公开(公告)号：WO2006062880A3

公开(公告)日：2009-06-04

申请号：PCT/US2005043866

申请日：2005-12-05

Applicant: SENSOR ELECTRONIC TECH INC ,  GASKA REMIGIJUS ,  ZHANG JIANPING ,  SHUR MICHAEL

Inventor： GASKA REMIGIJUS ,  ZHANG JIANPING ,  SHUR MICHAEL

IPC: H01L33/06 ,  H01L33/32

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/105 ,  H01S5/2009 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/34333 ,  H01S5/34346

Abstract: An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.

Abstract translation: 提供了一种改进的基于氮化物的发光异质结构。 氮化物系发光异质结构包括电子供给层和在其间设置有发光结构的空穴供给层。 光产生结构包括一组阻挡层，每个阻挡层具有梯度组成和一组量子阱，每个量子阱邻接至少一个势垒层。 诸如每个量子阱的厚度的其它特征可以被选择/并入到异质结构中以改善其特征中的一个或多个。 此外，包括渐变组合物的一个或多个附加层可以包含在发光结构外部的异质结构中。 渐变组分层在光生成结构中进入量子阱之前导致电子失去能量，这使得电子能够在量子阱中更有效地与空穴重新结合。

公开(公告)号：WO2007078349A2

公开(公告)日：2007-07-12

申请号：PCT/US2006034935

申请日：2006-09-07

Applicant: SENSOR ELECTRONIC TECH INC ,  BILENKO YURIY ,  GASKA REMIGIJUS ,  SHUR MICHAEL ,  SIMIN GRIGORY

Inventor： BILENKO YURIY ,  GASKA REMIGIJUS ,  SHUR MICHAEL ,  SIMIN GRIGORY

IPC: H05K1/16 ,  H05K3/30

CPC classification number: H01L23/62 ,  H01L25/167 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/4913 ,  Y10T29/49169 ,  Y10T29/53174 ,  H01L2924/00

Abstract: A solution for protecting an electronic device from an electrical surge using a mounting structure is provided. In particular, the mounting structure comprises a conductive material and is electrically connected to the protected electrical device. The conductive material and/or mounting structure can have one or more properties that prevent the mounting structure from adversely impacting operation of the electronic device during normal operation, but enables the mounting structure to provide an alternative electrical path during the electrical surge.

Abstract translation: 提供了一种使用安装结构来保护电子设备免受电涌的解决方案。 特别地，安装结构包括导电材料并且电连接到受保护的电气装置。 导电材料和/或安装结构可以具有防止安装结构在正常操作期间不利地影响电子设备的操作的一个或多个特性，但是使安装结构能够在电涌期间提供替代的电路径。

公开(公告)号：WO2007062369A3

公开(公告)日：2008-06-05

申请号：PCT/US2006061147

申请日：2006-11-21

Applicant: SENSOR ELECTRONIC TECH INC ,  SIMIN GRIGORY ,  SHUR MICHAEL ,  GASKA REMIGIJUS

Inventor： SIMIN GRIGORY ,  SHUR MICHAEL ,  GASKA REMIGIJUS

IPC: H01L29/93

CPC classification number: H01L29/93 ,  H01L27/0688 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/7787 ,  H01L29/94

Abstract: An improved solution for performing switching, routing, power limiting, and/or the like in a circuit, such as a radio frequency (RF) circuit, is provided. A semiconductor device that includes at least two electrodes, each of which forms a capacitor, such as a voltage-controlled variable capacitor, with a semiconductor channel of the device is used to perform the desired functionality in the RF circuit. The device includes electrodes that can provide high power RF functionality without the use of ohmic contacts or requiring annealin .

Abstract translation: 提供了一种用于在诸如射频（RF）电路的电路中执行切换，路由，功率限制等的改进的解决方案。 包括至少两个电极的半导体器件被用于在RF电路中执行期望的功能，每个电极形成电容器，例如具有该器件的半导体通道的电压控制的可变电容器。 该器件包括可以在不使用欧姆接触或需要退火的情况下提供高功率射频功能的电极。

公开(公告)号：WO2007087592A3

公开(公告)日：2008-04-10

申请号：PCT/US2007061030

申请日：2007-01-25

Applicant: SENSOR ELECTRONIC TECH INC ,  SHUR MICHAEL ,  GASKA REMIGIJUS

Inventor： SHUR MICHAEL ,  GASKA REMIGIJUS

IPC: H01L33/00

CPC classification number: H01S3/0933 ,  H01S3/094084 ,  H01S5/041 ,  H01S5/105 ,  H01S5/36

Abstract: Laser light generating solutions are provided that use one or more light emitting diodes to optically pump a laser light generating structure. The laser light generating structure can include organic or inorganic laser material. The light emitting diodes can be located on the same substrate as the laser light generating structure or on a separate substrate that is connected to the substrate with the laser light generating structure. Various other features can be included to enhance the optical pumping and/or enable electrical pumping of the active structure when it includes an inorganic laser material.

