公开(公告)号：WO2007103399A2

公开(公告)日：2007-09-13

申请号：PCT/US2007005737

申请日：2007-03-07

Applicant: APPLIED MATERIALS INC

Inventor： CHEN HUI ,  TULSHIBAGWALE SHESHRAJ L ,  TAKAHASHI HIDESHI ,  TOMITA TOSHIKAZU ,  FUJIKAWA TAKASHI

IPC: A46B7/10

CPC classification number: H04L1/0045 ,  H01L21/67046 ,  H03M13/09 ,  H03M13/3738 ,  H03M13/3776 ,  H03M13/41 ,  H04L1/0059 ,  H04L1/20 ,  H04L1/208

Abstract: System and methods for reducing false alarm in the presence of random signals are disclosed. Various embodiments are operable to receive via a data interface a data block having at least one frame, normalize soft bits of the data block and re-encode decoder output bits of the data block, calculate a normalized correlation metric from the normalized soft bits and re-encoded bits of the data block, compare the normalized correlation metric to a threshold, and reject the data block when the normalized correlation metric is below the threshold.

Abstract translation: 公开了用于在存在随机信号的情况下减少假警报的系统和方法。 各种实施例可操作以经由数据接口接收具有至少一个帧的数据块，对数据块的软比特进行归一化并重新编码数据块的解码器输出位，从归一化的软比特计算归一化的相关度量 数据块的编码比特，将归一化相关度量与阈值进行比较，并且当归一化相关度量低于阈值时，拒绝数据块。

公开(公告)号：WO2006124472A3

公开(公告)日：2007-03-08

申请号：PCT/US2006018130

申请日：2006-05-11

Applicant: APPLIED MATERIALS INC ,  YUDOVSKY JOSEPH ,  CHEN HUI

Inventor： YUDOVSKY JOSEPH ,  CHEN HUI

IPC: H01L21/00

CPC classification number: H01L21/67028 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/67742 ,  H01L21/67751

Abstract: A substrate handler is provided. In one embodiment, the substrate handler includes a first and second carriage coupled to a rail. A first robot having at least two grippers is attached to the first carrier. A second robot having at least one gripper is coupled to the second carriage. The first carriage is independently positionable along the rail relative to the second carriage. As each carriage has a separate actuator, the movements of the first and second robot are decoupled, thereby allowing increased throughput. The substrate handler is particularly suitable for using in a planarization system having an integrated substrate cleaner.

Abstract translation: 提供衬底处理器。 在一个实施例中，衬底处理器包括联接到轨道的第一和第二托架。 具有至少两个夹持器的第一机器人附接到第一托架。 具有至少一个夹持器的第二机器人联接到第二托架。 第一托架可相对于第二托架沿轨道独立定位。 当每个滑架具有单独的致动器时，第一和第二机器人的运动被解耦，从而允许增加的产量。 衬底处理器特别适合于在具有集成衬底清洁器的平面化系统中使用。

公开(公告)号：WO0219408A3

公开(公告)日：2002-06-13

申请号：PCT/US0126314

申请日：2001-08-22

Applicant: APPLIED MATERIALS INC

Inventor： HSIEH CHANG LIN ,  CHEN HUI ,  YUAN JIE ,  YE YAN

IPC: H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/31116

Abstract: We have discovered a method for plasma etching a carbon-containing silicon oxide film which provides excellent etch profile control, a rapid etch rate of the carbon/containing silicon oxide film, and high selectivity for etching the carbon-containing silicon oxide film preferentially to an overlying photoresist masking material. Then the method of the inention is used, a highter carbon content in the carbon/containing silicon oxide film results in a faster etch rate, at least up to ta carbon content of 20 atomic percent. In particular, the carbon-containgin silicon oxide film results in a faster etch rate, at least up to a carbon content of 20 atomic percent. In particular, the carbon containg silicon oxide film is plama etched using a plama generated from source gas comprising NH3 and CxFy. It is necessary to achieve the proper balance between the relative amounts of NH3 and CxFy in the plasma source gas in order to provide a balance between etch by/product polymer deposition and removal on various surfaces of the substrate being etched. The NH3 gas functions to "clean up" deposited polzmer on the photoresist surface, on the etched surface, and on process chamber surfaces. The atomic ratio of carbon: nitrogen in the plasma source gas typically ranges from about 0.3:1 to about 3:1. We have found that C2F6 and C4F8 provide excellent etch rates during etching of carbon-containing silicon oxide films.

