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    COMPOUND MONOCRYSTAL MANUFACTURING METHOD AND APPARATUS
    1.
    发明申请
    COMPOUND MONOCRYSTAL MANUFACTURING METHOD AND APPARATUS 审中-公开
    复合单晶制造方法和装置

    公开(公告)号：WO1995033873A1

    公开(公告)日：1995-12-14

    申请号：PCT/JP1995001069

    申请日：1995-06-01

    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO ,  FUJIKAWA, Takao ,  UEHARA, Kazuhiro ,  SAKASHITA, Yoshihiko ,  SUZUKI, Kazuya ,  OKADA, Hiroshi ,  KAWANAKA, Takao ,  OOMOTO, Seiichiro

    Inventor： KABUSHIKI KAISHA KOBE SEIKO SHO

    IPC: C30B11/06

    CPC classification number: C30B11/00 ,  C30B29/48 ,  Y10T117/102

    Abstract: The manufacturing method according to the present invention has the steps of thermally melting a raw material in a raw material storage container (14), which is provided on the inner side of heating means (3a), by these heating means (3a) provided in a furnace casing (1), and then cooling and solidifying a molten liquid (62) of the raw material from the lower side thereof to grow a monocrystal (61), and is characterized in that a non-gas-permeable air-tight chamber (4) surrounding the raw material storage container (14) on the inner side of the heating means (3a) is provided, a uniform pressure passage (10) allowing the interior and exterior of the air-tight chamber (4) to communicate with each other being formed in the portion of the air-tight chamber (4) which is downwardly away from the heating means (3a) to surround the raw material storage container (14) with this air-tight chamber (4), a region of the uniform pressure passage (10) being maintained in a low temperature condition of not higher than a melting point of a high dissociation pressure component of the raw material, whereby the raw material in the container (14) is heated to grow a monocrystal.

    Abstract translation: 根据本发明的制造方法具有如下步骤：通过这些加热装置（3a）设置在加热装置（3a）的内侧的原料储存容器（14）中的原料热熔融 炉壳（1），然后从原料的下侧冷却固化原料的熔融液（62），生长单晶（61），其特征在于，不透气的气密室 （4）围绕加热装置（3a）的内侧的原料储存容器（14）设置有均匀的压力通道（10），其允许气密室（4）的内部和外部与 彼此形成在气密室（4）的向下远离加热装置（3a）的部分中，以与该气密室（4）包围原料储存容器（14），区域 均匀的压力通道（10）保持在低温条件o f不高于原料的高解离压成分的熔点，由此容器（14）中的原料被加热以生长单晶。

    CONNECTING DEVICE FOR STOOL AND DRAINAGE PIPE
    2.
    发明申请
    CONNECTING DEVICE FOR STOOL AND DRAINAGE PIPE 审中-公开
    连接管道和排水管的设备

    公开(公告)号：WO1995027833A1

    公开(公告)日：1995-10-19

    申请号：PCT/JP1995000676

    申请日：1995-04-06

    Applicant: TOTO LTD. ,  KOBAYASHI, Hiroshi ,  WATANABE, Makoto ,  OKADA, Hiroshi ,  TANAKA, Hiroshi ,  KAYAHARA, Toshiaki ,  SUEHIRO, Katsuyuki ,  SOH, Masaya ,  YAMAMOTO, Hideshi ,  OGATA, Kenichi

    Inventor： TOTO LTD.

    IPC: E03D11/16

    CPC classification number: B28B1/261 ,  E03D11/13 ,  E03D11/16 ,  E03D2201/30 ,  Y10S4/07 ,  Y10S4/09 ,  Y10S285/915

    Abstract: A discharge port (2) of a stool body (1) formed to face a floor surface, on which the stool body is installed, is connected to a drainage pipe (3) from a building through a discharge side connection pipe (6) connected to the discharge port (2), a drainage side connection pipe (7) connected to the drainage pipe (3), and a connection pipe (8) connecting the pipes (6 and 7) to each other. In piping connection, a length of the connection pipe (8) is adjusted by cutting the connection pipe (8) in accordance with a distance between the discharge port (2) and the drainage pipe (3) and making use of overlapping lengths for insertion.

