公开(公告)号：WO2014140863A2

公开(公告)日：2014-09-18

申请号：PCT/IB2014001034

申请日：2014-03-12

Applicant: AIR LIQUIDE ,  GATINEAU JULIEN ,  KO CHANGHEE ,  YOKOTA JIRO ,  LANSALOT-MATRAS CLÉMENT

Inventor： GATINEAU JULIEN ,  KO CHANGHEE ,  YOKOTA JIRO ,  LANSALOT-MATRAS CLÉMENT

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/02175 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228

Abstract: Bis(alkylimido)-bis(alkylamido)molybdenum compounds, their synthesis, and their use for the deposition of molybdenum-containing films are disclosed.

Abstract translation: 公开了双（烷基酰氨基） - 双（烷基酰氨基）钼化合物，它们的合成及其用于沉积含钼膜的用途。

公开(公告)号：WO2017115147A3

公开(公告)日：2017-08-10

申请号：PCT/IB2016001962

申请日：2016-12-16

Applicant: AIR LIQUIDE

Inventor： GIRARD JEAN-MARC ,  KO CHANGHEE ,  OSHCHEPKOV IVAN ,  YANAGITA KAZUTAKA ,  OKUBO SHINGO ,  NODA NAOTO ,  GATINEAU JULIEN

IPC: H01L21/316 ,  C23C16/455 ,  H01L21/31

CPC classification number: H01L21/0228 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02236 ,  H01L21/02247 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262

Abstract: Disclosed are methods of depositing silicon-containing films on substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Abstract translation: 公开了通过使用五取代乙硅烷如五卤代乙硅烷或五（二甲基氨基）乙硅烷的气相沉积工艺在衬底上沉积含硅膜的方法。

公开(公告)号：WO2012074511A2

公开(公告)日：2012-06-07

申请号：PCT/US2010058340

申请日：2010-11-30

Applicant: AIR LIQUIDE ,  KO CHANGHEE ,  GATINEAU JULIEN ,  DUSSARRAT CHRISTIAN

Inventor： KO CHANGHEE ,  GATINEAU JULIEN ,  DUSSARRAT CHRISTIAN

IPC: H01L21/205 ,  H01L21/31

CPC classification number: C23C16/30 ,  H01L21/02175 ,  H01L21/02271

Abstract: Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF2, at temperatures ranging from about 25C to about 300°C, preferably from about 50°C to about 250°C, and more preferably from about 100°C to about 200°C.

Abstract translation: 公开了在约25℃至约300℃，优选约50℃的温度范围内的温度和/或等离子体增强CVD，ALD和/或脉冲CVD工艺以沉积碱土金属氟化物基膜，例如MgF 2 约250℃，更优选约100℃至约200℃。