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    CVD BASED SPACER DEPOSITION WITH ZERO LOADING
    2.
    发明申请
    CVD BASED SPACER DEPOSITION WITH ZERO LOADING 审中-公开

    公开(公告)号：WO2020028065A1

    公开(公告)日：2020-02-06

    申请号：PCT/US2019/042497

    申请日：2019-07-18

    Applicant: APPLIED MATERIALS, INC.

    Inventor： CHENG, Rui ,  JANAKIRAMAN, Karthik ,  HUANG, Zubin ,  KEDLAYA, Diwakar N.

    IPC: H01L21/02 ,  H01L21/768

    Abstract: Embodiments of the present disclosure relate to deposition methods for dielectric layers with zero pattern loading characteristics. In one embodiment, the method includes depositing a conformal dielectric layer on the substrate having a patterned area and a blanket area by exposing the substrate to a deposition precursor and a tuning gas simultaneously without the presence of plasma in a process chamber, wherein the deposition precursor is reacted to form a chemical reaction by-product, and the chemical reaction by-product is the same as the tuning gas, and wherein the deposition precursor and the tuning gas are provided at an amount that is more than required for the deposition reaction to occur at the patterned area and the blanket area.

    METHOD OF PROCESSING A SUBSTRATE
    4.
    发明申请
    METHOD OF PROCESSING A SUBSTRATE 审中-公开

    公开(公告)号：WO2020168084A1

    公开(公告)日：2020-08-20

    申请号：PCT/US2020/018120

    申请日：2020-02-13

    Applicant: APPLIED MATERIALS, INC.

    Inventor： NARAYANAN, Rajaram ,  RUAN, Fang ,  KULSHRESHTHA, Prashant Kumar ,  KEDLAYA, Diwakar N. ,  JANAKIRAMAN, Karthik

    IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/683 ,  C23C16/32 ,  H01J37/32 ,  C23C16/505

    Abstract: Embodiments of the present disclosure generally relate to a method of processing a substrate. The method includes exposing the substrate positioned in a processing volume of a processing chamber to a hydrocarbon-containing gas mixture, exposing the substrate to a boron-containing gas mixture, and generating a radio frequency (RF) plasma in the processing volume to deposit a boron-carbon film on the substrate. The hydrocarbon-containing gas mixture and the boron-containing gas mixture are flowed into the processing volume at a precursor ratio of (boron-containing gas mixture/((boron-containing gas mixture)+hydrocarbon-containing gas mixture) of about 0.38 to about 0.85. The boron-carbon hardmask film provides high modulus, etch selectivity, and stress for high aspect-ratio features (e.g., 10:1 or above) and smaller dimension devices (e.g., 7 nm node or below).

    FIBER ARRAY LINE GENERATOR
    6.
    发明申请
    FIBER ARRAY LINE GENERATOR 审中-公开
    光纤阵列发生器

    公开(公告)号：WO2015088778A1

    公开(公告)日：2015-06-18

    申请号：PCT/US2014/067431

    申请日：2014-11-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： HOLMGREN, Douglas E. ,  HOWELLS, Samuel C. ,  HUNTER, Aaron Muir ,  MOFFITT, Theodore P. ,  KEDLAYA, Diwakar N.

    IPC: H01S3/0941 ,  H01L21/00 ,  H01S3/10

    CPC classification number: B23K26/0648 ,  B23K26/0608 ,  B23K26/0738 ,  H01L21/67115

    Abstract: Embodiments described herein relate to the rapid thermal processing of substrates. A fiber coupled laser diode array is provided in an optical system configured to generate a uniform irradiance pattern on the surface of a substrate. A plurality of individually controllable laser diodes are optically coupled via a plurality of fibers to one or more lenses. The fiber coupled laser diode array generates a Gaussian radiation profile which is defocused by the lenses to generate a uniform intensity image. In one embodiment, a field stop is disposed within the optical system.

    Abstract translation: 本文所述的实施例涉及衬底的快速热处理。 在配置成在衬底的表面上产生均匀辐照度图案的光学系统中提供光纤耦合激光二极管阵列。 多个可单独控制的激光二极管通过多个光纤光耦合到一个或多个透镜。 光纤耦合的激光二极管阵列产生高斯辐射分布，其由透镜散焦以产生均匀的强度图像。 在一个实施例中，场停止件设置在光学系统内。

    FILM FORMATION VIA PULSED RF PLASMA
    8.
    发明申请
    FILM FORMATION VIA PULSED RF PLASMA 审中-公开

    公开(公告)号：WO2020167611A1

    公开(公告)日：2020-08-20

    申请号：PCT/US2020/017284

    申请日：2020-02-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： NITTALA, Krishna ,  KEDLAYA, Diwakar N. ,  JANAKIRAMAN, Karthik ,  YANG, Yi

    IPC: C23C16/505 ,  C23C16/30 ,  C23C16/44 ,  C23C16/458

    Abstract: Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.

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