Abstract translation: 我们已经发现了一种用于等离子体蚀刻含碳氧化硅膜的方法，该方法提供了优异的蚀刻分布控制，含碳/氧化硅膜的快速蚀刻速率和用于将含碳氧化硅膜优先蚀刻成 覆盖光刻胶掩模材料。 然后使用该方法，含碳氧化硅膜中较高的碳含量导致较快的蚀刻速率，至少达到20原子百分比的ta含碳量。 特别地，含碳的氧化硅膜导致更快的蚀刻速率，至少达到20原子百分比的碳含量。 具体而言，使用由包含NH 3和C x F y的源气体产生的气泡对含碳的氧化硅膜进行蚀刻。 有必要在等离子体源气体中的NH 3和C x F y的相对量之间达到适当的平衡，以便在蚀刻/产物聚合物沉积和去除被蚀刻衬底的各种表面之间提供平衡。 NH3气体的作用是“清理”光致抗蚀剂表面，蚀刻表面上和工艺室表面上沉积的抛光剂。 等离子体源气体中碳：氮的原子比通常在约0.3:1至约3:1的范围内。 我们发现C2F6和C4F8在含碳氧化硅膜的蚀刻过程中提供了优异的蚀刻速率。

公开(公告)号：WO2010039409A3

公开(公告)日：2010-05-20

申请号：PCT/US2009056679

申请日：2009-09-11

Applicant: APPLIED MATERIALS INC ,  CHEN HUI ,  D AMBRA ALLEN L

Inventor： CHEN HUI ,  D AMBRA ALLEN L

IPC: H01L21/304 ,  H01L21/302

CPC classification number: H01L21/67051

Abstract: Embodiments of the present invention generally relate to an apparatus and a method for cleaning a semiconductor substrate after a polishing process. Particularly, embodiments of the present invention relates to an apparatus and method for cleaning a substrate using pressurized fluid. One embodiment of the present invention comprises two rollers to support and rotate a substrate in a substantially vertical orientation, a pressure wheel to apply a force to engage the substrate with the two rollers, and a swinging nozzle configured to dispense a pressurized fluid towards the substrate.

Abstract translation: 本发明的实施例一般涉及在抛光工艺之后清洁半导体衬底的设备和方法。 具体而言，本发明的实施例涉及使用加压流体来清洁衬底的装置和方法。 本发明的一个实施例包括：两个辊子，用于以基本上垂直的方向支撑和旋转衬底;压力轮，用于施加力以使衬底与两个辊子接合;以及摆动喷嘴，其被构造成朝衬底分配加压流体 。

公开(公告)号：WO2010039410A2

公开(公告)日：2010-04-08

申请号：PCT/US2009056686

申请日：2009-09-11

Applicant: APPLIED MATERIALS INC ,  CHEN HUI ,  YUDOVSKY JOSEPH ,  D AMBRA ALLEN L

Inventor： CHEN HUI ,  YUDOVSKY JOSEPH ,  D AMBRA ALLEN L

IPC: H01L21/304

CPC classification number: B08B1/04 ,  H01L21/67046 ,  H01L21/67219

Abstract: Embodiments of the present invention relates to an apparatus and method for cleaning a substrate using scrubber brushes. One embodiment of the present invention provides a substrate cleaner comprises two scrubber brush assemblies movably disposed in a processing volume. The two scrubber brush assemblies are configured to contact and clean opposite surfaces of a substrate disposed in the processing volume. The substrate cleaner also comprises a positioning assembly configured to simultaneously adjust positions of the two scrubber brush assemblies, wherein the positioning assembly makes substantially the same amount of adjustment to the first and second scrubber brush assemblies in mirror symmetry.

