公开(公告)号：WO2021202358A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/024623

申请日：2021-03-29

Applicant: CREE, INC.

Inventor： NOORI, Basim ,  MARBELL, Marvin ,  MU, Qianli ,  LIM, Kwangmo Chris ,  WATTS, Michael E. ,  BOKATIUS, Mario ,  KIM, Jangheon

IPC: H01L29/417 ,  H01L23/66 ,  H01L25/16 ,  H03F1/00 ,  H03F3/00 ,  H01L23/00 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/08225 ,  H01L23/481 ,  H01L23/49822 ,  H01L24/08 ,  H01L24/42 ,  H01L24/81 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/778 ,  H01L29/7786 ,  H03F1/565 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451 ,  H03F3/193 ,  H03F3/195

Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.