公开(公告)号：WO2004061910A3

公开(公告)日：2004-09-02

申请号：PCT/US0336372

申请日：2003-11-12

Applicant: INTEL CORP

Inventor： HARELAND SCOTT ,  LINDERT NICK ,  ARGHAVANI REZA ,  CHAU ROBERT

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01L21/31111 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/31053 ,  H01L21/3115

Abstract: A method for anisotropically and selectively removing a dielectric thin film layer (102, 103) from a substrate layer (100) is disclosed, wherein the dielectric layer is subjected to ion implantation (122) prior to wet etching. This method may be applied adjacent to a structure such as a gate electrode within a microelectronic structure to prevent undercutting of the dielectric material to be preserved between the gate electrode and the substrate layer, as may happen with more isotropic etching techniques.

Abstract translation: 公开了一种用于从基底层（100）各向异性地选择性地去除电介质薄膜层（102,103）的方法，其中介电层在湿蚀刻之前进行离子注入（122）。 该方法可以与微电子结构内的诸如栅电极的结构相邻地施加，以防止在栅电极和衬底层之间保留的电介质材料的底切，这可能由于更多的各向同性蚀刻技术而发生。

公开(公告)号：WO2004017398A3

公开(公告)日：2004-06-10

申请号：PCT/US0324105

申请日：2003-07-31

Applicant: INTEL CORP

Inventor： JIN BEEN-YIH ,  ARGHAVANI REZA ,  CHAU ROBERT

IPC: H01L21/20 ,  H01L21/762 ,  H01L21/316

CPC classification number: H01L21/02488 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/76256

Abstract: A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is formed on the insulator layer to form a relatively thin, relatively uniform semiconductor on insulator apparatus. In embodiments of the method and apparatus, energy band characteristics may be used to facilitate the extraction of the well-region minority carriers.

Abstract translation: 一种用于制造具有改善的载流子迁移率的相对薄的相对均匀的半导体层的方法和装置。 在一个实施例中，在半导体衬底上形成晶格匹配的绝缘体层，并且在绝缘体层上形成晶格匹配的半导体层，以形成相对薄的，相对均匀的绝缘体上的半导体器件。 在该方法和装置的实施例中，可以使用能带特征来促进提取良好区域的少数载流子。

公开(公告)号：WO2004017393A3

公开(公告)日：2004-04-29

申请号：PCT/US0324108

申请日：2003-07-31

Applicant: INTEL CORP

Inventor： ARGHAVANI REZA ,  STOKLEY PATRICIA ,  CHAU ROBERT

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L29/4983 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/28247 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method and apparatus of preventing lateral oxidation through gate dielectrics that are highly permeable to oxygen diffusion, such as high-k gate dielectrics. According to one embodiment of the invention, a gate structure is formed on a substrate, the gate structure having an oxygen-permeable gate dielectric. An oxygen diffusion barrier is then formed on the sidewalls of the gate structure to prevent oxygen from diffusing laterally into the oxygen-permeable gate dielectric, thus preventing oxidation to the substrate underneath the gate dielectric or to the electrically conductive gate electrode overlying the gate dielectric.

Abstract translation: 一种防止横向氧化的方法和装置，其通过对氧扩散高度可渗透的栅极电介质，例如高k栅极电介质。 根据本发明的一个实施例，栅极结构形成在衬底上，栅极结构具有透氧栅极电介质。 然后在栅极结构的侧壁上形成氧扩散阻挡层，以防止氧横向扩散到透氧栅介质中，从而防止氧化到栅极电介质下方的衬底或覆盖栅极电介质的导电栅电极。