公开(公告)号：WO2009097737A1

公开(公告)日：2009-08-13

申请号：PCT/CN2009/000071

申请日：2009-01-19

Applicant: 安集微电子(上海)有限公司 ,  王晨 ,  荆建芬 ,  杨春晓

Inventor： 王晨 ,  荆建芬 ,  杨春晓

IPC: C09K3/14 ,  H01L21/304 ,  C09G1/02

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463

公开(公告)号：WO2009070969A1

公开(公告)日：2009-06-11

申请号：PCT/CN2008/001858

申请日：2008-11-07

Applicant: 安集微电子(上海)有限公司 ,  荆建芬 ,  杨春晓 ,  王晨

Inventor： 荆建芬 ,  杨春晓 ,  王晨

IPC: C09G1/02

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing liquid for polysilicon is disclosed, which contains abrasive particles, water and at least one compound having more than two group of [-C(NH)-NH-]. The polishing liquid can improve the removal rate of polysilicon and selection ratio of polysilicon to dielectric material. It has better application foreground in the production field of the wafers of semiconductor and the like.

公开(公告)号：WO2008116379A1

公开(公告)日：2008-10-02

申请号：PCT/CN2008/000510

申请日：2008-03-14

Applicant: 安集微电子(上海)有限公司 ,  荆建芬 ,  杨春晓

Inventor： 荆建芬 ,  杨春晓

IPC: C11D7/18 ,  C11D7/32 ,  H01L21/302

CPC classification number: C11D7/3272 ,  C11D7/04 ,  C11D7/26 ,  H01L21/02065 ,  H01L21/02074

Abstract: A cleaning solution is provided, which includes at least one type of oxidizer, at least one type of guanidine compound and water. The use of the cleaning solution in wafer cleaning after CMP is also provided.

公开(公告)号：WO2008067731A1

公开(公告)日：2008-06-12

申请号：PCT/CN2007/003482

申请日：2007-12-07

Applicant: 安集微电子(上海)有限公司 ,  杨春晓 ,  荆建芬

Inventor： 杨春晓 ,  荆建芬

IPC: C09G1/02 ,  C09G1/16 ,  H01L21/304

CPC classification number: H01L21/32133 ,  C09G1/02

Abstract: The present invention discloses the application of polymers which comprise repeating units containing -(RO)- or -(RCOO)- groups in production of chemical mechanical polishing liquid of self-etch-stop of polysilicon and usage of the same, in which R is alkyl of C 1-10 . The polymers of the invention are used in production of polishing liquid and usage of the same, it can realize the process of self-etch-stop mechanism in chemical mechanical polishing of polysilicon under polishing conditions of constant conventional technical parameter, so as to prevent silicon dioxide channels from generating dishing defects of polysilicon, and to remove residual polysilicon from the silicon dioxide dishing defects and improve surface flatness of the polished wafers. Furthermore it has wide technology window, which can greatly improve the productivity and lower the cost.

公开(公告)号：WO2008052423A1

公开(公告)日：2008-05-08

申请号：PCT/CN2007/003018

申请日：2007-10-22

Applicant: 安集微电子(上海)有限公司 ,  荆建芬 ,  杨春晓

Inventor： 荆建芬 ,  杨春晓

IPC: C09G1/02

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing liquid for polishing polysilicon is disclosed, which comprises abrasive particles and water, and is characterized in that further comprises one or more kind of quaternary ammonium-type cationic surfactants. The polishing liquid can polish polysilicon better under basic condition and may significantly reduce the removal rate of polysilicon and the selectivity ratio of polysilicon and SiO 2 , and may obviously improve the planarizartion-efficiency of polysilicon.

