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    HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION
    1.
    发明申请
    HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION 审中-公开
    高密度HELICON等离子体源用于宽度的RIBBON离子束生成

    公开(公告)号：WO2010025099A3

    公开(公告)日：2010-04-29

    申请号：PCT/US2009054724

    申请日：2009-08-24

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  BILOIU COSTEL ,  PEREL ALEXANDER S ,  SCHEUER JAY T

    Inventor： BILOIU COSTEL ,  PEREL ALEXANDER S ,  SCHEUER JAY T

    IPC: H01L21/265 ,  H05H1/34

    CPC classification number: H05H1/46 ,  H01J27/18 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0817 ,  H01L21/26513 ,  H01L21/67005

    Abstract: An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

    Abstract translation: 公开了一种利用一个或多个螺旋等离子体源产生高密度宽带状离子束的离子源。 除了螺旋型等离子体源之外，离子源还包括扩散室。 扩散室具有沿着与螺旋等离子体源的介质圆筒相同的轴线定向的提取孔。 在一个实施例中，位于扩散室的相对端上的双螺旋等离子体源用于产生更均匀的提取的离子束。 在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

    HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION
    2.
    发明申请
    HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION 审中-公开
    宽带宽离子束发生的高密度等离子体等离子体源

    公开(公告)号：WO2010025099A2

    公开(公告)日：2010-03-04

    申请号：PCT/US2009/054724

    申请日：2009-08-24

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  BILOIU, Costel ,  PEREL, Alexander, S. ,  SCHEUER, Jay, T.

    Inventor： BILOIU, Costel ,  PEREL, Alexander, S. ,  SCHEUER, Jay, T.

    IPC: H01L21/265 ,  H05H1/34

    CPC classification number: H05H1/46 ,  H01J27/18 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0817 ,  H01L21/26513 ,  H01L21/67005

    Abstract: An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

    Abstract translation: 公开了一种利用一个或多个螺旋等离子体源能够产生高密度宽带状离子束的离子源。 除了螺旋等离子体源之外，离子源还包括扩散室。 扩散室具有沿着与螺旋等离子体源的介电柱相同的轴定向的提取孔。 在一个实施例中，位于扩散腔室的相对端部上的双螺旋等离子体源用于产生更均匀的提取离子束。 在另一个实施例中，使用多螺旋磁场来进一步改善提取的离子束的均匀性。

    REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES
    3.
    发明申请
    REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES 审中-公开
    CMOS器件中源极和漏极寄生电容的降低

    公开(公告)号：WO2006026180A2

    公开(公告)日：2006-03-09

    申请号：PCT/US2005/029454

    申请日：2005-08-18

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  EROKHIN, Yuri ,  JEONG, Ukyo ,  SCHEUER, Jay, T. ,  WALTHER, Steven, R.

    Inventor： EROKHIN, Yuri ,  JEONG, Ukyo ,  SCHEUER, Jay, T. ,  WALTHER, Steven, R.

    IPC: H01L21/225 ,  H01L21/265 ,  H01L21/336 ,  H01L29/78

    CPC classification number: H01L21/2236 ,  H01L29/66575

    Abstract: A method for fabricating a semiconductor-based device includes providing a doped semiconductor substrate, introducing a second dopant into the substrate to define a pn junction, and introducing a neutralizing species into the substrate in the neighborhood of the pn junction to reduce a capacitance associated with the pn junction. A semiconductor-based device includes a semiconductor substrate having first and second dopants, and a neutralizing species. The first and second dopants define a pn junction, and the neutralizing species neutralizes a portion of the first dopant in the neighborhood of the pn junction to decrease a capacitance associated with the pn junction.

