Abstract:
본 발명은 공정흑연을 이용한 그래핀 제조방법에 관한 것으로서, 본 발명에 따른 공정흑연을 이용한 그래핀 제조방법은 금속 및 흑연을 포함하는 혼합 분말을 소결하여 다이아몬드 및 미반응 흑연을 포함하는 소결체를 제조하는 제1단계; 상기 소결체를 강산 수용액에 침지하고 전기분해하여 다이아몬드 및 흑연을 포함하는 혼합물로 변환하는 제2단계; 상기 혼합물에 과망간산칼륨(KMnO 4 ) 수용액을 투입하여 교반하는 제3단계; 상기 혼합물 내의 흑연을 박리시키는 제4단계; 박리된 산화 그래핀을 회수하는 제5단계; 및 상기 박리된 산화 그래핀을 환원시키는 제6단계;를 포함한다. 본 발명에 따르면, 다이아몬드 제조 공정 후 폐기되는 부산물인 공정흑연을 재활용하여 그래핀의 원료로 사용함으로써 그래핀 제조 시 비용을 절감할 수 있으며, 공정흑연을 폐기하기 위한 추가비용 또한 절감할 수 있는 효과가 있다.
Abstract:
Methods for removing, or leaching, cobalt or other diamond-diamond bonding catalysts from polycrystalline diamond compacts (PDCs) or other structures formed from polycrystalline diamond include leaching under conditions that simulate use of PDCs in a hot hole drilling environment. A leaching agent may be formulated, when used under appropriate conditions, to remove or substantially remove cobalt or another catalyst from polycrystalline diamond without dissolving, degrading or otherwise attacking a substrate that supports or carries the polycrystalline diamond. The leaching agent may include one or more components that mimic the chemicals or conditions to which a PDC would be exposed in a hot hole drilling environment. Polycrystalline diamond structures from which cobalt or another diamond-diamond bonding catalyst has been removed or substantially removed are also disclosed, as are systems for leaching cobalt or other diamond-diamond bonding catalysts from polycrystalline diamond.
Abstract:
A method for leaching a PCD table for a cutter element includes (a) positioning a PCD table within a leaching chamber. The method also includes (b) submerging the PCD table in an acid within the leaching chamber. In addition, the method includes (c) sealing the leaching chamber. Further, the method includes (d) increasing the pressure within the leaching chamber to a pressure greater than or equal to 20,000 psi after (c).
Abstract:
Cutting elements include a substrate, a thermally stable polycrystalline table comprising a superhard material secured to the substrate, and a layer of metal interposed between, and attaching the substrate and the thermally stable polycrystalline table. Methods of forming a cutting element include providing a thermally stable polycrystalline table in a mold, providing a layer of metal on the thermally stable polycrystalline table, distributing a mixture of particles comprising a plurality of hard particles and a plurality of particles comprising a matrix material on the layer of metal, and heating the mold while applying pressure to the mixture of particles to cause the mixture of particles to coalesce and form a substrate and at least partially melt the layer of metal to flow and wet the thermally stable polycrystalline table and the substrate to form an attachment therebetween.
Abstract:
Disclosed herein is an apparatus and method for growing a synthetic diamond. The apparatus for growing a synthetic diamond comprises: a reaction area contained with a high pressure, high temperature apparatus; and a means for pulling a vacuum on the reaction area. The method for growing a synthetic diamond includes the steps of using a reaction area contained within a high pressure, high temperature apparatus; and pulling a vacuum on the reaction area.
Abstract:
A design for high pressure/high temperature apparatus and reaction cell to achieve SIMILAR 30 GPa pressure in SIMILAR 1 cm volume and SIMILAR 100 GPa pressure in SIMILAR 1 mm volumes and 20-5000 DEG C temperatures in a static regime. The device includes profiled anvils (28) action on a reaction cell (14, 16) containing the material (26) to be processed. The reaction cell includes a heater (18) surrounded by insulating layers and screens. Surrounding the anvils are cylindrical inserts and supporting rings (30-48) whose hardness increases towards the reaction cell. These volumes may be increased considerably if applications require it, making use of presses that have larger loading force capability, larger frames and using larger anvils.
Abstract:
A method and apparatus for fabricating and drying wafers (13), including micro-electronics mechanical systems (MEMS) structures, in a second supercritical processing fluid environment. The apparatus utilizes an inverted pressure vessel (11) connected to a supercritical processing fluid supply and recovery system, with an internal heat exchanger (9) connected to external heating and cooling sources, which is closed with a vertically movable base (10). A wafer cassette (14) configured for supporting multiple wafers (13) is submerged in a first processing fluid within a container (12), which is installed on the base plate (10) for insertion onto the pressure vessel (11). Vessel (11) inlet (2) and outlet (5) tubes extend vertically downward from the ceiling of the pressure vessel (11) to nearly the base plate (10). Container (12) inlet (1) and outlet (4) tubes extend vertically down from the ceiling of the pressure vessel (11) to the inside of the container (12) and nearly to the bottom of the container (12).
Abstract:
Compositions including one or more polymers are provided. Exemplary polymers include polymeric carbon monoxides. The compositions can be prepared by subjecting a source material to x-rays, optionally at increased pressures. The compositions can be used in a variety of applications, such as fuels, optics, and electronics.
Abstract:
A capsule assembly for an ultra-high pressure furnace, comprising a containment tube having an interior side surface and defining a central longitudinal axis; a chamber suitable for accommodating a reaction assembly, a proximate and a distal end heater assembly, and a side heater assembly. When assembled, the chamber is contained within the containment tube and arranged longitudinally between the proximate and distal end heater assemblies. The side heater assembly is disposed adjacent the interior side surface and electrically connects the end heater assemblies with each other. Each end heater assembly has a respective peripheral side disposed adjacent the interior side surface. Heat is produced in the chamber in response to an electric current flowing through the end and side heater assemblies. At least a proximate side heater barrier spaces apart the side heater assembly from at least the proximate end heater assembly, adjacent its peripheral side, operative to prevent a portion of the side heater assembly from intruding between the peripheral side of the proximate end heater assembly and the containment tube and short-circuiting at least part of the proximate end heater assembly, when the end heater assemblies move towards each other in response to a force applied by the ultra-high pressure furnace onto the capsule assembly along the central longitudinal axis.