third voltage level selected for guardband programming and erasing, the third voltage level being lower than the second voltage level and higher than the first voltage level. Selection circuitry selectively couples one of the first, second, and third high- voltage output circuits to the output of the high-voltage charge pump circuit.
Abstract:
Embodiments disclosed are apparatus comprising a processing circuit having signal and power input ports to couple to a single-wire interface providing electncal communication of both signals and power at a power supply voltage level Also provided Is a charging transistor coupled at a first source/dram terminal to the single-wire interface Further provided is a charge storage device coupled to the second source/drain terminal of the transistor at a connection point and to the power input port of the processing circuit at said connection point There is also a control device having an input coupled to the single-wire interface, a control output coupled to the gate of the transistor, and powered by the charge storage device at the connection point, such that the transistor charges the storage device when the single-wire interface voltage is at a power supply voltage level.
Abstract:
Embodiments of the present invention provide methods, systems, and computer readable media for input output memory management unit (IOMMU) two-layer addressing in the context of memory address translations for I/O devices. According to an embodiment, a method includes translating a guest virtual address (GVA) to a corresponding guest physical address (GPA) using a guest address translation table according to a process address space identifier associated with an address translation transaction associated with an I/O device, and translating the GPA to a corresponding system physical address (SPA) using a system address translation table according to a device identifier associated with the address translation transaction.
Abstract:
A dual-wire communications bus circuit (300), compatible with existing two-wire bus protocols, includes a first and second part of the communications bus circuit to couple to a communications bus (317) The bus has a first line for carrying data signals from a master device (201 ) to one or more slave devices (315A-315H) and a second line to carry a clock signal between the devices A pullup resistor (305, 311 ) is located in each part of the communications bus circuit, the pullup resistor (305) in the first part couples to the first line of the communications bus (317) and the pullup resistor (311) in the second part couples to the second line of the communications bus (317) To improve data throughput and reduce noise, an active pullup device (301A2-301 H2), working in conjunction with the pullup resistor (311 ), is located in each part of the communications bus circuit