公开(公告)号：WO2009144617A1

公开(公告)日：2009-12-03

申请号：PCT/IB2009/052082

申请日：2009-05-19

Applicant: NXP B.V. ,  THEEUWEN, Stephan, J., C., H. ,  PEUSCHER, Henk, J. ,  VAN DEN HEUVEL, Rene ,  BRON, Paul

Inventor： THEEUWEN, Stephan, J., C., H. ,  PEUSCHER, Henk, J. ,  VAN DEN HEUVEL, Rene ,  BRON, Paul

IPC: H01L29/78 ,  H01L29/45 ,  H01L21/336 ,  H01L29/417 ,  H01L29/40 ,  H01L21/225 ,  H01L23/482 ,  H01L23/532

CPC classification number: H01L29/7835 ,  H01L21/2257 ,  H01L21/28525 ,  H01L21/76895 ,  H01L23/522 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/66659 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An LDMOS transistor (100) on a substrate (70a, 70b) of a first conductivity type, comprises a source region (10) with a source portion (73) and a drain region (12). The source portion and drain region are of a second conductivity type opposite to the first conductivity type and are mutually connected through a channel region (28) in the substrate over which a gate electrode (14) extends. The drain region comprises a drain contact region (16) and a drain extension region (15) which extends from the channel region (28) towards the drain contact region. The drain contact region is electrically connected to a top metal layer (22) by a drain contact (20), and a poly-Si drain contact layer (80) is arranged as a first contact material in between the drain contact region and the drain contact in a contact opening (51) of a first dielectric layer (52) deposited on the surface of the drain region. The poly-Si drain contact layer comprises a dopant element of the second conductivity type which is diffused therefrom through annealing to form said drain contact region.

Abstract translation: 在第一导电类型的衬底（70a，70b）上的LDMOS晶体管（100）包括具有源极部分（73）和漏极区域（12）的源极区域（10）。 源区和漏区具有与第一导电类型相反的第二导电类型，并且通过栅极电极（14）延伸的衬底中的沟道区（28）相互连接。 漏极区域包括漏极接触区域（16）和从沟道区域（28）向漏极接触区域延伸的漏极延伸区域（15）。 漏极接触区域通过漏极接触（20）与顶部金属层（22）电连接，并且多晶硅漏极接触层（80）作为第一接触材料布置在漏极接触区域和漏极 在沉积在漏极区域的表面上的第一介电层（52）的接触开口（51）中接触。 多晶硅漏极接触层包括第二导电类型的掺杂元素，其通过退火从其扩散以形成所述漏极接触区域。