公开(公告)号：WO2012082336A1

公开(公告)日：2012-06-21

申请号：PCT/US2011/061965

申请日：2011-11-22

Applicant: LAM RESEARCH CORPORATION ,  FU, Qian ,  YU, Hyun-Yong ,  QIN, Ce

Inventor： FU, Qian ,  YU, Hyun-Yong ,  QIN, Ce

IPC: H01L27/08 ,  G03F1/00

CPC classification number: H01L21/31144 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/32139 ,  H01L27/11551 ,  H01L27/11556

Abstract: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed. The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.

Abstract translation: 提供了一种在基板中形成台阶结构的方法。 在衬底上形成有机掩模。 在有机掩模上形成具有顶层和侧壁层的硬掩模。 去除硬掩模的侧壁层，同时留下硬掩模的顶层。 有机面罩被修剪。 衬底被蚀刻。 重复多次形成硬掩模，去除侧壁层，修整有机掩模和蚀刻基板。

公开(公告)号：WO2019147583A1

公开(公告)日：2019-08-01

申请号：PCT/US2019/014580

申请日：2019-01-22

Applicant: LAM RESEARCH CORPORATION

Inventor： ABATCHEV, Mirzafer ,  FU, Qian ,  YAMAGUCHI, Yoko ,  EPPLER, Aaron

IPC: H01L21/02 ,  H01L21/311 ,  H05H1/46 ,  H01J37/32 ,  C23C16/455

Abstract: Methods and apparatuses for spacer profile control using atomic layer deposition (ALD) in multi-patterning processes are described herein. A silicon oxide spacer is deposited over a patterned core material and a target layer of a substrate in a multi-patterning scheme. A first thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a first oxidation condition that includes an oxidation time, a plasma power, and a substrate temperature. A second thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a second oxidation condition, where the second oxidation condition is different than the first oxidation condition by one or more parameters. After etching the patterned core material, a resulting profile of the silicon oxide spacer is dependent at least in part on the first and second oxidation conditions.

公开(公告)号：WO2018075284A1

公开(公告)日：2018-04-26

申请号：PCT/US2017/055800

申请日：2017-10-09

Applicant: LAM RESEARCH CORPORATION

Inventor： TAN, Zongkui ,  XIANG, Hua ,  HU, Wenbing ,  XU, Qing ,  FU, Qian

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C01B21/068 ,  C01B33/113 ,  H01J37/321 ,  H01J2237/3343 ,  H01L21/02019 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L27/11575

Abstract: A method for ion-assisted etching a stack of alternating silicon oxide and silicon nitride layers in an etch chamber is provided. An etch gas comprising a fluorine component, helium, and a fluorohydrocarbon or hydrocarbon is flowed into the etch chamber. The gas is formed into an in-situ plasma in the etch chamber. A bias of about 10 to about 100 volts is provided to accelerate helium ions to the stack and activate a surface of the stack to form an activated surface for ion-assisted etching, wherein the in-situ plasma etches the activated surface of the stack.

Abstract translation: 提供了一种用于在蚀刻室中对交替的氧化硅和氮化硅层的叠层进行离子辅助蚀刻的方法。 包含氟组分，氦气和氟代烃或烃的蚀刻气体流入蚀刻室。 气体在蚀刻室中形成原位等离子体。 提供约10到约100伏的偏压以将氦离子加速到叠层并激活叠层的表面以形成用于离子辅助蚀刻的激活表面，其中原位等离子体蚀刻叠层的激活表面。

公开(公告)号：WO2019108844A1

公开(公告)日：2019-06-06

申请号：PCT/US2018/063141

申请日：2018-11-29

Applicant: LAM RESEARCH CORPORATION

Inventor： QIN, Ce ,  TAN, Zhongkui ,  FU, Qian ,  LEE, Sam Do

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/033 ,  H01L21/306 ,  H01L21/32

Abstract: A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiO 2 layer and etching a SiN layer. Etching a SiO 2 layer comprises flowing a SiO 2 etching gas into the plasma processing chamber, wherein the SiO 2 etching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SF 6 and NF 3 , generating a plasma from the SiO 2 etching gas, providing a bias, and stopping the SiO 2 layer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.

公开(公告)号：WO2018136121A1

公开(公告)日：2018-07-26

申请号：PCT/US2017/057728

申请日：2017-10-20

Applicant: LAM RESEARCH CORPORATION

Inventor： TAN, Zhongkui ,  ZHANG, Yiting ,  FU, Qian ,  XU, Qing ,  WU, Ying ,  SRIRAMAN, Saravanapriyan ,  PATERSON, Alex

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46 ,  H01L21/67

Abstract: A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.