    Abstract translation: 将粪便体（1）的排出口（2）形成为与安装有粪便体的地板面相对的排水口（2）通过排出侧连接管（6）从建筑物连接到排水管（3） 连接到排水管（3）的排水侧连接管（7）和将管（6和7）彼此连接的连接管（8）连接到排出口（2）。 在管道连接中，通过根据排出口（2）和排水管（3）之间的距离切割连接管（8）并利用重叠长度进行插入来调节连接管（8）的长度 。

    SEMICONDUCTOR DEVICE AND SOLID STATE RELAY USING SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND SOLID STATE RELAY USING SAME 审中-公开
    半导体器件和使用相同的固态继电器

    公开(公告)号：WO2011151681A3

    公开(公告)日：2012-04-19

    申请号：PCT/IB2011000350

    申请日：2011-02-23

    Applicant: PANASONIC CORP ,  OKADA HIROSHI ,  SUNADA TAKUYA ,  OOMORI TAKESHI

    Inventor： OKADA HIROSHI ,  SUNADA TAKUYA ,  OOMORI TAKESHI

    IPC: H01L27/04 ,  H01L27/06 ,  H01L29/06 ,  H01L29/12 ,  H01L29/78 ,  H01L31/12 ,  H03K17/78

    CPC classification number: H01L29/66068 ,  H01L24/37 ,  H01L24/40 ,  H01L25/167 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/7811 ,  H01L2224/37011 ,  H01L2224/40245 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1306 ,  H01L2924/13091 ,  H03K17/6874 ,  H03K17/785 ,  H03K2217/0009 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/84

    Abstract: A semiconductor device wherein at least one transistor cell is provided in a silicon carbide (SiC) substrate (1) of a first conductivity type. Each transistor cell is provided with: a well region (3) of a second conductivity type, which is formed in the first surface of the SiC substrate (1); a source region (4) configured from a region of the first conductivity type, which is formed within the well region (3); a gate electrode (7) formed thereupon with a gate-insulating film (6) interposed therebetween; a source electrode (5) formed so as to contact the source region (4); and a drain electrode (9) formed on the second surface side of the SiC substrate (1). The semiconductor device is further provided with a region (3p) of the second conductivity type, which is located to the outside of the outermost transistor cells, surrounds the well regions (3) at positions adjacent thereto, and is insulated from the gate electrode (7) and the source electrode (5). As a result of this configuration, it is possible to reduce the leakage current when applying a high voltage.

    Abstract translation: 一种半导体器件，其中至少一个晶体管单元设置在第一导电类型的碳化硅（SiC）衬底（1）中。 每个晶体管单元设置有形成在SiC衬底（1）的第一表面中的第二导电类型的阱区（3）; 源区域（4），其由形成在所述阱区域（3）内的所述第一导电类型的区域构成; 在其间形成有栅极绝缘膜（6）的栅电极（7）; 形成为与源极区域（4）接触的源极（5）; 和形成在SiC衬底（1）的第二表面侧上的漏电极（9）。 半导体器件还设置有位于最外晶体管单元的外侧的第二导电类型的区域（3p），在与其相邻的位置处围绕阱区域（3），并与栅电极（ 7）和源电极（5）。 作为该结构的结果，可以在施加高电压时减小漏电流。

    CENTRIFUGAL TUMBLING GRANULATOR AND POWDER TREATING METHOD USING THE SAME
    8.
    发明申请
    CENTRIFUGAL TUMBLING GRANULATOR AND POWDER TREATING METHOD USING THE SAME 审中-公开
    离心滚压成型机及其使用的粉末处理方法

    公开(公告)号：WO0168232A8

    公开(公告)日：2001-12-20

    申请号：PCT/JP0008568

    申请日：2000-12-04

    Applicant: FREUNT IND CO LTD ,  IWASAKI AKIRA ,  OKADA HIROSHI ,  YAMANAKA KUNIAKI ,  ISOBE SHIGEMI

    Inventor： IWASAKI AKIRA ,  OKADA HIROSHI ,  YAMANAKA KUNIAKI ,  ISOBE SHIGEMI

    IPC: A23P1/02 ,  B01J2/14 ,  B01J2/16

    CPC classification number: B01J2/16 ,  B01J2/14

    Abstract: A centrifugal tumbling granulator wherein an upper diametrically reduced portion (8) upwardly diametrically reduced is installed as an inner guide means above a cylindrical lateral wall (6) having a powder-contact portion (6a) in the inside. Rotation of a rotary plate (7) causes a powder (2) placed on the rotary plate to centrifugally rise along the powder-contact portion (6a), and the diametrically reduced powder-contact portion (8a) of the upper diametrically reduced portion (8) guides the powder (2) inwardly of a centrifugal tumbling chamber (5) to execute a vortex circulating motion, so that the centrifugal tumbling granulator, unlike a conventional one, imparts a sufficient tumbling action even to an amorphous fine powder. Additionally, a drying air feed means may be installed above the rotary plate.

