公开(公告)号：WO2006095791A1

公开(公告)日：2006-09-14

申请号：PCT/JP2006/304519

申请日：2006-03-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  KATO, Kiyoshi ,  IZUMI, Konami ,  HAYAKAWA, Masahiko ,  KAMATA, Koichiro

Inventor： KATO, Kiyoshi ,  IZUMI, Konami ,  HAYAKAWA, Masahiko ,  KAMATA, Koichiro

IPC: G01R31/308 ,  H01L21/822 ,  H01L27/04

CPC classification number: G01R31/2822 ,  G01R31/2886 ,  G01R31/3025 ,  H01L27/13

Abstract: A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit.

Abstract translation: 提供了包括可以以高可靠性评估元件的特性的半导体层的基板及其评价方法。 包括本发明的半导体层的衬底具有一个闭环电路，其中天线线圈和半导体元件串联连接，并且形成有电路的区域的表面被绝缘膜覆盖。 通过使用这样的电路，可以进行非接触检查。 此外，环形振荡器可以代替闭环电路。

公开(公告)号：WO2015053378A1

公开(公告)日：2015-04-16

申请号：PCT/JP2014/077117

申请日：2014-10-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： YAMAZAKI, Shunpei ,  HOSAKA, Yasuharu ,  OBONAI, Toshimitsu ,  KOEZUKA, Junichi ,  SHIMA, Yukinori ,  HAYAKAWA, Masahiko ,  HAMOCHI, Takashi ,  HIRAISHI, Suzunosuke

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

Abstract translation: 为了抑制电特性的改变，并提高使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的栅电极，与栅电极重叠的氧化物半导体膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜的表面接触的栅极绝缘膜， 与氧化物半导体膜的表面的相对表面接触的保护膜和与氧化物半导体膜接触的一对电极。 在栅极绝缘膜或保护膜中，通过热处理释放的质荷比为m / z为17的气体的量比通过热处理释放的氮氧化物的量大。

公开(公告)号：WO2011027715A1

公开(公告)日：2011-03-10

申请号：PCT/JP2010/064544

申请日：2010-08-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  TSUBUKU, Masashi ,  YOSHITOMI, Shuhei ,  TUJI, Takahiro ,  HOSOBA, Miyuki ,  SAKATA, Junichiro ,  TOMATSU, Hiroyuki ,  HAYAKAWA, Masahiko

Inventor： TSUBUKU, Masashi ,  YOSHITOMI, Shuhei ,  TUJI, Takahiro ,  HOSOBA, Miyuki ,  SAKATA, Junichiro ,  TOMATSU, Hiroyuki ,  HAYAKAWA, Masahiko

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

Abstract translation: 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层，以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，并且在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。

公开(公告)号：WO2011089833A1

公开(公告)日：2011-07-28

申请号：PCT/JP2010/073660

申请日：2010-12-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  WAKIMOTO, Kenichi ,  HAYAKAWA, Masahiko

Inventor： WAKIMOTO, Kenichi ,  HAYAKAWA, Masahiko

IPC: G09G3/36 ,  G02F1/133 ,  G09G3/20

CPC classification number: G09G3/3648 ,  G09G3/3611 ,  G09G2300/0408 ,  G09G2330/022 ,  G09G2340/0435 ,  G09G2360/14 ,  H01L27/1225

Abstract: To reduce power consumption of a display device with the use of a simple structure and a simple operation. The display device includes an input device. Input of an image signal to a driver circuit is controlled in accordance with an image operation signal output from the input device. Specifically, input of image signals at the time when the input device is not operated is less frequent than that at the time when the input device is operated. Accordingly, display degradation (deterioration of display quality) caused when the display device is used can be prevented and power consumed when the display device is not used can be reduced.

