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    METHOD OF ASSEMBLING A SEMICONDUCTOR POWER MODULE COMPONENT, SEMICONDUCTOR POWER MODULE WITH SUCH A MODULE COMPONENT HAVING COMPONENT PARTS SOLDERED TOGETHER AND COMPONENT PARTS SINTERED TOGETHER, AS WELL AS MANUFACTURING SYSTEM THEREFOR
    1.
    发明申请
    METHOD OF ASSEMBLING A SEMICONDUCTOR POWER MODULE COMPONENT, SEMICONDUCTOR POWER MODULE WITH SUCH A MODULE COMPONENT HAVING COMPONENT PARTS SOLDERED TOGETHER AND COMPONENT PARTS SINTERED TOGETHER, AS WELL AS MANUFACTURING SYSTEM THEREFOR 审中-公开

    公开(公告)号：WO2019185391A1

    公开(公告)日：2019-10-03

    申请号：PCT/EP2019/056730

    申请日：2019-03-18

    申请人： DANFOSS SILICON POWER GMBH

    发明人： OSTERWALD, Frank ,  ULRICH, Holger

    IPC分类号： H01L23/373 ,  H01L23/367 ,  H01L21/603 ,  H01L21/48 ,  H01L21/67 ,  H01L23/31 ,  H01L23/049 ,  H01L23/053 ,  H01L23/24 ,  H01L23/46

    摘要： A method of assembling a semiconductor power module component (30) and a manufacturing system comprising such a semiconductor power module component and a pressing apparatus (20) for manufacturing a semiconductor power module component are described. The semiconductor power module component (30) comprises at least a first element (1) (e.g. a semiconductor chip), a second element (2) (e.g. a substrate, such a DCB substrate) and a third element (3) (e.g. a base plate) arranged in a stack (10). The first element (1) and the second element (2) are joined by sintering in a sintering area (4) and the second element (2) and the third element (3) are joined by soldering in a soldering area (6). The sintering and the soldering are simultaneously executed, wherein the soldering area (6) is heated to a temperature of soldering and the sintering area (4) is heated to a temperature of sintering, the temperature of soldering and the temperature of sintering being harmonized to each other. Pressure is being applied to the stack (10), comprising the at least one soldering area (6) and the at least one sintering area (4) with stabilizing means (7) such as bumps on a surface of the second element (2) or third element (3), solid spacer means incorporated in a solder perform (8) or a wire mesh incorporated in a solder preform (8) being arranged in the soldering area (6). Additional component parts (14, 15) may be sintered onto the first element and/or the second element simultaneously with the sintering and the soldering of the stack (10). The pressure may be applied by a soft cushion-like element (23) surrounding component parts (1, 2, 3, 14, 15) of the module (30).

    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND THE CORRESPONDING DEVICE
    2.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND THE CORRESPONDING DEVICE 审中-公开
    制造半导体器件和相应器件的方法

    公开(公告)号：WO2017029082A1

    公开(公告)日：2017-02-23

    申请号：PCT/EP2016/067792

    申请日：2016-07-26

    申请人： DANFOSS SILICON POWER GMBH

    发明人： OSTERWALD, Frank ,  BECKER, Martin ,  ULRICH, Holger ,  EISELE, Ronald ,  RUDZKI, Jacek

    IPC分类号： H01L23/492

    CPC分类号： H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/48491 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/9221 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014

    摘要： A method for manufacturing semiconductor chips (2, 3) having arranged thereon metallic shaped bodies (6), having the following steps: arranging a plurality of metallic shaped bodies (6) on a processed semiconductor wafer while forming a layer arranged between the semiconductor wafer and the metallic shaped bodies (6), exhibiting a first connection material (4) and a second connection material (5), and processing the first connection material (4) for connecting the metallic shaped bodies (6) to the semiconductor wafer without processing the second connecting material (5), wherein the semiconductor chips (2, 3) are separated either prior to arranging the metallic shaped bodies (6) on the semiconductor wafer or after processing the first connection material (4).