    Abstract translation: 用于制造基于半导体的器件的方法包括提供掺杂的半导体衬底，将第二掺杂剂引入到衬底中以限定pn结，并且将中和物质引入衬底中的邻近衬底 pn结以减小与pn结相关联的电容。 基于半导体的器件包括具有第一和第二掺杂剂以及中和物质的半导体衬底。 第一和第二掺杂剂限定pn结，并且中和物质中和pn结附近的第一掺杂剂的一部分，以减小与pn结相关的电容。

    RF ELECTRON SOURCE FOR IONIZING GAS CLUSTERS
    5.
    发明申请
    RF ELECTRON SOURCE FOR IONIZING GAS CLUSTERS 审中-公开
    用于气化气体集束的射频电子源

    公开(公告)号：WO2009085954A2

    公开(公告)日：2009-07-09

    申请号：PCT/US2008087430

    申请日：2008-12-18

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  OLSON JOSEPH C ,  SCHEUER JAY T

    Inventor： OLSON JOSEPH C ,  SCHEUER JAY T

    IPC: H01J37/30 ,  H01L21/26

    CPC classification number: H01J27/18 ,  H01J27/026 ,  H01J37/08 ,  H01J37/30 ,  H01J37/31 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/0812 ,  H01J2237/31701

    Abstract: The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.

    Abstract translation: 本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。 气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。 这种污染是由于使用热电离源引起的，这些热源能够施加污染物，并且由于其运行温度升高而对生命周期的影响也很小。 虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。 在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。 通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。

    REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES
    6.
    发明申请
    REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES 审中-公开
    降低CMOS器件中的源极和漏极寄生电容

    公开(公告)号：WO2006026180A3

    公开(公告)日：2006-08-03

    申请号：PCT/US2005029454

    申请日：2005-08-18

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  EROKHIN YURI ,  JEONG UKYO ,  SCHEUER JAY T ,  WALTHER STEVEN R

    Inventor： EROKHIN YURI ,  JEONG UKYO ,  SCHEUER JAY T ,  WALTHER STEVEN R

    IPC: H01L21/225 ,  H01L21/265 ,  H01L21/336 ,  H01L29/78

    CPC classification number: H01L21/2236 ,  H01L29/66575

    Abstract: A method for fabricating a semiconductor-based device includes providing a doped semiconductor substrate, introducing a second dopant into the substrate to define a pn junction, and introducing a neutralizing species into the substrate in the neighborhood of the pn junction to reduce a capacitance associated with the pn junction. A semiconductor-based device includes a semiconductor substrate having first and second dopants, and a neutralizing species. The first and second dopants define a pn junction, and the neutralizing species neutralizes a portion of the first dopant in the neighborhood of the pn junction to decrease a capacitance associated with the pn junction.

    Abstract translation: 一种用于制造基于半导体的器件的方法包括提供掺杂的半导体衬底，将第二掺杂剂引入到衬底中以限定pn结，并将中和物质引入到pn结附近的衬底中，以减少与 pn结。 基于半导体的器件包括具有第一和第二掺杂剂的半导体衬底和中和物质。 第一和第二掺杂剂限定pn结，并且中和物质中和pn结附近的第一掺杂剂的一部分以减少与pn结相关联的电容。

    METHOD AND APPARATUS FOR PLASMA DOSE MEASUREMENT
    9.
    发明申请
    METHOD AND APPARATUS FOR PLASMA DOSE MEASUREMENT 审中-公开
    用于等离子体剂量测量的方法和装置

    公开(公告)号：WO2010075283A2

    公开(公告)日：2010-07-01

    申请号：PCT/US2009/068996

    申请日：2009-12-21

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  DZENGELESKI, Joseph, P. ,  MILLER, Timothy, J. ,  SCHEUER, Jay, T. ,  LEAVITT, Christopher, J.

    Inventor： DZENGELESKI, Joseph, P. ,  MILLER, Timothy, J. ,  SCHEUER, Jay, T. ,  LEAVITT, Christopher, J.

    IPC: H01L21/66 ,  H01L21/265

    CPC classification number: G01T1/00

    Abstract: An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process.

    Abstract translation: 非法拉第离子剂量测量装置位于等离子体处理室内，并且包括位于室内的工件上方的传感器。 传感器被配置为检测从暴露于等离子体注入工艺的工件的表面发射的二次电子的数量。 传感器输出与检测到的二次电子成比例的电流信号。 当前电路减去从传感器产生的检测到的次级电流，并从提供给腔室内的工件的偏置电流中减去它。 电流之间的差异提供了在原位和植入过程中计算的离子剂量电流的测量。

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