    Abstract translation: 一种离心翻转造粒机，其中在直径上减小的上径向缩小部分（8）作为内部导向装置安装在内部具有粉末接触部分（6a）的圆柱形侧壁（6）上方。 旋转板（7）的旋转使放置在旋转板上的粉末（2）沿着粉末接触部分（6a）离心地上升，并且沿直径方向减小的粉末接触部分（8a） 8）将粉末（2）引导到离心翻滚室（5）内部以执行涡流循环运动，从而离心翻转成粒机不同于传统的翻滚成粒机，即使对于无定形细粉末也赋予足够的翻滚作用。 另外，干燥空气供给装置可以安装在旋转盘的上方。

    PYRIDAZINONE DERIVATIVES OR THEIR SALTS, PROCESSES FOR THEIR PRODUCTION, AND ANTI-SHOCK AGENTS CONTAINING THEM
    9.
    发明申请
    PYRIDAZINONE DERIVATIVES OR THEIR SALTS, PROCESSES FOR THEIR PRODUCTION, AND ANTI-SHOCK AGENTS CONTAINING THEM 审中-公开
    吡咯烷酮衍生物或其生产商，其生产工艺和包含它们的抗震剂

    公开(公告)号：WO1995007264A1

    公开(公告)日：1995-03-16

    申请号：PCT/JP1994001380

    申请日：1994-08-22

    Applicant: ISHIHARA SANGYO KAISHA LTD. ,  SHIGEHARA, Itaru ,  ODAWARA, Shinji ,  OKADA, Hiroshi ,  KIMURA, Hirohiko ,  OMATSU, Masato ,  NAKAYAMA, Hitoshi ,  HIGUCHI, Rie ,  TAKENAMI, Taki

    Inventor： ISHIHARA SANGYO KAISHA LTD.

    IPC: C07D237/24

    CPC classification number: C07D401/12 ,  C07D237/14 ,  C07D237/24 ,  C07D405/14 ,  C07D417/12

    Abstract: A pyridazinone derivative of formula (I) or a pharmaceutically acceptable salt thereof, wherein Q is -CH2- or -CO-, A is a furanyl group which may be substituted, a thienyl group which may be substituted, a pyridyl group which may be substituted, a pyridyl N-oxide group which may be substituted, a thiazolyl group which may be substituted, or a phenyl group which may be substituted, R is a hydrogen atom, an alkyl group which may be substituted, an alkenyl group which may be substituted, an alkynyl group which may be substituted, or a phenyl group which may be substituted, R is a hydrogen atom, a cyano group, an alkyl group which may be substituted, a hydroxyl group, an alkoxy group, a dioxanyl group which may be substituted by an alkyl group, -CH=N-R , -S(O)nR , -N(R )R , or -COR , R is a hydrogen atom, a cyano group, a nitro group, an alkoxy group, a carboxyl group or an alkoxycarbonyl group, R is a hydrogen atom, or an alkyl group which may be substituted, R is an alkoxy group, or a pyridylmethyl group, R is an alkyl group which may be substituted, or an alkenyl group, each of R and R independently is a hydrogen atom, an alkyl group, an alkylsulfonyl group, a phenylsulfonyl group which may be substituted, a formyl group, an alkylcarbonyl group which may be substituted by a halogen atom, a cycloalkylcarbonyl group, or a benzoyl group which may be substituted, R is a hydrogen atom, an alkoxy group, a hydroxyl group, or an amino group which may be substituted, n is 0, 1 or 2, provided that when R is a hydrogen atom, an alkyl group or an alkoxy group, and Q is -CH2-, A is a furanyl group which may be substituted, a thienyl group which may be substituted, a pyridyl group which may be substituted, a pyridyl N-oxide group which may be substituted, or a thiazolyl group which may be substituted.

    Abstract translation: 式（I）的哒嗪酮衍生物或其药学上可接受的盐，其中Q是-CH2-或-CO-，A是可被取代的呋喃基，可被取代的噻吩基，可以是 取代的，可被取代的吡啶基N-氧化物基团，可被取代的噻唑基或可被取代的苯基，R 1是氢原子，可被取代的烷基，烯基 可以被取代的炔基，可被取代的炔基或可被取代的苯基，R 2是氢原子，氰基，可被取代的烷基，羟基，烷氧基 ，可被烷基取代的二烷基，-CH = NR 5，-S（O）n R 6，-N（R 7）R 8或-COR 9 R 3为氢原子，氰基，硝基，烷氧基，羧基或烷氧基羰基，R 4为氢原子或可被取代的烷基， 5>我 是烷氧基或吡啶基甲基，R 6是可以被取代的烷基或链烯基，R 7和R 8各自独立地是氢原子，烷基， 烷基磺酰基，可被取代的苯基磺酰基，甲酰基，可以被卤素原子取代的烷基羰基，环烷基羰基或可被取代的苯甲酰基，R 9是氢原子， 烷氧基，羟基或可被取代的氨基，n为0,1或2，条件是当R 2为氢原子，烷基或烷氧基时，Q为-CH 2 - A是可以被取代的呋喃基，可以被取代的噻吩基，可以被取代的吡啶基，可以被取代的吡啶基N-氧化物基或可以被取代的噻唑基。

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