Abstract translation: 本发明的实施例涉及使用洗涤器刷清洁衬底的装置和方法。 本发明的一个实施例提供了一种基板清洁器，包括可移动地设置在处理体积中的两个洗涤刷组件。 两个洗涤器刷组件被配置为接触并清洁设置在处理体积中的基板的相对表面。 衬底清洁器还包括配置成同时调节两个洗涤器刷组件的位置的定位组件，其中定位组件以镜面对称的方式对第一和第二洗刷器刷组件进行基本相同的调节量。

公开(公告)号：WO2009158378A2

公开(公告)日：2009-12-30

申请号：PCT/US2009048390

申请日：2009-06-24

Applicant: APPLIED MATERIALS INC ,  MARTINEZ RICARDO ,  D AMBRA ALLEN L ,  BLANK ADRIAN ,  BRITCHER THUY ,  CHEN HUI

Inventor： MARTINEZ RICARDO ,  D AMBRA ALLEN L ,  BLANK ADRIAN ,  BRITCHER THUY ,  CHEN HUI

IPC: H01L21/304 ,  H01L21/302

CPC classification number: B08B3/12 ,  H01L21/67051

Abstract: Embodiments described herein relate to semiconductor device manufacturing, and more particularly to a vertically oriented dual megasonic module for simultaneously cleaning multiple substrates. In one embodiment, an apparatus for cleaning multiple substrates is provided. The apparatus comprises an outer tank for collecting overflow processing fluid comprising at least one sidewall and a bottom. A first inner module adapted to contain a processing fluid is positioned partially within the outer tank. The first inner module comprises one or more roller assemblies to hold a substrate in a substantially vertical orientation. A second inner module adapted to contain a processing fluid is positioned partially within the outer tank. The second inner module comprises one or more roller assemblies adapted to hold a substrate in a substantially vertical orientation. Each inner module contains a transducer adapted to direct vibrational energy through the processing fluid toward the substrates.

Abstract translation: 本文所述的实施例涉及半导体器件制造，更具体地，涉及用于同时清洁多个基板的垂直取向的双兆赫模块。 在一个实施例中，提供了一种用于清洁多个基板的装置。 该装置包括用于收集包括至少一个侧壁和底部的溢流处理流体的外槽。 适于容纳处理流体的第一内部模块部分地位于外部容器内。 第一内部模块包括一个或多个辊组件以将基板保持在基本垂直的方向。 适于容纳处理流体的第二内部模块部分地位于外部罐中。 第二内部模块包括一个或多个辊组件，其适于将基板保持在基本垂直的方向。 每个内部模块包含适于将振动能量通过处理流体引向基板的换能器。

公开(公告)号：WO2009114664A3

公开(公告)日：2009-11-05

申请号：PCT/US2009036906

申请日：2009-03-12

Applicant: APPLIED MATERIALS INC ,  CHEN HUI

Inventor： CHEN HUI

IPC: B25B33/00 ,  B25B27/20 ,  B25B27/28 ,  F16L23/02 ,  F16L23/18

CPC classification number: B23P19/084 ,  B25B27/0028 ,  Y10T29/49963 ,  Y10T29/53878 ,  Y10T29/53909 ,  Y10T29/53943

Abstract: A tool is provided to facilitate the assembly of a seal ring. The tool comprises an elongated body and a flange projecting radially from the elongated body. A first portion of the tool is configured to receive the placement of a seal ring and a retainer cap thereon. The retainer cap may carry attachment elements, such as screws, used to secure the retainer cap on the housing. To mount the seal ring, the tool is inserted through a shaft hole of the housing to clamp the seal ring and the retainer cap between the housing and a flange of the tool. The attachment elements then are tightened to fix the retainer cap on the housing, which secures the seal ring sandwiched between the retainer cap and the housing. After the assembly of the seal ring is completed, the tool may then be slidably removed.

Abstract translation: 提供了一种工具来促进密封环的组装。 该工具包括细长主体和从细长主体径向突出的凸缘。 工具的第一部分构造成接收其上的密封环和保持盖的放置。 保持帽可以承载用于将保持帽固定在壳体上的附接元件，例如螺钉。 为了安装密封环，工具通过壳体的轴孔插入，以将密封环和保持帽夹紧在壳体和工具的法兰之间。 然后拧紧附接元件以将保持器盖固定在壳体上，其将密封环固定在保持器盖和壳体之间。 在完成密封环的组装之后，可以滑动地移除工具。