Abstract translation: 提供了使用一个或多个发光二极管来光学泵浦激光产生结构的激光产生解决方案。 激光产生结构可以包括有机或无机激光材料。 发光二极管可以位于与激光产生结构相同的衬底上，或者位于与激光产生结构连接到衬底的单独衬底上。 当包括无机激光材料时，可以包括各种其它特征以增强光学泵浦和/或使得有源结构的电泵浦。

公开(公告)号：WO2007089360A2

公开(公告)日：2007-08-09

申请号：PCT/US2006060464

申请日：2006-11-02

Applicant: SENSOR ELECTRONIC TECH INC ,  GASKA REMIGIJUS ,  SHUR MICHAEL ,  ZHANG JIANPING

Inventor： GASKA REMIGIJUS ,  SHUR MICHAEL ,  ZHANG JIANPING

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L33/06 ,  B82Y20/00

Abstract: A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons, holes, and/or electron and hole pairs within the light generating structure. A phonon engineering approach can be used in which a band structure of the potential well and/or light generating structure is designed to facilitate the emission of polar optical phonons by electrons entering the light generating structure. To this extent, a difference between an energy at a top of the potential well and an energy of a quantum well in the light generating structure can be resonant with an energy of a polar optical phonon in the light generating structure material. The energy of the quantum well can comprise an energy at the top of the quantum well, an electron ground state energy, and/or the like.

Abstract translation: 提供了一种发光异质结构和/或其中发光结构被包含在势阱内的器件。 势阱被配置为在发光结构内容纳电子，空穴和/或电子和空穴对。 可以使用声子工程方法，其中将潜在阱和/或光产生结构的带结构设计为便于通过进入发光结构的电子发射极性光学声子。 在这种程度上，在发光结构材料中，势阱的顶部的能量与光产生结构中的量子阱的能量之间的差可以与极性光学声子的能量共振。 量子阱的能量可以包括量子阱顶部的能量，电子基态能量和/或类似物质。

公开(公告)号：WO2014153313A3

公开(公告)日：2014-11-13

申请号：PCT/US2014030959

申请日：2014-03-18

Applicant: SENSOR ELECTRONIC TECH INC

Inventor： BETTLES TIMOTHY J ,  DOBRINSKY ALEXANDER ,  SHUR MICHAEL ,  GASKA REMIGIJUS

IPC: A61L2/10

CPC classification number: A61L2/10 ,  A61L2/00 ,  A61L9/00

Abstract: A solution in which an ultraviolet radiation source is mounted on a flexible substrate is provided. The flexible substrate is capable of having a deformation curvature of at least 0.1 inverse meters. The flexible substrate may be incorporated within an existing enclosure or included in the enclosure. The flexible substrate can be utilized as part of a solution for disinfecting one or more items located within the enclosure. In this case, while the items are within the enclosure, ultraviolent radiation is generated and directed at the items. Wiring for the ultraviolet radiation source can be embedded within the flexible substrate and the flexible substrate can have at least one of: a wave-guiding structure, an ultraviolet absorbing surface, or an ultraviolet reflective surface. A control system can be utilized to manage generation of the ultraviolet radiation within the enclosure.

Abstract translation: 提供了一种将紫外线辐射源安装在柔性基板上的解决方案。 柔性衬底能够具有至少0.1米的变形曲率。 柔性衬底可以结合在现有外壳内或包含在外壳内。 柔性衬底可以用作消毒位于外壳内的一个或多个物品的解决方案的一部分。 在这种情况下，当物品位于外壳内时，会产生超暴力辐射并将其引导至物品。 用于紫外线辐射源的接线可以嵌入在柔性基板内，并且柔性基板可以具有波导结构，紫外线吸收表面或紫外线反射表面中的至少一个。 可以利用控制系统来管理外壳内的紫外辐射的产生。

公开(公告)号：WO2012116353A8

公开(公告)日：2013-10-10

申请号：PCT/US2012026669

申请日：2012-02-25

Applicant: SENSOR ELECTRONIC TECH INC ,  SHUR MICHAEL ,  GASKA REMIGIJUS

Inventor： SHUR MICHAEL ,  GASKA REMIGIJUS

IPC: H01L33/04 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/12 ,  H01S5/0224 ,  H01S5/0422 ,  H01S5/3201 ,  H01S5/32341

Abstract: An improved light emitting heterostructure is provided. The heterorestructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region.

