公开(公告)号：WO2006088881A3

公开(公告)日：2007-01-18

申请号：PCT/US2006005204

申请日：2006-02-14

Applicant: IBM ,  SONY CORP ,  NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

Inventor： NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

IPC: H01L21/31

CPC classification number: H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

Abstract: A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter "SiCOH") in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, -CH 2 - crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH 3 +CH 2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH 3 bonding of greater than about 2.0, and a peak area for Si-O-Si bonding of greater than about 60%, and a porosity of greater than about 20%.

Abstract translation: 在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高 键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和更少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有小于约1.40的CH 3 N 2 CH 2拉伸峰面积的FTIR光谱，SiH拉伸的峰面积小于 约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％ 。

公开(公告)号：WO2006088881A2

公开(公告)日：2006-08-24

申请号：PCT/US2006/005204

申请日：2006-02-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SONY CORPORATION ,  NGUYEN, Son, V. ,  LANE, Sarah, L. ,  LEE, Jia ,  IDA, Kensaku ,  RESTAINO, Darryl, D. ,  NOGAMI, Takeshi

Inventor： NGUYEN, Son, V. ,  LANE, Sarah, L. ,  LEE, Jia ,  IDA, Kensaku ,  RESTAINO, Darryl, D. ,  NOGAMI, Takeshi

IPC: H01L21/31

CPC classification number: H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

Abstract: A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter "SiCOH") in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, -CH 2 - crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH 3 +CH 2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH 3 bonding of greater than about 2.0, and a peak area for Si-O-Si bonding of greater than about 60%, and a porosity of greater than about 20%.

Abstract translation: 在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高 键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和较少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有包含小于约1.40的CH 3 N 2 CH 2拉伸的峰面积的FTIR光谱，SiH拉伸的峰面积小于 约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％ 。

公开(公告)号：WO2006096813A2

公开(公告)日：2006-09-14

申请号：PCT/US2006008449

申请日：2006-03-08

Applicant: IBM ,  SONY CORP ,  NGUYEN SON V ,  LANE SARAH L ,  LINIGER ERIC G ,  IDA KENSAKU ,  RESTAINO DARRYL D

Inventor： NGUYEN SON V ,  LANE SARAH L ,  LINIGER ERIC G ,  IDA KENSAKU ,  RESTAINO DARRYL D

IPC: H01L21/469 ,  H01L23/52 ,  H01L23/58

CPC classification number: H01L21/76801 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A material stack (12) is provided comprising one or more films (14) that have a crack velocity of about IE- 10 m/sec or greater and at least one monolayer (16) within or in direct contact with the one or more films (14), wherein the at least one monolayer (16) reduces the crack velocity of the material stack (12) to a value of less than lE-10 m/sec. The one or more films ( 14) are not limited to low k dielectrics, but may include materials such as a metal. In a preferred embodiment, a low k dielectric stack (12) is provided, having an effective dielectric constant k, of about 3.0 or less, in which the mechanical properties of the stack (12) are improved by introducing at least one nanolayer (16) into the dielectric stack (12). The improvement in mechanical properties is achieved without significantly increasing the dielectric constant of me films within the stack (12) and without the need of subjecting the inventive dielectric stack (12) to any post treatment steps.

Abstract translation: 提供材料堆叠（12），其包括一个或多个膜（14），其具有大约IE-10m / sec或更大的裂纹速度和至少一个单层（16）在一个或多个膜内或直接接触一个或多个膜 （14），其中所述至少一个单层（16）将所述材料堆叠（12）的裂纹速度降低到小于1E-10m / sec的值。 一个或多个膜（14）不限于低k电介质，而是可以包括诸如金属的材料。 在优选实施例中，提供具有约3.0或更小的有效介电常数k的低k电介质堆叠（12），其中通过引入至少一个纳米层（16）来提高堆叠（12）的机械性能 ）到介电叠层（12）中。 在不显着增加叠层（12）内的薄膜的介电常数并且不需要对本发明的电介质叠层（12）进行任何后处理步骤的情况下，实现机械性能的改善。

公开(公告)号：WO2008118729A1

公开(公告)日：2008-10-02

申请号：PCT/US2008/057600

申请日：2008-03-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  APPLIED MATERIALS, INC. ,  EDELSTEIN, Daniel, C. ,  DEMOS, Alexandros ,  GATES, Stephen, M. ,  GRILL, Alfred ,  MOLIS, Steven, E. ,  NGUYEN, Vu Ngoc, Tran ,  REITER, Steven ,  RESTAINO, Darryl, D. ,  YIM, Kang, Sub

Inventor： EDELSTEIN, Daniel, C. ,  DEMOS, Alexandros ,  GATES, Stephen, M. ,  GRILL, Alfred ,  MOLIS, Steven, E. ,  NGUYEN, Vu Ngoc, Tran ,  REITER, Steven ,  RESTAINO, Darryl, D. ,  YIM, Kang, Sub

IPC: H01L21/4763

CPC classification number: C23C16/401 ,  C23C16/0272 ,  C23C16/029 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10T428/24851 ,  Y10T428/249961

Abstract: Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

Abstract translation: 公开了一种用于形成包括具有增加的机械强度的SiCOH层的结构的结构和方法。 该结构包括具有电介质或导电材料层的基底，介电层或导电材料层上的氧化物层，氧化物层基本上不含碳，氧化物层上的渐变过渡层，梯度过渡层基本上 在与氧化物层的界面处没有碳并逐渐向多孔SiCOH层增加碳，并且在渐变过渡层上的多孔SiCOH（pSiCOH）层，多孔pSiCOH层在整个层中具有均匀的组成。 该方法包括一种方法，其中在渐变过渡层中，在碳浓度中没有峰，而在氧浓度中没有下降。

公开(公告)号：WO2006096813A3

公开(公告)日：2006-09-14

申请号：PCT/US2006/008449

申请日：2006-03-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SONY CORPORATION ,  NGUYEN, Son, V. ,  LANE, Sarah, L. ,  LINIGER, Eric, G. ,  IDA, Kensaku ,  RESTAINO, Darryl, D.

Inventor： NGUYEN, Son, V. ,  LANE, Sarah, L. ,  LINIGER, Eric, G. ,  IDA, Kensaku ,  RESTAINO, Darryl, D.

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

Abstract: A material stack (12) is provided comprising one or more films (14) that have a crack velocity of about IE- 10 m/sec or greater and at least one monolayer (16) within or in direct contact with the one or more films (14), wherein the at least one monolayer (16) reduces the crack velocity of the material stack (12) to a value of less than lE-10 m/sec. The one or more films ( 14) are not limited to low k dielectrics, but may include materials such as a metal. In a preferred embodiment, a low k dielectric stack (12) is provided, having an effective dielectric constant k, of about 3.0 or less, in which the mechanical properties of the stack (12) are improved by introducing at least one nanolayer (16) into the dielectric stack (12). The improvement in mechanical properties is achieved without significantly increasing the dielectric constant of me films within the stack (12) and without the need of subjecting the inventive dielectric stack (12) to any post treatment steps.