    摘要翻译： 一种在其上配置有金属成形体（6）的半导体芯片（2,3）的制造方法，具有以下步骤：将多个金属体（6）配置在经处理的半导体晶片上，同时形成配置在半导体晶片 和呈现第一连接材料（4）和第二连接材料（5）的金属成形体（6），并且处理用于将金属成形体（6）连接到半导体晶片的第一连接材料（4），而不加工 第二连接材料（5），其中半导体芯片（2,3）在将金属成形体（6）布置在半导体晶片上之后或在处理第一连接材料（4）之后被分离。

    A FLOW DISTRIBUTOR
    4.
    发明申请
    A FLOW DISTRIBUTOR 审中-公开
    流量分配器

    公开(公告)号：WO2011127931A1

    公开(公告)日：2011-10-20

    申请号：PCT/DK2011/000025

    申请日：2011-04-08

    申请人： DANFOSS SILICON POWER GMBH ,  OLESEN, Klaus ,  PAULSEN, Lars ,  DANIEL, Andre ,  OSTERWALD, Frank

    发明人： OLESEN, Klaus ,  PAULSEN, Lars ,  DANIEL, Andre ,  OSTERWALD, Frank

    IPC分类号： H01L23/473

    CPC分类号： H01L23/473 ,  H01L2924/0002 ,  Y10T137/85938 ,  H01L2924/00

    摘要： A flow distributor (1) for distributing a flow of fluid through a cooling body, the flow distributor (1) comprising : - an inlet manifold (10), - an outlet manifold (15), - one or more flow cells, each being arranged to fluidly interconnect the inlet manifold (10) and the outlet manifold (15), each flow cell comprising a cell inlet (13) in fluid communication with the inlet manifold (10), a cell outlet (14) in fluid communication with the outlet manifold (15), and a flow channel for guiding a flow of fluid from the cell inlet (13) to the cell outlet (14), wherein the flow distributor (1) is formed within a solid layer (2) which is bonded directly to an insulating layer (3) to be cooled.

    摘要翻译： 一种用于分配流体流过冷却体的流量分配器（1），所述流量分配器（1）包括： - 入口歧管（10）， - 出口歧管（15）， - 一个或多个流动池 布置成流体地互连入口歧管（10）和出口歧管（15），每个流动池包括与入口歧管（10）流体连通的电池入口（13），与所述入口歧管流体连通的电池出口（14） 出口歧管（15）和用于将流体从细胞入口（13）引导到细胞出口（14）的流动通道，其中流动分配器（1）形成在粘合的固体层（2）内 直接连接到待冷却的绝缘层（3）上。

    METHOD FOR PRODUCING AN ELECTRONIC ASSEMBLY BY SIMULTANEOUSLY MOUNTING AT LEAST ONE FIRST ELECTRONIC COMPONENT BY PRESSURE SINTERING AND AT LEAST ONE SECOND ELECTRONIC COMPONENT BY PRESSURELESS SINTERING
    5.
    发明申请
    METHOD FOR PRODUCING AN ELECTRONIC ASSEMBLY BY SIMULTANEOUSLY MOUNTING AT LEAST ONE FIRST ELECTRONIC COMPONENT BY PRESSURE SINTERING AND AT LEAST ONE SECOND ELECTRONIC COMPONENT BY PRESSURELESS SINTERING 审中-公开