Abstract translation: 使用简单的结构和简单的操作降低显示设备的功耗。 显示装置包括输入装置。 根据从输入装置输出的图像操作信号，控制对驱动电路的图像信号的输入。 具体地说，输入装置不工作时的图像信号的输入比输入装置运转时的输入频率低。 因此，可以防止在使用显示装置时引起的显示劣化（显示质量的劣化），并且可以减少当不使用显示装置时消耗的电力。

公开(公告)号：WO2011052368A1

公开(公告)日：2011-05-05

申请号：PCT/JP2010/067814

申请日：2010-10-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  HAYAKAWA, Masahiko

Inventor： HAYAKAWA, Masahiko

IPC: H03K17/687 ,  G02F1/133 ,  G09G3/20 ,  H03K17/00 ,  H03K19/094

CPC classification number: H01L27/1225 ,  G09G3/20 ,  G09G3/3674 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2300/043 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2310/0291 ,  G09G2330/021

Abstract: One object is, when a thin film transistor whose channel is formed using an amorphous semiconductor is used for a driver circuit formed using only n-channel transistors or p-channel transistors, to provide a driver circuit in which the threshold voltage is compensated in accordance with the degree of change in the threshold voltage. In the driver circuit which includes a unipolar transistor including a first gate and a second gate which are disposed above and below a semiconductor layer with insulating layers provided therebetween, a first signal for controlling switching of the transistor is inputted to the first gate, a second signal for controlling a threshold voltage of the transistor is inputted to the second gate, and the second signal is controlled in accordance with a value of current consumption including a current which flows between a source and a drain of the transistor.

Abstract translation: 一个目的是，当使用非晶半导体形成沟道的薄膜晶体管用于仅使用n沟道晶体管或p沟道晶体管形成的驱动电路时，提供其中阈值电压按照 具有阈值电压的变化程度。 在包括第一栅极和第二栅极的单极晶体管的驱动电路中，所述单极晶体管设置在其间具有绝缘层的半导体层的上方和下方，用于控制晶体管的开关的第一信号被输入到第一栅极，第二栅极输入第二栅极 用于控制晶体管的阈值电压的信号被输入到第二栅极，并且根据包括在晶体管的源极和漏极之间流动的电流的电流消耗值来控制第二信号。

公开(公告)号：WO2017187292A1

公开(公告)日：2017-11-02

申请号：PCT/IB2017/052189

申请日：2017-04-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： HAYAKAWA, Masahiko

IPC: G09G3/20 ,  G02F1/1368 ,  G06F3/044 ,  G09F9/00 ,  G09F9/46 ,  G09G3/3225 ,  G09G3/36 ,  H01L51/50 ,  H05B33/02 ,  H05B33/14 ,  G02F1/1335

CPC classification number: G06F3/0412 ,  G06F3/0416 ,  G06F3/044 ,  G06F2203/04112 ,  G09G3/2092 ,  G09G3/3233 ,  G09G3/3648 ,  G09G2300/046

Abstract: A display device is provided. An input/output device is provided. A data processing device is provided. A display method is provided. The display device includes a display panel and a control portion. The control portion has a function of receiving image data and control data, a function of generating first data on the basis of the image data, a function of generating second data on the basis of the image data, a function of detecting a contour portion from the image data, a function of generating third data in which the contour portion is emphasized, and a function of supplying the first to third data. The display panel has a function of receiving the first to third data and includes a pixel. The pixel includes a first display element and a second display element. The first display element has a function of displaying an image on the basis of the first data, and the second display element has a function of displaying an image on the basis of the second or third data.

Abstract translation: 提供了一种显示装置。 提供输入/输出设备。 提供了一种数据处理设备。 提供了一种显示方法。 显示装置包括显示面板和控制部分。 控制部分具有接收图像数据和控制数据的功能，基于图像数据生成第一数据的功能，基于图像数据生成第二数据的功能，从轮廓部分检测轮廓部分的功能 图像数据，生成轮廓部分被强调的第三数据的功能以及提供第一至第三数据的功能。 显示面板具有接收第一至第三数据的功能并且包括像素。 像素包括第一显示元件和第二显示元件。 第一显示元件具有基于第一数据显示图像的功能，并且第二显示元件具有基于第二或第三数据显示图像的功能。

公开(公告)号：WO2014185480A1

公开(公告)日：2014-11-20

申请号：PCT/JP2014/062900

申请日：2014-05-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： YAMAZAKI, Shunpei ,  MIYAKE, Hiroyuki ,  OKAZAKI, Kenichi ,  HAYAKAWA, Masahiko ,  MATSUDA, Shinpei

IPC: H01L29/786 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L29/41 ,  H01L29/423 ,  H01L29/49 ,  H01L51/50 ,  H05B33/14

CPC classification number: H01L27/1225 ,  G02F1/134309 ,  G02F1/1368 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.