公开(公告)号：WO2011094038A2

公开(公告)日：2011-08-04

申请号：PCT/US2011/020283

申请日：2011-01-05

Applicant: LAM RESEARCH CORPORATION ,  MIKHAYLICHENKO, Katrina ,  SYOMIN, Denis ,  FU, Qian ,  GALE, Glenn W. ,  LIU, Shenjian ,  WILCOXSON, Mark H.

Inventor： MIKHAYLICHENKO, Katrina ,  SYOMIN, Denis ,  FU, Qian ,  GALE, Glenn W. ,  LIU, Shenjian ,  WILCOXSON, Mark H.

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/31111

Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract translation: 提供了一种用于处理用于制造半导体器件的晶片的方法。 该方法可以包括在晶片上形成高纵横比特征，然后进行湿法处理和干燥。 在干燥过程中，会发生图案坍塌。 可以修复该图案塌陷以允许晶片的额外处理。 在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻会破坏在图案塌陷期间可能形成的键。

公开(公告)号：WO2008002760A1

公开(公告)日：2008-01-03

申请号：PCT/US2007/070795

申请日：2007-06-08

Applicant: LAM RESEARCH CORPORATION ,  FU, Qian ,  LIU, Shenjian ,  LEE, Linda, Fung-Ming

Inventor： FU, Qian ,  LIU, Shenjian ,  LEE, Linda, Fung-Ming

IPC: H01L45/00 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J2237/3341 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

Abstract: A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.

Abstract translation: 提供了一种形成装置的方法。 提供了相变层。 通过提供包含含溴化合物的蚀刻气体并从蚀刻气体形成等离子体来蚀刻相变层。 相变层是可以被电流加热然后冷却的材料，根据材料的冷却速度而形成非晶材料或结晶材料。 此外，无定形材料具有比结晶材料至少几倍的电阻。

公开(公告)号：WO2019236213A1

公开(公告)日：2019-12-12

申请号：PCT/US2019/029799

申请日：2019-04-30

Applicant: LAM RESEARCH CORPORATION

Inventor： ABATCHEV, Mirzafer ,  CHOE, Han Joo ,  KAMP, Tom A. ,  FU, Qian ,  BAE, In Deog ,  SHIM, Martin ,  YAMAGUCHI, Yoko ,  PADOVANI BLANCO, Jose Ivan

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/3065

Abstract: A method for patterning a stack having a patterned organic mask with a plurality of mask features including sidewalls and tops, a hardmask and an etch layer, wherein the patterned organic mask is positioned over the hardmask which is positioned over the etch layer is provided. An atomic layer deposition is deposited, wherein the depositing the atomic layer deposition controllably trims the plurality of mask features of the patterned organic mask. The atomic layer deposition is broken through. The hardmask is selectively etched with respect to the patterned organic mask, wherein the atomic layer deposition reduces faceting of the plurality of mask features of the patterned organic mask during the selective etching.

公开(公告)号：WO2009114244A2

公开(公告)日：2009-09-17

申请号：PCT/US2009/034418

申请日：2009-02-18

Applicant: LAM RESEARCH CORPORATION ,  CHENG, Shih-Yuan ,  LIU, Shenjian ,  HONG, Youn Gi ,  FU, Qian

Inventor： CHENG, Shih-Yuan ,  LIU, Shenjian ,  HONG, Youn Gi ,  FU, Qian

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01L21/0271 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/67069

Abstract: A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.

Abstract translation: 用于形成光致抗蚀剂掩模的方法可以包括：将紫外线（UV）产生气体提供至具有衬底的真空室;使UV产生气体电离以产生UV射线以照射衬底;以及 通过光刻胶掩模将特征蚀刻到衬底中。

公开(公告)号：WO2019217185A1

公开(公告)日：2019-11-14

申请号：PCT/US2019/030340

申请日：2019-05-02

Applicant: LAM RESEARCH CORPORATION

Inventor： JIN, Yansha ,  TAN, Zhongkui ,  KENT, Tyler ,  YAN, Haoquan ,  FU, Qian ,  CONTRERAS, Anthony

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: A method for performing a cleaning process in a processing chamber includes, without a substrate arranged on a substrate support of the processing chamber, supplying reactant gases in a side gas flow via side tuning holes of a gas distribution device to effect deposition of a coating on an edge ring of the substrate support. The side gas flow targets an outer region of the processing chamber above the edge ring, and the reactant gases are supplied at a first flow rate. The method further includes, while supplying the reactant gases via the side tuning holes, supplying inert gases in a center gas flow via center holes of the gas distribution device. The inert gases are supplied at a second flow rate that is greater than the first flow rate.