    公开(公告)号：WO2023021120A1

    公开(公告)日：2023-02-23

    申请号：PCT/EP2022/073032

    申请日：2022-08-18

    申请人： DANFOSS SILICON POWER GMBH

    发明人： ULRICH, Holger ,  OSTERWALD, Frank ,  RUDZKI, Jacek

    IPC分类号： H01L21/603 ,  H01L21/60 ,  H01L21/98 ,  H05K3/32 ,  H01L21/48 ,  H01L25/16 ,  H01L23/498

    摘要： Method for producing an electronic assembly (100) comprising a circuit carrier (10), at least one first electronic component (30) and at least one second component (40) comprises connecting the first component (30) to the circuit carrier (10) using a first sinter compound (20) by sintering under application of a pressure which acts locally on the first component (30), the first sinter compound (20) and the circuit carrier (10) in the region of the first component (30), whilst simultaneously connecting the second component (40) to the circuit carrier (10) by pressureless sintering using a second sinter compound (20). The at least one first component (30) may be an active component, such as a semiconductor, a power semiconductor, an IGBT transistor, a MOSFET transistor or a diode. The at least one second component (40) may be a passive component such as a surface mounted device (SMD) or may be selected from thermal sensors, current sensors, inductors, capacitors, resistors, wires, heavy wires and ribbons. The locally acting pressure in the region of the first component (30) may be applied uniaxially to the first component (30), the sinter compound (20) and the circuit carrier (10). The connection of the first electronic component (30) to the circuit carrier (10) via the first sinter compound (20) may be realized by the application of pressure to the first component (30) via an (upper) die (200) of a sintering device under the simultaneous effect of temperature. A connection of the second component (40) to the circuit carrier (10) by pressureless sintering using the second sinter compound (20) may likewise be simultaneously realized under the effect of temperature. The pressing die (200) may have a recess in the position in which the second component (40) is located, so that the pressing die (200) receives the second component (40) without exerting pressure thereon. Alternatively, the assembly (100) may be designed in such a way that the second component (40) is arranged altogether lower or has a smaller overall height than the first component (30), so that the die (200) cannot come into contact with the second component (40). The sinter compound (20) may be a dried sinter paste or a sinter pad. The sinter compound (20) may be affixed to the first or second component (30, 40) or to the circuit carrier (10) before the connection of the first or second component (30, 40) to the circuit carrier (10). A separating foil (210) may be arranged between the assembly (100) to be sintered and the pressing die (200), wherein, to prevent the pressing die (200) from being able to exert pressure on the second component (40) via the separating foil (210), the separating foil (210) may be provided with a recess in the region of the second component (40), which leaves the second component (40) uncovered. Thanks to the pressure sintering, the first electronic component (30) may be reliably installed despite the high variable loads and thanks to the pressureless sintering, the second component (40) may be installed without breaking.

    METHOD OF FORMING A COHESIVE CONNECTION BETWEEN A SEMICONDUCTOR WITH AN ALUMINIUM COATED CONTACT SURFACE AND A SHAPED METAL BODY, AS WELL AS A SEMICONDUCTOR MODULE COMPRISING AND A SHAPED METAL BODY COHESIVELY ATTACHED TO A SEMICONDUCTOR
    6.
    发明申请
    METHOD OF FORMING A COHESIVE CONNECTION BETWEEN A SEMICONDUCTOR WITH AN ALUMINIUM COATED CONTACT SURFACE AND A SHAPED METAL BODY, AS WELL AS A SEMICONDUCTOR MODULE COMPRISING AND A SHAPED METAL BODY COHESIVELY ATTACHED TO A SEMICONDUCTOR 审中-公开

    公开(公告)号：WO2021052758A1

    公开(公告)日：2021-03-25

    申请号：PCT/EP2020/074460

    申请日：2020-09-02

    申请人： DANFOSS SILICON POWER GMBH

    发明人： RUDZKI, Jacek ,  LÄMMEL, Jan ,  BEHRENDT, Stefan ,  EISELE, Ronald ,  OSTERWALD, Frank

