公开(公告)号：WO2021122014A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/084372

申请日：2020-12-03

Applicant: SILTRONIC AG

Inventor： BAUER, Stefan ,  KRETSCHMER, Robert

IPC: C30B29/06 ,  C30B33/06 ,  G01N21/3563 ,  H01L21/66 ,  G01N21/47 ,  G01N21/95 ,  G01N2021/3568 ,  G01N21/4795 ,  G01N21/9503 ,  G01N21/9505 ,  H01L22/12

Abstract: Verfahren zur Bestimmung von Defektdichten in Halbleiterscheiben aus einkristallinem Silizium mittels Laser Scattering Tomography, umfassend das Bestrahlen einer geteilten Halbleiterscheibe mittels eines IR-Lasers entlang eines Abtastwegs parallel zu einer Trennfläche, die einen Winkel von 90° mit einer Oberfläche der Halbleiterscheibe einschließt, gekennzeichnet durch Teilen der Halbleiterscheibe senkrecht zur Oberfläche der Halbleiterscheibe entlang einer Trennlinie mittels thermischem Laserstrahl-Separieren, wobei die Oberfläche der Halbleiterscheibe im Wesentlichen {111}-orientiert ist.

公开(公告)号：WO2021141835A1

公开(公告)日：2021-07-15

申请号：PCT/US2021/012022

申请日：2021-01-04

Applicant: KLA CORPORATION

Inventor： JIANG, Xuguang ,  RHA, JuHwan

IPC: H01L21/66 ,  G01N21/88 ,  G01N21/95 ,  H01L21/67 ,  G01N2021/8887 ,  G01N21/8851 ,  G01N21/9505 ,  G01N2201/06113 ,  G06T2207/30148 ,  G06T7/0004 ,  G06T7/11 ,  G06T7/136

Abstract: A projection is determined in a semiconductor image, which can be an X projection and/or a Y projection. At least one threshold is applied to the projection thereby forming at least one segment within the region. A fine segment can be determined in the region using a distance value from the projection. Defect detection can be performed in one of the fine segments.

公开(公告)号：WO2022020521A1

公开(公告)日：2022-01-27

申请号：PCT/US2021/042643

申请日：2021-07-21

Applicant: APPLIED MATERIALS, INC.

Inventor： UMMETHALA, Upendra ,  ERICKSON, Blake ,  KUMAR, Prashanth ,  KUTNEY, Michael ,  TINDEL, Steven Trey ,  ZHU, Zhaozhao

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/677 ,  G01B11/002 ,  G01N21/25 ,  G01N21/9505 ,  H01L21/67259 ,  H01L21/67276 ,  H01L21/67294

Abstract: A method for a substrate measurement subsystem is provided. An indication is received that a substrate being processed at a manufacturing system has been loaded into a substrate measurement subsystem. First positional data of the substrate within the substrate measurement subsystem is determined. One or more portions of the substrate to be measured by one or more sensing components of the substrate measurement subsystem are determined based on the first positional data of the substrate and a process recipe for the substrate. Measurements of each of the determined portions of the substrate are obtained by one or more sensing components of the substrate measurement subsystem. The obtained measurements of each of the determined portions of the substrate are transmitted to a system controller.

公开(公告)号：WO2021211988A8

公开(公告)日：2021-10-21

申请号：PCT/US2021/027714

申请日：2021-04-16

Applicant: ONTO INNOVATION INC.

Inventor： KELLER, Nicholas James ,  ANTONELLI, George Andrew

IPC: H01L21/66 ,  H01L27/11582 ,  G01N21/95 ,  G01N21/552 ,  G01N21/9505 ,  G03F7/70683 ,  H01L22/12 ,  H01L22/34

Abstract: A metrology target is designed for measuring a feature at the bottom of a trench in a device under test, such as a tungsten recess vertical profile in a wordline in a three-dimensional (3D) NAND. The metrology target follows the design rules for the device under test and includes a tier stack with a plurality of tier stack pairs including, each including a conductor layer, such as tungsten, and an insulator layer, such as silicon dioxide and a trench that extends through the tier stack pairs. The metrology target includes a via that extends through the tier stack pairs and is positioned a lateral distance to the trench to promote access of light to a bottom of the trench, via plasmonic resonance, for measurement of a characteristic of the trench, such as the tungsten recess at the bottom of the wordline slit.

公开(公告)号：WO2021126605A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/063849

申请日：2020-12-08

Applicant: KLA CORPORATION

Inventor： BUHL, Stefan ,  GROEGER, Philip ,  LOMTSCHER, Patrick

IPC: G03F7/20 ,  G01N21/9505 ,  G03F7/705 ,  G03F7/70625 ,  G06F30/32

Abstract: For a wafer exposure method, critical dimension values are obtained from wafer structures at predefined measurement sites. Position-dependent process parameters of an exposure process used for forming the wafer structures are obtained. From the critical dimension values at the measurement sites, coefficients of a preset model and at least one further model are determined. Each further model differs in at least one term from the preset model and from the other models. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. Residuals between approximated critical dimension values obtained from the models and the critical dimension values obtained at the measurement sites are determined. Among the preset model and the at least one further model an updated model is selected. The selection is based on a criterion weighting the residuals, the number of terms of the model and/or the order or the terms of the model.