公开(公告)号：WO2012138658A8

公开(公告)日：2012-12-13

申请号：PCT/US2012032002

申请日：2012-04-03

Applicant: UNIV FLORIDA ,  NANOHOLDINGS LLC ,  SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA K

Inventor： SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA K

IPC: H01L51/50

CPC classification number: H01L27/3227 ,  F21S9/037 ,  F21V33/006 ,  F21Y2105/00 ,  F21Y2115/15 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/035218 ,  H01L51/5271 ,  H01L2251/5323

Abstract: Embodiments of the subject invention relate to a method and apparatus for providing a apparatus that can function as a photovoltaic cell, for example during the day, and can provide solid state lighting, for example at night. The apparatus can therefore function as a lighting window. An embodiment can integrate an at least partially transparent one-side emitting OLED and a photovoltaic cell. The photovoltaic cell can be sensitive to infrared light, for example light having a wavelength greater than 1 µm. The apparatus can be arranged such that the one direction in which the OLED emits is toward the inside of a building or other structure and not out into the environment.

Abstract translation: 本主题发明的实施例涉及用于提供例如在白天可以用作光伏电池并且可以例如在夜间提供固态照明的设备的方法和装置。 该设备因此可以用作照明窗口。 一个实施例可以集成至少部分透明的单侧发光OLED和光伏电池。 光伏电池可以对红外光敏感，例如波长大于1μm的光。 该设备可以被布置成使得OLED发射的一个方向朝向建筑物或其他结构的内部而不是外部环境。

公开(公告)号：WO2014178923A3

公开(公告)日：2015-01-15

申请号：PCT/US2014012722

申请日：2014-01-23

Applicant: UNIV FLORIDA

Inventor： KIM DO YOUNG ,  SO FRANKY ,  LEE JAE WOONG

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14694 ,  H01L27/283 ,  H01L27/307

Abstract: An image sensor is constructed on a substrate that is a read-out transistor array with a multilayer array of infrared photodetectors formed thereon. The infrared photodetectors include a multiplicity of layers including an infrared transparent electrode distal to the substrate, a counter electrode directly contacting the substrate, and an infrared sensitizing layer that comprises a multiplicity of nanoparticles. The layers can be inorganic or organic materials. In addition to the electrodes and sensitizing layers, the multilayer stack can include a hole-blocking layer, an electron-blocking layer, and an anti-reflective layer. The infrared sensitizing layer can be PbS or PbSe quantum dots.

Abstract translation: 图像传感器构成在其上形成有红外光电检测器的多层阵列的读出晶体管阵列的基板上。 红外光电探测器包括多个层，包括远离衬底的红外透明电极，直接接触衬底的对电极和包含多个纳米颗粒的红外线敏化层。 这些层可以是无机或有机材料。 除了电极和敏化层之外，多层堆叠可以包括空穴阻挡层，电子阻挡层和抗反射层。 红外线增感层可以是PbS或PbSe量子点。

公开(公告)号：WO2012170456A3

公开(公告)日：2013-04-25

申请号：PCT/US2012040980

申请日：2012-06-06

Applicant: UNIV FLORIDA ,  NANOHOLDINGS LLC ,  SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA K

Inventor： SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA K

IPC: H01L27/146 ,  H01L27/14

CPC classification number: H04N5/33 ,  G01J1/58 ,  H01L27/14649 ,  H01L27/288 ,  H01L51/4253 ,  H01L51/442 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/5096 ,  H04N5/374

Abstract: Imaging devices include an IR up-conversion device on a CMOS imaging sensor (CIS) where the up-conversion device comprises a transparent multilayer stack. The multilayer stack includes an IR sensitizing layer and a light emitting layer situated between a transparent anode and a transparent cathode. In embodiments of the invention, the multilayer stack is formed on a transparent support that is coupled to the CIS by a mechanical fastener or an adhesive or by lamination. In another embodiment of the invention, the CIS functions as a supporting substrate for formation of the multilayer stack.

