公开(公告)号：WO2017045135A1

公开(公告)日：2017-03-23

申请号：PCT/CN2015/089658

申请日：2015-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： XIE, Dini ,  WANG, Meili ,  XU, Xianbin ,  YAN, Liangchen ,  ZHANG, Xiaojin

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/473 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/7869

Abstract: A method for forming a thin film transistor array substrate (110) comprises forming an active layer (140) using a zinc target under an environment of oxygen and nitrogen in a sputtering chamber, and forming a source/drain buffer layer (151/152) on the active layer (140) using the zinc target by a sputtering process in the sputtering chamber under an environment containing one of oxygen and nitrogen. A thin film transistor array substrate (110) comprises an active layer (140), a source/drain buffer layer (151/152) on and in contact with the active layer (140), wherein the active layer (140) is made of oxynitride compound of zinc, and the source/drain buffer layer (151/152) is made of one of an oxide and a nitride of zinc. A display device comprising the thin film transistor array substrate (110) is also provided.

Abstract translation: 一种形成薄膜晶体管阵列基板（110）的方法包括：在溅射室内，在氧和氮环境下使用锌靶形成有源层（140），形成源/漏缓冲层（151/152） 在包含氧和氮的环境的环境中，通过溅射工艺在溅射室中使用锌靶在有源层（140）上。 薄膜晶体管阵列基板（110）包括有源层（140），与有源层（140）接触并与其接触的源极/漏极缓冲层（151/152），其中有源层（140）由 锌的氮氧化物化合物和源极/漏极缓冲层（151/152）由锌的氧化物和氮化物之一构成。 还提供了包括薄膜晶体管阵列基板（110）的显示装置。

公开(公告)号：WO2019028670A1

公开(公告)日：2019-02-14

申请号：PCT/CN2017/096409

申请日：2017-08-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： XIE, Dini ,  LI, Wei

IPC: G02F1/136

CPC classification number: G02F1/136 ,  G02F2001/13606 ,  G02F2202/22

Abstract: An array substrate has a plurality of thin film transistors (100), a display apparatus, and a method of fabricating an array substrate. The array substrate includes a base substrate (10); a semiconductor layer (400) on the base substrate (10) and including a plurality of active layers (40) respectively for the plurality of thin film transistors (100); and an electrostatic discharging layer (300) electrically connected to the semiconductor layer (400) and configured to discharge electrostatic charge in the semiconductor layer (400).

公开(公告)号：WO2017185717A1

公开(公告)日：2017-11-02

申请号：PCT/CN2016/106048

申请日：2016-11-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： ZHOU, Tingting ,  ZHANG, Bin ,  QI, Yonglian ,  XIE, Dini ,  JIANG, Yong

IPC: C08G77/18 ,  G03F7/004 ,  G03F7/033 ,  G03F7/038

Abstract: Provided are a light-diffusion powder, a quantum-dot-containing photoresist, and a quantum-dot- containing color film, and their preparation methods. The light- diffusion powder is obtained from an alkoxysilane having a chemical structure represented by formula (I), where R 1 includes a C1~C50 alkyl group, and R' includes one or more of an alkyl and a substituted alkyl group.

Abstract translation: 本发明提供光扩散粉末，含量子点光致抗蚀剂和含量子点彩色膜及其制备方法。 光扩散粉末由具有由式（I）表示的化学结构的烷氧基硅烷获得，其中R 1包括C 1 -C 50烷基，并且R'包括烷基和芳基中的一种或多种 一个取代的烷基。