公开(公告)号：WO2022006010A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/039444

申请日：2021-06-28

Applicant: LAM RESEARCH CORPORATION

Inventor： ABEL, Joseph R. ,  VAN SCHRAVENDIJK, Bart J. ,  CURTIN, Ian John ,  AGNEW, Douglas Walter ,  AUSTIN, Dustin Zachary ,  GUPTA, Awnish

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/04 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/5096

Abstract: Methods of forming air gaps in hole and trench structures are disclosed. The methods may be used to form buried voids, i.e., voids for which the top is below the top of the adjacent features. The methods include inhibition of the hole or trench structures and selective deposition at the top of the structure forming an air gap within the structures. In some embodiments, the methods are to reduce intra-level capacitance in semiconductor devices.

公开(公告)号：WO2021252788A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/036856

申请日：2021-06-10

Applicant: ENTEGRIS, INC.

Inventor： CHEN, Philip S. H. ,  CONDO, Eric ,  HENDRIX, Bryan C. ,  BAUM, Thomas H. ,  KUIPER, David

IPC: C23C16/455 ,  C23C16/36 ,  H01L21/02 ,  C07F7/10 ,  C07F7/18 ,  C01B21/0828 ,  C07F7/0814 ,  C07F7/1804 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

公开(公告)号：WO2023124432A1

公开(公告)日：2023-07-06

申请号：PCT/CN2022/126152

申请日：2022-10-19

Applicant: 宁波华远电子科技有限公司 ,  NINGBO WAKAN ELECTRONIC SCIENCE TECHNOLOGY CO., LTD.

Inventor： 张成立 ,  ZHANG, Chengli ,  王强 ,  WANG, Qiang ,  徐光龙 ,  XU, Guanglong ,  张洪亮 ,  ZHANG, Hongliang ,  高俊华 ,  GAO, Junhua ,  曹鸿涛 ,  CAO, Hongtao ,  高子泓 ,  GAO, Zihong

IPC: H05K1/09 ,  C23C16/02 ,  C23C16/0245 ,  C23C16/18 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/505 ,  C23C28/02 ,  C23C28/023 ,  C25D3/38 ,  C25D5/56 ,  H05K1/02 ,  H05K1/0298 ,  H05K1/11 ,  H05K1/115 ,  H05K3/18 ,  H05K3/38 ,  H05K3/381 ,  H05K3/42 ,  H05K3/423 ,  H05K3/46 ,  H05K3/4644

Abstract: 本申请公开了一种柔性高密度互连电路板及其制备方法。所述柔性高密度互连电路板中，在柔性基体上具有超薄、超窄与较小线距的Cu线构造，包括在粗糙的柔性基体上等离子体活化后先制备一层Cu种子层，然后在该种子层上再制备Cu线电路，其中Cu线电路的厚度为50～500nm，Cu线的宽度为7～14μm，Cu线的线间距为7～14μm；其中Cu种子层的厚度为10～50nm，能够完全保型的覆盖柔性基体表面，且与基体之间具有强的结合力，表现在弯折1000次/min后无脱落现象，Cu种子层的电阻率为≤20μΩ·cm。它具有柔性基体上超薄、超窄与较小线距的Cu线构造，并与柔性基板结合力好，且Cu线厚度均匀连续。

公开(公告)号：WO2023057464A1

公开(公告)日：2023-04-13

申请号：PCT/EP2022/077608

申请日：2022-10-04

Applicant: SMART COLORING GMBH

Inventor： ROBERTZ, Bernd

IPC: C08J7/04 ,  B29C48/00 ,  C08J7/048 ,  C08J11/06 ,  C08L23/06 ,  D06P1/90 ,  C23C14/00 ,  C23C16/22 ,  B29B13/00 ,  B29B2013/002 ,  C08J2323/06 ,  C08J2323/12 ,  C08J2423/08 ,  C08J2433/08 ,  C08J2433/10 ,  C08J2453/00 ,  C08J2467/04 ,  C08J7/0423 ,  C23C16/401 ,  C23C16/45542 ,  C23C16/45555 ,  C23C16/511 ,  D06P5/13 ,  D06P5/132 ,  D06P5/134 ,  D06P5/137

Abstract: It is an object of the invention to provide a decontamination bath for decontaminating plastic articles comprising a contaminant, wherein the decontamination bath comprises - water, - a non-polar organic solvent component, - optionally an anionic and/or non-ionic surfactant, - a resoiling inhibitor, and - an alkaline agent or an acidic agent for adjusting the pH of the decontamination bath, wherein the amount of the non-polar organic solvent component in the decontamination bath is 0,1 wt% to 25 wt% based on the total weight of the decontamination bath, and wherein the decontamination bath comprise the alkaline agent and the pH of the decontamination bath is ≥ 8, or wherein the decontamination bath comprise the acidic agent and the pH of the decontamination bath is ≤ 6. It is a further object of the invention to provide a method for decontaminating a plastic article using the above decontamination bath.