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    INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF
    1.
    发明申请
    INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF 审中-公开
    具有射频控制的电感耦合等离子体反应器及其使用方法

    公开(公告)号：WO2010102161A3

    公开(公告)日：2011-01-13

    申请号：PCT/US2010026291

    申请日：2010-03-05

    Applicant: APPLIED MATERIALS INC ,  GRIMBERGEN MICHAEL N ,  OUYE ALAN HIROSHI ,  TODOROW VALENTIN N

    Inventor： GRIMBERGEN MICHAEL N ,  OUYE ALAN HIROSHI ,  TODOROW VALENTIN N

    IPC: H05H1/36 ,  H01L21/3065

    CPC classification number: H01J37/32165 ,  H01J37/321 ,  H01L21/67069

    Abstract: Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

    Abstract translation: 本发明的实施例通常提供具有衬底RF偏压的电感耦合等离子体（ICP）反应器，其能够控制ICP源（第一RF源）和衬底偏压（第二RF源）之间的RF相位差， 用于半导体工业中使用的等离子体处理反应器。 RF相位差的控制为微调过程提供了强大的旋钮。 例如，可以使用RF相位差的控制来控制平均蚀刻速率，蚀刻速率均匀性，蚀刻速率偏斜，临界尺寸（CD）均匀性和CD偏斜，CD范围，自身DC偏置控制中的一个或多个，以及 室匹配。

    DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING
    3.
    发明申请
    DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING 审中-公开
    用于等离子体激光的阴极直流电压充电

    公开(公告)号：WO2011119471A3

    公开(公告)日：2012-01-19

    申请号：PCT/US2011029160

    申请日：2011-03-21

    Applicant: APPLIED MATERIALS INC ,  OUYE ALAN HIROSHI ,  BIVENS DARIN ,  KNICK DAVID

    Inventor： OUYE ALAN HIROSHI ,  BIVENS DARIN ,  KNICK DAVID

    IPC: H01L21/027 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: G03F1/80

    Abstract: Methods for processing photomasks are provided herein. In some embodiments, a method for processing a photomask may include providing a photomask to a substrate support within a process chamber; providing a process gas to the process chamber having the photomask disposed therein; providing a negative or zero voltage to a substrate support cathode having the photomask disposed thereon; providing a source RF power to an anode coupled to the process chamber to ignite the process gas to form a plasma; and processing the photomask.

    Abstract translation: 本文提供了处理光掩模的方法。 在一些实施例中，用于处理光掩模的方法可以包括向处理室内的衬底支撑件提供光掩模; 向具有设置在其中的光掩模的处理室提供处理气体; 向其上设置有光掩模的衬底支撑阴极提供负电压或零电压; 向耦合到所述处理室的阳极提供源RF功率以点燃所述工艺气体以形成等离子体; 并处理光掩模。

    CHAMBER LID HEATER RING ASSEMBLY
    4.
    发明申请
    CHAMBER LID HEATER RING ASSEMBLY 审中-公开
    室内加热器组件

    公开(公告)号：WO2012054238A3

    公开(公告)日：2012-06-14

    申请号：PCT/US2011055100

    申请日：2011-10-06

    Applicant: APPLIED MATERIALS INC ,  OUYE ALAN H ,  SCOTT GRAEME ,  YU KEVEN KAISHENG ,  GRIMBERGEN MICHAEL N

    Inventor： OUYE ALAN H ,  SCOTT GRAEME ,  YU KEVEN KAISHENG ,  GRIMBERGEN MICHAEL N

    IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/205

    CPC classification number: H05B3/42 ,  H01J37/32522 ,  H05B2203/003

    Abstract: Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.

    Abstract translation: 本发明的实施例通常提供一种用于等离子体处理室的盖式加热器。 在一个实施例中，提供了包括导热基座的盖加热器组件。 导热基座具有限定内部开口的平面环状。 盖加热器组件还包括设置在导热基座上的加热元件，以及横跨导热基底的内部开口设置的绝缘中心芯。

    DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING
    5.
    发明申请
    DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING 审中-公开
    用于等离子体激光的阴极直流电压充电

    公开(公告)号：WO2011119471A2

    公开(公告)日：2011-09-29

    申请号：PCT/US2011/029160

    申请日：2011-03-21

    Applicant: APPLIED MATERIALS, INC. ,  OUYE, Alan Hiroshi ,  BIVENS, Darin ,  KNICK, David

    Inventor： OUYE, Alan Hiroshi ,  BIVENS, Darin ,  KNICK, David

    IPC: H01L21/027 ,  G03F1/08 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: G03F1/80

    Abstract: Methods for processing photomasks are provided herein. In some embodiments, a method for processing a photomask may include providing a photomask to a substrate support within a process chamber; providing a process gas to the process chamber having the photomask disposed therein; providing a negative or zero voltage to a substrate support cathode having the photomask disposed thereon; providing a source RF power to an anode coupled to the process chamber to ignite the process gas to form a plasma; and processing the photomask.

    Abstract translation: 本文提供了处理光掩模的方法。 在一些实施例中，用于处理光掩模的方法可以包括向处理室内的衬底支撑件提供光掩模; 向具有设置在其中的光掩模的处理室提供处理气体; 向其上设置有光掩模的衬底支撑阴极提供负电压或零电压; 向耦合到所述处理室的阳极提供源RF功率以点燃所述工艺气体以形成等离子体; 并处理光掩模。

    INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF
    9.
    发明申请
    INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF 审中-公开
    具有射频控制的电感耦合等离子体反应器及其使用方法

    公开(公告)号：WO2010102161A2

    公开(公告)日：2010-09-10

    申请号：PCT/US2010/026291

    申请日：2010-03-05

    Applicant: APPLIED MATERIALS, INC. ,  GRIMBERGEN, Michael, N. ,  OUYE, Alan, Hiroshi ,  TODOROW, Valentin, N.

    Inventor： GRIMBERGEN, Michael, N. ,  OUYE, Alan, Hiroshi ,  TODOROW, Valentin, N.

    IPC: H05H1/36 ,  H01L21/3065

    CPC classification number: H01J37/32165 ,  H01J37/321 ,  H01L21/67069

    Abstract: Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

    Abstract translation: 本发明的实施例通常提供具有衬底RF偏压的电感耦合等离子体（ICP）反应器，其能够控制ICP源（第一RF源）与第一RF源（第一RF源）之间的RF相位差 用于半导体工业中的等离子体处理反应器的衬底偏压（第二RF源）。 RF相位差的控制为微调过程提供了强大的旋钮。 例如，可以使用RF相位差的控制来控制平均蚀刻速率，蚀刻速率均匀性，蚀刻速率偏斜，临界尺寸（CD）均匀性和CD偏斜，CD范围，自身DC偏置控制中的一个或多个，以及 室匹配。

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