Abstract translation: 成像设备包括CMOS成像传感器（CIS）上的IR上转换设备，其中上变频设备包括透明多层堆叠。 多层堆叠包括IR敏感层和位于透明阳极和透明阴极之间的发光层。 在本发明的实施方案中，多层叠层形成在通过机械紧固件或粘合剂或通过层压联接到CIS的透明支撑件上。 在本发明的另一个实施例中，CIS用作用于形成多层叠层的支撑衬底。

公开(公告)号：WO2012170457A3

公开(公告)日：2013-03-07

申请号：PCT/US2012040981

申请日：2012-06-06

Applicant: UNIV FLORIDA ,  NANOHOLDINGS LLC ,  SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA K

Inventor： SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA K

IPC: H01L51/52

CPC classification number: H01L51/52 ,  H01L27/288 ,  H01L31/02322 ,  H01L31/055 ,  H01L51/0083 ,  H01L51/4253 ,  H01L51/426 ,  H01L51/442 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/5096 ,  Y02E10/52

Abstract: Embodiments of the invention are directed to a transparent up-conversion device having two transparent electrodes. In embodiments of the invention, the up-conversion device comprises a stack of layers proceeding from a transparent substrate including an anode, a hole blocking layer, an IR sensitizing layer, a hole transport layer, a light emitting layer, an electron transport layer, a cathode, and an antireflective layer. In an embodiment of the invention, the up-conversion device includes an IR pass visible blocking layer,

Abstract translation: 本发明的实施例涉及一种具有两个透明电极的透明上变换装置。 在本发明的实施例中，上转换装置包括从包括阳极，空穴阻挡层，IR增感层，空穴传输层，发光层，电子传输层， 阴极和抗反射层。 在本发明的一个实施例中，上变换装置包括IR通道可见阻挡层，

公开(公告)号：WO2017039774A3

公开(公告)日：2017-04-13

申请号：PCT/US2016037056

申请日：2016-06-10

Applicant: UNIV FLORIDA ,  NANOHOLDINGS LLC

Inventor： SO FRANKY ,  KIM DO YOUNG ,  LEE JAE WOONG ,  PRADHAN BHABENDRA K

IPC: G01J1/04 ,  G01J1/42 ,  G01J1/58

CPC classification number: H01L31/055 ,  H01L31/18 ,  Y02E10/52

Abstract: Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold

Abstract translation: 本文描述的实施方案通常涉及能够吸收红外辐射并产生电荷载体的单分散纳米粒子。 在一些情况下，至少一部分纳米颗粒是纳米晶体。 在某些实施方案中，根据包括纳米晶体形成步骤的方法形成单分散吸收IR的纳米晶体，该方法包括将包含纳米晶体的第一元素的第一前体溶液加入到包含纳米晶体的第二元素的第二前体溶液中以形成 第一混合前体溶液，其中第一混合前体溶液中第一元素与第二元素的摩尔比高于成核阈值。 该方法还可以包括纳米晶体生长步骤，包括将第一前体溶液加入到第一混合前体溶液中以形成第二混合前体溶液，其中第二混合前体溶液中第一元素与第二元素的摩尔比低于 成核阈值

公开(公告)号：WO2013003850A8

公开(公告)日：2013-05-16

申请号：PCT/US2012045272

申请日：2012-07-02

Applicant: UNIV FLORIDA ,  SO FRANKY ,  KIM DO YOUNG ,  LEE JAE WOONG ,  PRADHAN BHABENDRA K

Inventor： SO FRANKY ,  KIM DO YOUNG ,  LEE JAE WOONG ,  PRADHAN BHABENDRA K

IPC: H01L31/10 ,  H01L51/50

CPC classification number: H01L27/3227 ,  H01L27/288 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022491 ,  H01L31/035218 ,  H01L31/09 ,  H01L31/143 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/184 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0084 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/442 ,  H01L51/5048 ,  H01L51/56 ,  H01L2031/0344 ,  H04N5/33 ,  Y02E10/549

Abstract: Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunneling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLED coupled to the photodetector.