Abstract translation: 提供了一种半导体器件，其包括氧化物半导体，并且其中抑制了由于栅极BT应力而形成的寄生沟道。 此外，提供了包括具有优异电特性的晶体管的半导体器件。 半导体器件包括具有双栅极结构的晶体管，其中氧化物半导体膜设置在第一栅电极和第二栅电极之间; 在所述氧化物半导体膜和所述第一栅电极之间以及所述氧化物半导体膜和所述第二栅电极之间设置栅绝缘膜; 并且在晶体管的沟道宽度方向上，第一或第二栅电极与氧化物半导体膜与第一或第二栅极之间的栅极绝缘膜面对氧化物半导体膜的侧面。

公开(公告)号：WO2011090087A1

公开(公告)日：2011-07-28

申请号：PCT/JP2011/050902

申请日：2011-01-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  WAKIMOTO, Kenichi ,  HAYAKAWA, Masahiko

Inventor： WAKIMOTO, Kenichi ,  HAYAKAWA, Masahiko

IPC: G09G3/36 ,  G02F1/133 ,  G02F1/1368 ,  G09G3/20

CPC classification number: G09G3/3648 ,  G09G3/3655 ,  G09G2320/10 ,  G09G2330/021 ,  G09G2340/02 ,  G09G2340/0435

Abstract: A display method suitable for an image provided by a digital data file and/or a display method of a display device in which the image quality and power consumption are adjusted in accordance with the state of the display device or at user's request to display an image. The image is displayed on the display device in which a plurality of pixels having a pixel electrode connected to a switching element whose off-state current is reduced, using the image provided by the digital data file and data which is provided by the digital data file and is correlated to an operation of the display device.

Abstract translation: 适用于由数字数据文件提供的图像和/或显示装置的显示方法的显示方法，其中根据显示装置的状态或用户显示图像的请求来调整图像质量和功耗 。 使用由数字数据文件提供的图像和由数字数据文件提供的数据，在显示装置上显示图像，其中具有连接到关闭状态电流的开关元件的像素电极的多个像素 并且与显示装置的操作相关。

公开(公告)号：WO2014196550A1

公开(公告)日：2014-12-11

申请号：PCT/JP2014/064799

申请日：2014-05-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： YAMAZAKI, Shunpei ,  MIYAKE, Hiroyuki ,  TOYOTAKA, Kouhei ,  HAYAKAWA, Masahiko ,  MATSUBAYASHI, Daisuke ,  MATSUDA, Shinpei

IPC: G02F1/1368 ,  G02F1/1345 ,  H01L29/786

CPC classification number: G02F1/134309 ,  G02F1/133345 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor.

Abstract translation: 以下半导体器件提供高可靠性和较窄的帧宽度。 半导体器件包括驱动电路和像素部分。 驱动电路具有包括第一栅极和第二栅极的第一晶体管，其中夹在其间的半导体膜彼此电连接，第二晶体管与第一晶体管电连接。 像素部分包括第三晶体管，液晶元件和电容器。 液晶元件包括与第三晶体管电连接的第一透明导电膜，第二导电膜和液晶层。 电容器包括第一导电膜，第三透明导电膜和氮化物绝缘膜。 氮化物绝缘膜位于第一透明导电膜和第三透明导电膜之间，位于第一晶体管的半导体膜和第二栅极之间。

公开(公告)号：WO2011132555A1

公开(公告)日：2011-10-27

申请号：PCT/JP2011/058951

申请日：2011-04-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ,  HAYAKAWA, Masahiko ,  OKANO, Shinya

Inventor： HAYAKAWA, Masahiko ,  OKANO, Shinya

IPC: G09G3/36 ,  G02F1/133 ,  G09G3/20 ,  H02M3/00

CPC classification number: G09G3/3696 ,  G09G2330/021

Abstract: A display device in which power consumed in an image holding period is suppressed. The display device includes a liquid crystal display panel which is driven by power supplied from a converter or a backup circuit. A fixed potential may be supplied and a capacitor may be charged with the use of the converter in a writing operation where a load is large, and the fixed potential may be preferentially supplied from the capacitor without using the converter in an image holding period when the load is small.

Abstract translation: 抑制图像保持期间消耗的电力的显示装置。 显示装置包括由从转换器或备用电路提供的电力驱动的液晶显示面板。 可以提供固定电位，并且可以在负载大的写入操作中使用转换器对电容器进行充电，并且可以在图像保持期间在不使用转换器的情况下从电容器优先地提供固定电位， 负载小