Abstract:
An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.
Abstract:
An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.
Abstract:
The present invention relates to a beam optical component (1, 201) for acting on a charged particle beam (63) including a first element (3; 203) having a first opening (9; 209) for acting on the charged particle beam (63), at least a second element (5; 205) for acting on the charged particle beam (63); at least one distance piece (20a, 20b, 20c) positioned between the first element (3; 203) and the second element (5; 205) to define a minimum distance between the first element (3; 203) and the second element (5; 205); and a first holding piece (30a; 30b; 30c) for abutting the first element (3) to the at least one distance piece (20a, 20b, 20c), whereby the first holding piece (30a; 30b; 30c) is attached to the at least one distance piece (20a, 20b, 20c). First and second elements (3; 203; 5; 205) are preferably electrodes or pole pieces to act on the charged particle beam by an electrostatic or magnetic force. With the first holding piece (30a; 30b; 30c) attached to the at least one distance piece, distorting mechanical forces on the first and second elements (3, 5) are reduced which improves the performance of the respective beam optical components ( l ; 201).
Abstract:
The present invention relates to a cathode for an X-ray tube, an X- ray tube, a system for X-ray imaging, and a method for an assembly of a cathode for an X-ray tube. In order to provide a cathode with an improved and facilitated assembly, a cathode (10) for an X-ray tube is provided, comprising a filament (12), a support structure (14), a body structure (16), and a filament frame structure (18). The filament is provided to emit electrons towards an anode in an electron emitting direction (24), and the filament at least partially comprises a helical structure (26). Further, the filament is held by the support structure, which is fixedly connected to the body structure. The filament frame structure is provided for electron-optical focussing of the emitted electrons, and the filament frame structure is provided adjacent to the outer boundaries of the filament. The filament frame structure comprises frame surface portions arranged transverse to the emitting direction, and the filament frame structure is held by the support structure.
Abstract:
A method of sustained self-sputtering of lithium in a sputtering station having a lithium metal target, the method comprising initiating a lithium sputtering reaction in the sputtering station by igniting an initial plasma comprising a majority fraction of inert gas ions and inducing a sustained lithium self-sputtering reaction by reducing supply of an inert gas to the sputtering station under conditions that provide a sustained self-sputtering lithium plasma comprising a majority fraction of lithium ions.
Abstract:
The invention relates to devices intended for processing materials in a low-temperature gas discharge plasma medium, and specifically to induction plasma generators arranged inside a process volume (working chamber). The technical problem addressed by the proposed invention consists in increasing the efficiency of the device; in increasing the operational reliability of the device; in increasing the purity of the plasma medium and in increasing the density of the plasma produced; increasing the service life of the device; reducing the level of noise; and reducing the overall dimensions of the device. In the plasma generator in accordance with the first embodiment, which plasma generator comprises a helical coil arranged inside a conducting screen, the inner surface of which has a near-cylindrical form, wherein the space between the turns of the coil and between the coil and the screen is filled with a dielectric, the coil is planar, the distance between the plane of the coil and the outer surface of the dielectric is less than twice the thickness of the coil, and the distance between the plane of the coil and the base of the inner surface of the screen is greater than twice the distance between the plane of the coil and the outer surface of the dielectric. In the plasma generator in accordance with the second embodiment, the coil is planar, the screen is in the form of a ring having an axis which is perpendicular to the plane of the coil, and that edge of the ring which is turned towards the volume in which it is necessary to produce the plasma is sealed by a dielectric. In the plasma generator in accordance with the third embodiment, the screen is electrically connected to one of the ends of the coil, and the dielectric strength of the dielectric is in the range of from 2.5 to 50. The proposed structural design of the generator ensures greater plasma density and increased purity of the plasma medium than in the prior art, with this being achieved under the same conditions in the discharge chamber and with the same HF power being supplied to the device. The proposed device has a high degree of efficiency, has good operational reliability and has an increased service life and small overall dimensions.