Abstract translation: 描述了光电检测器，其制造方法以及使用其来检测辐射的方法。 光电探测器可以包括第一电极，光敏化层，电子阻挡/隧穿层和第二电极。 还描述了红外 - 可见上转换器件，制造该器件的方法以及使用该上转换器件来检测辐射的方法。 红外 - 可见光上转换器件可以包括光电探测器和耦合到光电探测器的OLED。

公开(公告)号：WO2013003850A3

公开(公告)日：2013-04-11

申请号：PCT/US2012045272

申请日：2012-07-02

Applicant: UNIV FLORIDA ,  SO FRANKY ,  KIM DO YOUNG ,  LEE JAE WOONG ,  PRADHAN BHABENDRA K

Inventor： SO FRANKY ,  KIM DO YOUNG ,  LEE JAE WOONG ,  PRADHAN BHABENDRA K

IPC: H01L31/10 ,  H01L51/50

CPC classification number: H01L27/3227 ,  H01L27/288 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022491 ,  H01L31/035218 ,  H01L31/09 ,  H01L31/143 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/184 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0084 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/442 ,  H01L51/5048 ,  H01L51/56 ,  H01L2031/0344 ,  H04N5/33 ,  Y02E10/549

Abstract: Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunneling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLED coupled to the photodetector.

公开(公告)号：WO2011149960A2

公开(公告)日：2011-12-01

申请号：PCT/US2011037772

申请日：2011-05-24

Applicant: UNIV FLORIDA ,  NANOHOLDINGS LLC ,  SO FRANKY ,  KIM DO YOUNG ,  SONG DONG WOO ,  SARASQUETA GALILEO ,  PRADHAN BHABENDRAK K

Inventor： SO FRANKY ,  KIM DO YOUNG ,  SONG DONG WOO ,  SARASQUETA GALILEO ,  PRADHAN BHABENDRAK K

IPC: H01L31/09

CPC classification number: H01L27/288 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/0296 ,  H01L31/102 ,  H01L51/0047 ,  H01L51/0078 ,  H01L51/4273 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/5096 ,  Y02E10/549

Abstract: Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with upconversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.

Abstract translation: 本发明的实施例涉及一种用于感测具有上变频的红外（IR）辐射的改进装置，以提供具有比入射的IR辐射（例如可见光）更短波长的电磁辐射的输出。 该装置包括阳极，用于将IR感测层与阳极分离的空穴阻挡层，通过IR感测层与阳极分离的有机发光层和阴极。 空穴阻挡层确保当在阳极和阴极之间施加电位时，有机发光层仅在IR感测层被IR辐射照射时才产生电磁辐射。

公开(公告)号：WO2012138651A8

公开(公告)日：2013-10-17

申请号：PCT/US2012031988

申请日：2012-04-03

Applicant: UNIV FLORIDA ,  NANOHOLDINGS LLC ,  SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA K

Inventor： SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA K

IPC: H01L31/078 ,  H01L31/042

CPC classification number: H01L31/0687 ,  H01L25/047 ,  H01L27/302 ,  H01L31/022466 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/0725 ,  H01L51/4213 ,  H01L51/426 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: Embodiments of the subject invention relate to solar panels, methods of fabricating solar panels, and methods of using solar panels to capture and store solar energy. An embodiment of a solar panel can include a photovoltaic cell that is sensitive to visible light and an infrared photovoltaic cell that is sensitive to light having a wavelength of greater than 0.70 mum.

Abstract translation: 本发明的实施例涉及太阳能电池板，制造太阳能电池板的方法，以及使用太阳能电池板捕获和储存太阳能的方法。 太阳能电池板的一个实施例可以包括对可见光敏感的光伏电池和对波长大于0.70μm的光敏感的红外光电池。

公开(公告)号：WO2013028232A8

公开(公告)日：2013-09-19

申请号：PCT/US2012026920

申请日：2012-02-28

Applicant: UNIV FLORIDA ,  NANOHOLDINGS LLC ,  SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA

Inventor： SO FRANKY ,  KIM DO YOUNG ,  PRADHAN BHABENDRA

IPC: H01L31/101

CPC classification number: H01L27/3234 ,  G02B23/12 ,  H01L27/288 ,  H01L27/305 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/101 ,  H01L51/0053 ,  H01L51/4246 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

Abstract: Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.

Abstract translation: 本发明的实施例涉及具有由光电检测器的阴极和IR感光层之间的电荷倍增层（CML）的定位产生的增益的红外光电检测器，其中在CML处累积电荷降低了阴极和 CML促进注入电子，导致仅电子器件的增益。 本发明的其它实施例涉及将红外光电检测器的增益纳入可用于夜视和其它应用的IR到可见的上转换装置中。