公开(公告)号：WO2008058458A1

公开(公告)日：2008-05-22

申请号：PCT/CN2007/003196

申请日：2007-11-12

Applicant: 安集微电子(上海)有限公司 ,  俞昌 ,  杨春晓 ,  荆建芬

Inventor： 俞昌 ,  杨春晓 ,  荆建芬

IPC: H01L21/302 ,  H01L21/304 ,  H01L21/321

CPC classification number: H01L21/3212 ,  H01L21/31053

Abstract: A multiplestep CMP method is provided The method comprises the following CMP steps The first CMP step comprises chemical-mechanical polishing process which most of polysilicon are removed at a rate of 200 A/min or larger by using a CMP solution, without exposing the surface of polysilicon After an oxidant is added into the CMP solution, the second CMP step is performed by using the CMP solution which polishes the surface of polysilicon and silicon oxide The method can avoid surface dishing, improve wafer flatness, and make the process more stable

公开(公告)号：WO2008040182A1

公开(公告)日：2008-04-10

申请号：PCT/CN2007/002807

申请日：2007-09-24

Applicant: 安集微电子(上海)有限公司 ,  荆建芬 ,  杨春晓

Inventor： 荆建芬 ,  杨春晓

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: A chemical-mechanical polishing liquid for polishing polysilicon is disclosed, which comprises abrasive particles and water, and further comprises one or more kind of polylol-type nonionic surfactants. The polishing liquid is a novel CMP liquid which can polish polysilicon-film better under basic condition. The polishing liquid may significantly reduce the removal rate of polysilicon, adjust the selectivity ratio of polysilicon and SiO 2 , and obviously improve the planarizartion-efficiency of polysilicon.

公开(公告)号：WO2008040158A1

公开(公告)日：2008-04-10

申请号：PCT/CN2007/002716

申请日：2007-09-14

Applicant: 安集微电子(上海)有限公司 ,  荆建芬 ,  杨春晓

Inventor： 荆建芬 ,  杨春晓

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: A chemical-mechanical polishing liquid for polishing polysilicon is disclosed, which comprises abrasive particles and water, and further comprises one or more kind of oxidizing agent. Under basic condition, the polishing liquid may significantly change removal rate of polysilicon, adjust selectivity ratio of polysilicon and SiO 2 , and obviously improve the planarization-efficiency of polysilicon and removal of polishing residues.

公开(公告)号：WO2008122204A1

公开(公告)日：2008-10-16

申请号：PCT/CN2008/000683

申请日：2008-04-03

Applicant: 安集微电子(上海)有限公司 ,  荆建芬 ,  杨春晓

Inventor： 荆建芬 ,  杨春晓

IPC: C09G1/02 ,  H01L21/302

CPC classification number: H01L21/3212 ,  C09G1/02

Abstract: The present invention provides a chemical mechanical polishing liquid for polycrystalline silicon, which contains polyol-type nonionic surfactant, guanidines compound, abrasive particles and water. The polishing liquid of the invention can polish polycrystalline silicon film better under basic conditions. Inter alia, the polyol-type nonionic surfactant can reduce evidently the removal rate of polycrystalline silicon without reducing the remove rate of silicon dioxide, thereby remarkably decreasing the selectivity ratio of polycrystalline silicon to silicon dioxide. Guanidines compound can be used to adjust the selectivity ratio of polycrystalline silicon to silicon dioxide, and it simultaneously has a function of adjusting pH. It allows the polishing liquid of the invention adding none of common pH regulator, and reduces the contamination of metal ions and environmental pollution greatly.

公开(公告)号：WO2007009364A1

公开(公告)日：2007-01-25

申请号：PCT/CN2006/001701

申请日：2006-07-17

Applicant: 安集微电子(上海)有限公司 ,  俞昌 ,  肖正龙 ,  杨春晓 ,  荆建芬 ,  徐春

Inventor： 俞昌 ,  肖正龙 ,  杨春晓 ,  荆建芬 ,  徐春

IPC: C23G1/06 ,  C23G1/10 ,  C23G1/12 ,  C08L33/08 ,  C08L33/10 ,  C08L33/12

CPC classification number: C11D11/0029 ,  C11D3/0073 ,  C11D3/3757

Abstract: The present invention defines a washing solution which includes at least an anti corrosion agent. And also the invention defines the use of the washing solution in washing the metal substrate. As comparing with the traditional ones, the washing solution of the invention can notably reduce the corrosion of metal material and has some advantages as following: (1) reducing the defect of metal surface remarkably; (2) improving the flatness of metal surface evidently; (3) improving the quality of articles and increasing the rate of yield in the production; (4) improving washing efficiency.