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公开(公告)号:WO2018215524A1
公开(公告)日:2018-11-29
申请号:PCT/EP2018/063475
申请日:2018-05-23
Applicant: DANFOSS SILICON POWER GMBH
Inventor: PAULSEN, Lars , ULRICH, Holger , OSTERWALD, Frank , RUDZKI, Jacek , BECKER, Martin , DITTMANN, Dirk
IPC: H01L21/67
CPC classification number: H01L24/75 , H01L2224/751 , H01L2224/75305 , H01L2224/75316 , H01L2224/75317 , H01L2224/75318 , H01L2224/7532 , H01L2224/75983 , H01L2224/83065 , H01L2224/83093 , H01L2224/83201 , H01L2224/8384 , H01L2924/00012
Abstract: An assembly for producing an electronic assembly by sintering, comprising a lower sintering tool (30) having a recess (32) for receiving an electronic assembly (20) to be produced by sintering, an upper sintering tool (40) for exerting a pressure directed against the lower sintering tool, and a protective film (50) arranged between the lower sintering tool and the upper sintering tool covering at least the recess of the lower sintering tool, characterized in that the protective film is perforated (52) to allow the feeding of a protective gas to the surface of the electronic assembly (20).
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公开(公告)号:WO2020178143A1
公开(公告)日:2020-09-10
申请号:PCT/EP2020/055181
申请日:2020-02-27
Applicant: DANFOSS SILICON POWER GMBH
Inventor: BECKER, Martin , DITTMANN, Dirk
Abstract: A method for manufacturing an electronic component (34, 34', 34") by a pressure-assisted low-temperature sintering process, by using a pressure sintering device (2) having an upper die (4) and a lower die (6) is disclosed. The upper die (4) and/or the lower die (6) is provided with a first pressure pad (10, 10", 10"', 210, 210", 210"'). The method comprises the following steps: placing a first component (26) on a first sintering layer (24) provided on the top layer (22) of a first substrate (20+12+22), intended to form a first electronic component (34); placing, in a level above or below the to-be-formed first electronic component (34), at least a second component (26', 26") on a second sintering layer (24", 24"") provided on a top layer (22', 22") of a second substrate (20'+12'+22', 20" + 12"+22"), intended to form a second electronic component (34', 34"); placing a second pressure pad (10', 10", 10'", 10"", 10''''', 210', 210", 210'", 210"", 210''''') between the to-be-formed first electronic component (34) and second electronic component (34', 34"); and joining the first component (26) and the top layer (22) of the first substrate (20+12+22) by means of the first sintering layer (24) to form the first electronic component (34) as well as joining the second component (26', 26") and the top layer (22', 22") of the second substrate (20' + 12'+22', 20" + 12"+22") by means of the second sintering layer (24", 24"") to form the second electronic component (34', 34"), by pressing the upper die (4) and the lower die (6) towards each other, wherein the sintering device (2) is simultaneously heated. The method may further comprise a step of covering the first component (26) with a first protective foil (18) arranged to be brought into engagement with the first pressure pad (10, 210). The method may also comprise a step of covering the second component (26', 26") with a second protective foil (18', 18"). One or more of the pressure pads (10, 10', 10", 10'", 10"", 10''''') may be deformable pressure pads (210, 210', 210", 210'", 210"", 210'''''), which may comprise a fluid contained in an enclosure. A plate (36, 36') may be arranged between adjacent electronic components (34, 34', 34"), wherein the plate (36) may be provided with heating elements (32') or the plate (36, 36') may be heated by induction means (232). The first electronic component (34, 34', 34") or the second electronic component (34, 34', 34") may comprise a baseplate (28, 28', 28"), which may function as the additional pressure pad. The first and second electronic components (34, 34', 34") may be double-sided electronic components comprising an insulation (12, 12', 12") having a top surface provided with a first sintering layer (24, 24", 24'") onto which a first component (26, 26", 26"') is placed and having an underside surface provided with a second sintering layer (24', 24'") onto which a second component (26', 26'") is arranged.
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