Abstract translation: 提供改进的发光异质结构。 异构结构包括具有一组阻挡层的有源区和一组量子阱，每个量子阱与势垒层相邻。 量子阱具有位于其中的δ掺杂的p型子层，这导致量子阱的带结构的变化。 这种改变可以减少量子阱中的极化的影响，这可以提供来自有源区域的改进的光发射。

公开(公告)号：WO2007103704A2

公开(公告)日：2007-09-13

申请号：PCT/US2007063030

申请日：2007-03-01

Applicant: SENSOR ELECTRONIC TECH INC ,  GASKA REMIGIJUS ,  BILENKO YURIY ,  SHUR MICHAEL

Inventor： GASKA REMIGIJUS ,  BILENKO YURIY ,  SHUR MICHAEL

IPC: A61L9/20 ,  A61L2/10

CPC classification number: A61L2/10 ,  A61L2/23

Abstract: A solution for suppressing organism growth using ultraviolet radiation generated by solid state ultraviolet radiation emitters, such as ultraviolet diodes is provided. The invention includes a connection structure that includes a plurality of solid state ultraviolet radiation emitters disposed thereon. Each of the plurality of solid state ultraviolet radiation emitters emits ultraviolet radiation having a wavelength less than or equal to four hundred nanometers to harm a target organism that may be present on a surface. In one embodiment, the connection structure comprises a two-dimensional mesh that may be placed adjacent an air filter, incorporated in a cover, and/or moved with respect to a surface, such as the interior of an air duct. In this manner, the invention can suppress and/or prevent the growth of organisms, such as biofilms and mold, in locations that are susceptible to such growth.

Abstract translation: 提供了一种使用紫外线二极管等固体紫外线辐射发射体产生的紫外线照射来抑制生物生长的方法。 本发明包括一种连接结构，其包括设置在其上的多个固态紫外线辐射发射器。 多个固态紫外线辐射发射体中的每一个发射波长小于或等于四百纳米的紫外线辐射，以损害可能存在于表面上的靶生物体。 在一个实施例中，连接结构包括二维网格，其可以放置在与空气过滤器相邻的地方，并入和/或相对于诸如空气管道的内部的表面移动。 以这种方式，本发明可以抑制和/或防止生物体如生物膜和霉菌在易受这种生长影响的位置中的生长。

公开(公告)号：WO2007095543A2

公开(公告)日：2007-08-23

申请号：PCT/US2007062073

申请日：2007-02-13

Applicant: SENSOR ELECTRONIC TECH INC ,  GASKA REMIGIJUS ,  SHUR MICHAEL ,  BILENKO YURIY

Inventor： GASKA REMIGIJUS ,  SHUR MICHAEL ,  BILENKO YURIY

CPC classification number: A61L2/10 ,  A61M16/04

Abstract: A solution for sterilizing one or more hollow components of a device, such as a medical device, is provided. Ultraviolet radiation having one or more predominant wavelength(s) and a sufficient dose is generated and directed to an interior side of the hollow component(s). The predominant wavelength(s) is/are selected to harm one or more target organisms that may be present on the interior side. The ultraviolet radiation can be delivered by a structure that is periodically inserted and retracted into the hollow component. The structure can be configured to provide additional cleaning capability, such as suction, for removing matter that may be present in the hollow component.

Abstract translation: 提供了用于对诸如医疗装置的装置的一个或多个中空部件进行灭菌的解决方案。 产生具有一个或多个主要波长和足够剂量的紫外线辐射并将其引导到中空部件的内侧。 选择主要波长以损害可能存在于内侧的一种或多种靶生物体。 紫外线辐射可以通过周期性地插入和缩回到中空部件中的结构传送。 该结构可以构造成提供额外的清洁能力，例如抽吸，用于去除可能存在于中空部件中的物质。

公开(公告)号：WO2014179523A3

公开(公告)日：2016-02-04

申请号：PCT/US2014036291

申请日：2014-05-01

Applicant: SENSOR ELECTRONIC TECH INC

Inventor： SHATALOV MAXIM S ,  YANG JINWEI ,  SUN WENHONG ,  JAIN RAKESH ,  SHUR MICHAEL ,  GASKA REMIGIJUS

IPC: H01L33/00 ,  H01L29/06

CPC classification number: H01L29/158 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/007 ,  H01L33/12

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

Abstract translation: 提供了诸如III族氮化物基半导体结构的半导体结构。 半导体结构包括含有半导体层的空腔。 含腔的半导体层可以具有大于两个单层和多个空腔的厚度。 空腔可以具有至少一纳米的特征尺寸和至少五纳米的特征分离。