    IPC分类号： H01L21/60 ,  H01L23/485

    摘要： A method of forming a cohesive connection between a semiconductor (20) comprising an aluminium coated contact surface (30) and a shaped metal body (50) comprises the following steps: placing a preform on the contact surface of the semiconductor (20), wherein the preform comprises a dried sinter paste (40) enclosing a metallic structure (60) designed as a metallic grid or wavy metallic structure, placing the shaped metal body (50) on the preform, and processing the assembled components to form the cohesive connection, wherein the processing comprises the step of at least partially removing an oxide layer on the surface of the shaped metal body (50) and/or the contact surface of the semiconductor (20) by moving the metallic structure (60) in contact with the shaped metal body (50) and/or the semiconductor (20) relative to these. The movement of the metallic structure (60) may be at an ultrasonic frequency. The processing may comprise the movement of the shaped metal body (50) relative to the semiconductor (20). The shaped metal body (50) may comprise aluminium or an aluminium alloy, or alternatively copper or a copper alloy. The processing may comprise the application of pressure and/ or temperature. The melting point of the metallic structure (60) may be higher than the melting point of the sinter paste (40). The preform is preferably low temperature melting, with the melting point of the preform being

    POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE
    10.
    发明申请
    POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE 审中-公开
    具有短路故障模式的功率半导体模块

    公开(公告)号：WO2016062589A1

    公开(公告)日：2016-04-28

    申请号：PCT/EP2015/073745

    申请日：2015-10-14

    申请人： DANFOSS SILICON POWER GMBH

    发明人： LUTZ, Josef ,  EISELE, Ronald ,  RUDZKI, Jacek ,  BECKER, Martin ,  KOCK, Mathias ,  OSTERWALD, Frank

    IPC分类号： H01L23/62 ,  H01L23/00

    CPC分类号： H01L23/62 ,  H01L24/04 ,  H01L24/07 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/85423 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/00015 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2224/05599

    摘要： A description is given of a power semiconductor module (10) which can be transferred from a normal operating mode to an explosion-free robust short-circuit failure mode. Said power semiconductor module (10) comprises a power semiconductor (1) having metallizations (3) which form potential areas and are separated by insulations and passivations on the top side (2) of said power semiconductor. Furthermore, an electrically conductive connecting layer is provided, on which at least one metal shaped body (4) which has a low lateral electrical resistance and is significantly thicker than the connecting layer is arranged, said at least one metal shaped body being applied by sintering of the connecting layer such that said metal shaped body is cohesively connected to the respective potential area. The metal shaped body (4) is embodied and designed with means for laterally homogenizing a current flowing through it in such a way that a lateral current flow component (5) is maintained until this module switches off in order to avoid an explosion, wherein the metal shaped body (4) has connections (6) having high-current capability. A transition from the operating mode to the robust failure mode then takes place in an explosion-free manner by virtue of the fact that the connections (6) are contact-connected and dimensioned in such a way that in the case of overload currents of greater than a multiple of the rated current of the power semiconductor (1), the operating mode changes to the short-circuit failure mode with connections (6) remaining on the metal shaped body (4) in an explosion-free manner without the formation of arcs.

    摘要翻译： 给出了可以从正常操作模式转换到无爆炸的鲁棒短路故障模式的功率半导体模块（10）的描述。 所述功率半导体模块（10）包括具有金属化（3）的功率半导体（1），其形成潜在区域并且在所述功率半导体的顶侧（2）上由绝缘和钝化分开。 此外，设置导电连接层，在该导电连接层上设置有至少一个具有低横向电阻并且比连接层明显更厚的金属体（4），所述至少一个金属体通过烧结 的连接层，使得所述金属体与内部的电位区域粘合地连接。 金属体（4）被实施和设计成具有横向均匀化流过其中的电流的装置，使得横向电流流动部件（5）保持直到该模块关闭以避免爆炸，其中 金属体（4）具有大电流能力的连接（6）。 由于连接（6）的接触连接和尺寸设计使得在过载电流较大的情况下，以无爆炸的方式发生从工作模式到稳定故障模式的转变 超过功率半导体（1）的额定电流的倍数，则操作模式改变为短路故障模式，其中连接（6）以无爆炸的方式保留在金属体（4）上，而不形成 弧。