公开(公告)号：WO2007145904A3

公开(公告)日：2008-08-14

申请号：PCT/US2007013170

申请日：2007-06-04

Applicant: APPLIED MATERIALS INC

Inventor： OLGADO DONALD J K ,  NANGOY ROY C ,  TULSHIBAGWALE SHESHRAJ L ,  CHEN HUI ,  SHIN HO SEON

IPC: A46B13/00 ,  B08B3/10 ,  B08B7/04 ,  B24B51/00

CPC classification number: H01L21/67046 ,  B08B1/04 ,  B08B11/02

Abstract: In one or more aspects, an apparatus (100) for cleaning a substrate includes (i) a plurality of rollers (102a-d) adapted to contact and support the substrate (S) in a horizontal orientation, and (2) at least one brush ( 106) adapted to contact a major surface of the substrate (S) while the substrate (S) is supported by the plurality of rollers (102a-d) to clean the major surface of the substrate (S) At least one of the plurality of rollers (l02a-d) is adapted to move between an opened position allowing the substrate (S) to be loaded onto or unloaded from the plurality of rollers (l O2a-d) and a closed position in which the substrate (S) is supported by the plurality of rollers (102a-d) Numerous other aspects are provided

Abstract translation: 在一个或多个方面中，一种用于清洁衬底的设备（100）包括（i）适于以水平方向接触和支撑衬底（S）的多个辊（102a-d），和（2）至少一个 所述刷子（106）适于接触所述基底（S）的主表面，同时所述基底（S）由所述多个辊（102a-d）支撑以清洁所述基底（S）的主表面。至少一个 多个辊子（102a-d）适于在允许衬底（S）被装载到多个辊子（10Aa-d）上或从多个辊子上卸载的打开位置之间移动，并且其中衬底（S） 由多个辊支撑（102a-d）提供了许多其它方面

公开(公告)号：WO2007103399A3

公开(公告)日：2007-12-13

申请号：PCT/US2007005737

申请日：2007-03-07

Applicant: APPLIED MATERIALS INC

Inventor： CHEN HUI ,  TULSHIBAGWALE SHESHRAJ L ,  TAKAHASHI HIDESHI ,  TOMITA TOSHIKAZU ,  FUJIKAWA TAKASHI

IPC: A46B7/02 ,  A46B5/02 ,  A46B17/02

CPC classification number: H04L1/0045 ,  H01L21/67046 ,  H03M13/09 ,  H03M13/3738 ,  H03M13/3776 ,  H03M13/41 ,  H04L1/0059 ,  H04L1/20 ,  H04L1/208

Abstract: System and methods for reducing false alarm in the presence of random signals are disclosed. Various embodiments are operable to receive via a data interface a data block having at least one frame, normalize soft bits of the data block and re-encode decoder output bits of the data block, calculate a normalized correlation metric from the normalized soft bits and re-encoded bits of the data block, compare the normalized correlation metric to a threshold, and reject the data block when the normalized correlation metric is below the threshold.

Abstract translation: 公开了用于在存在随机信号的情况下减少假警报的系统和方法。 各种实施例可操作以经由数据接口接收具有至少一个帧的数据块，对数据块的软比特进行归一化并重新编码数据块的解码器输出位，从归一化的软比特计算归一化的相关度量 数据块的编码比特，将归一化相关度量与阈值进行比较，并且当归一化相关度量低于阈值时，拒绝数据块。

公开(公告)号：WO0211193A2

公开(公告)日：2002-02-07

申请号：PCT/US0123992

申请日：2001-07-31

Applicant: APPLIED MATERIALS INC

Inventor： HSIEH CHANG LIN ,  CHEN HUI ,  YUAN JIE ,  YE YAN

IPC: G03F7/40 ,  G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  B08B7/00

CPC classification number: H01L21/31138 ,  G03F7/427

Abstract: In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor susbtrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH3. A substrate voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlaying layer of an organic dielectric.

Abstract translation: 通常，本公开涉及用于从半导体结构上的位置去除光致抗蚀剂的方法，其中其存在是不期望的。 在一个实施例中，公开了一种从光刻胶图形化之后不希望的区域去除残余光致抗蚀剂材料的方法。 在另一个实施例中，从半导体芯片表面剥离未对准的图案化光刻胶。 特别地，该方法包括将半导体结构暴露于由包含NH 3的源气体产生的等离子体。 为了产生各向异性蚀刻，在两种方法中都采用基板电压。 在除尘实施例中，维持图案化光致抗蚀剂的临界尺寸。 在光致抗蚀剂剥离实施例中，去除图案化的光致抗蚀剂，而不会有害地影响有机电介质的部分暴露的底层。