Abstract:
An RGB-Z sensor is implementable on a single IC chip. A beam splitter such as a hot mirror receives and separates incoming first and second spectral band optical energy from a target object into preferably RGB image components and preferably NIR Z components. The RGB image and Z components are detected by respective RGB and NIR pixel detector array regions, which output respective image data and Z data. The pixel size and array resolutions of these regions need not be equal, and both array regions may be formed on a common IC chip. A display using the image data can be augmented with Z data to help recognize a target object. The resultant structure combines optical efficiency of beam splitting with the simplicity of a single IC chip implementation. A method of using the single chip red, green, blue, distance (RGB-Z) sensor is also disclosed.
Abstract:
Rapid calibration of a TOF system uses a stationary target object and electrically introduces phase shift into the TOF system to emulate target object relocation. Relatively few parameters suffice to model a parameterized mathematical representation of the transfer function between measured phase and Z distance. The phase-vs-distance model is directly evaluated during actual run-time operation of the TOF system. Preferably modeling includes two components: electrical modeling of phase-vs-distance characteristics that depend upon electrical rather than geometric characteristics of the sensing system, and elliptical modeling that phase-vs- distance characteristics that depending upon geometric rather than electrical characteristics of the sensing system.
Abstract:
Dynamic range of a differential pixel is enhanced by injecting, synchronously or asynchronously, a fixed compensating offset (ΔV) into a differential signal capacitor whenever magnitude of the differential signal across the capacitor exceeds a predetermined value. The number (N) of ΔV offsets made is counted. Effective differential signal capacitor voltage V(t) = Vo + N-ΔV, where Vo is capacitor voltage. Differential pixel signal/noise ratio is increased by dynamically maximizing operational amplifier gain A G for each differential pixel.
Abstract translation:每当电容器两端的差分信号的大小超过预定值时,通过将固定的补偿偏移(ΔV)同步或异步地注入差分信号电容器来增强差分像素的动态范围。 对所做的ΔV偏移数(N)进行计数。 有效的差分信号电容电压V(t)= Vo + N-V,其中Vo是电容电压。 通过动态地最大化每个差分像素的运算放大器增益A SUB来提高差分像素信号/噪声比。
Abstract:
TOF and color sensing detector structures have x-axis spaced-apart y-axis extending finger-shaped gate structures with adjacent source collection regions. X- dimension structures are smaller than y-dimension structure and govern performance, characterized by high x-axis electric fields and rapid charge movement, contrasted with lower y-axis electric fields and slower charge movement. Preferably a potential barrier is implanted between adjacent gates and a bias gate is formed intermediate a gate and associated source region. Resultant detector structures can be operated at the more extreme gate voltages that are desirable for high performance.
Abstract:
Structures and methods for three-dimensional image (20) sensing using high frequency modulation includes CMOS-implementable sensor structures (200) using differential charge transfer, including such sensors (230) enabling rapid horizontal and slower vertical dimension local charge collection. Wavelength response of such sensors can be altered dynamically by varying gate potentials. Methods for producing such sensor structures on conventional CMOS fabrication facilities include use of "rich" instructions to command the fabrication process to optimize image sensor rather than digital or analog ICs. One detector structure has closely spaced-apart, elongated finger-like structures that rapidly collect charge in the spaced-apart direction and then move collected charge less rapidly in the elongated direction. Detector response is substantially independent of the collection rate in the elongated direction.
Abstract:
Structures and methods for three-dimensional image sensing using high frequency modulation includes CMOS-implementable sensor structures using differential charge transfer, including such sensors enabling rapid horizontal and slower vertical dimension local charge collection. Wavelength response of such sensors can be altered dynamically by varying gate potentials. Methods for producing such sensor structures on conventional CMOS fabrication facilities include use of "rich" instructions to command the fabrication process to optimize image sensor rather than digital or analog ICs. One detector structure has closely spaced-apart, elongated finger-like structures that rapidly collect charge in the spaced-apart direction and then move collected charge less rapidly in the elongated direction. Detector response is substantially independent of the collection rate in the elongated direction.
Abstract:
Effective differential dynamic range in a differential pixel detector is increased by avoiding saturation effects due to common mode contribution in optical energy to be detected. Photocurrent generated by each photodetector pair is directly integrated by an associated capacitor over an integration time T. Within time T, before either integrated capacitor voltage reaches Vsat for the photodetector, at least one of the capacitors is reset to a voltage such that the desired differential detector signal is still determinable. Reset may be generated externally or internally to the differential pixel detector.
Abstract:
Effective differential dynamic range and common mode rejection in a differential pixel detector are enhanced by capturing and isolating differential detector charge output before using common mode reset to avoid detector saturation due to common mode components of optical energy to be detected. Differential charge is stored into an integration capacitor associated with an operational amplifier coupled to receive as input the differential detector outputs. Common mode reset is achieved by resetting storage capacitors coupled to the outputs of the differential detector at least once within an integration time T before storage potential exceeds a saturation voltage Vsat for the photodetector.
Abstract:
An amplitude modulated continuous wave range imaging device has a signaling device configured to emit an intensity modulated illumination signal. An image sensor is configured to capture a plurality of images of a reflection of the modulated illumination signal. The captured images include intensity and/or phase components for a plurality of pixels of the image sensor. Each pixel includes a first modulation terminal having a first capacitive component. A first driver is configured to charge a first set of modulation terminals of the plurality of pixels. A second driver is configured to charge a second set of modulation terminals of the plurality of pixels. A charge transfer circuit is connected between the first set of modulation terminals and the second set of modulation terminals. The charge transfer circuit is configured to transfer charge between the first set of modulation terminals and the second set of modulation terminals.
Abstract:
A light-generated input interface is provided using a combination of components that include a projector and a sensor. The projector displays an image corresponding to an input device. The sensor can be used to detect selection of input based on contact by a user-controlled object with displayed regions of the projected input device. An intersection of a projection area and an active sensor area on a surface where the input device is to be displayed is used to set a dimension of an image of the input device.