公开(公告)号：WO2021262920A2

公开(公告)日：2021-12-30

申请号：PCT/US2021/038799

申请日：2021-06-24

申请人： CREE, INC.

发明人： LIM, Kwangmo Chris ,  NOORI, Basim ,  MU, Qianli ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  KOMPOSCH, Alexander

IPC分类号： H01L23/66 ,  H01L23/482 ,  H03F3/19 ,  H05K1/02 ,  H01L23/498 ,  H01L23/538 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778 ,  H03F3/72 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2223/6688 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17107 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32235 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83805 ,  H01L2224/92125 ,  H01L23/047 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/492 ,  H01L23/49531 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7786 ,  H01L2924/1421 ,  H01L2924/161 ,  H01L2924/171 ,  H01L2924/181 ,  H01L2924/19107 ,  H03F1/0288 ,  H03F1/526 ,  H03F2200/451 ,  H03F3/195 ,  H03F3/211 ,  H05K1/0243 ,  H05K1/113 ,  H05K2201/09627 ,  H05K2201/09636 ,  H05K2201/10545 ,  H05K3/3415 ,  H05K3/3442

摘要： RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

公开(公告)号：WO2019104325A1

公开(公告)日：2019-05-31

申请号：PCT/US2018/062612

申请日：2018-11-27

申请人： CREE, INC.

发明人： ARIGONG, Bayaner ,  JANG, Haedong ,  WILSON, Richard ,  TRANG, Frank ,  MU, Qianli ,  HASHIMOTO, Ej

IPC分类号： H03F1/56 ,  H03F3/195 ,  H04B1/04 ,  H03H7/38 ,  H03F1/02

CPC分类号： H03H7/40 ,  H01L2223/6655 ,  H03F1/0205 ,  H03F1/0222 ,  H03F1/565 ,  H03F3/193 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/451 ,  H03H7/38 ,  H03H11/30 ,  H03H2007/013 ,  H04B1/0458

摘要： An impedance matching network (116) for a radio frequency (RF) amplifier device (108) includes a baseband termination circuit (122) having reactive components configured to present low impedance to signals in a baseband frequency range that is below a fundamental frequency range associated with the RF amplifier device (108). The network (116) also includes a fundamental frequency matching circuit (124) having reactive components configured to substantially match an output impedance of the RF amplifier device (108) in the fundamental frequency range to a predetermined value. The network (116) also includes a second-order harmonic termination circuit (126) having reactive components configured to present low impedance at second order harmonics of RF signals having a fundamental frequency in the fundamental frequency range. Other embodiments include amplifier circuits comprising the network (116) and an RF amplifier device (108), as well as packaged RF amplifiers that include a metal flange (202), an RF transistor (214), and an integrated passive device (216) comprising the network (116).

公开(公告)号：WO2021202674A2

公开(公告)日：2021-10-07

申请号：PCT/US2021/025102

申请日：2021-03-31

申请人： CREE, INC.

发明人： NOORI, Basim ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  LIM, Kwangmo Chris ,  KOMPOSCH, Alexander ,  MU, Qianli

IPC分类号： H01L23/66 ,  H01L23/36 ,  H01L23/498 ,  H01L23/522 ,  H01L23/482 ,  H01L23/057 ,  H01L23/495 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/16227 ,  H01L2224/214 ,  H01L23/047 ,  H01L23/13 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/49531 ,  H01L24/19 ,  H01L24/20 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7786 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/1421 ,  H03F1/0288 ,  H03F2200/451 ,  H03F3/195

摘要： A transistor amplifier includes a semiconductor layer structure comprising first and second major surfaces and a plurality of unit cell transistors on the first major surface that are electrically connected in parallel, each unit cell transistor comprising a gate finger coupled to a gate manifold, a drain finger coupled to a drain manifold, and a source finger. The semiconductor layer structure is free of a via to the source fingers on the second major surface.

公开(公告)号：WO2020018761A3

公开(公告)日：2020-01-23

申请号：PCT/US2019/042359

申请日：2019-07-18

申请人： CREE, INC.

发明人： TRANG, Frank ,  MU, Qianli ,  JANG, Haedong ,  MOKHTI, Zulhazmi

IPC分类号： H01L23/482 ,  H01L23/00 ,  H01L29/06 ,  H01L23/522

摘要： A multi-cell transistor (100) includes a semiconductor structure (110), a plurality of unit cell transistors (170) that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

公开(公告)号：WO2021202075A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/021848

申请日：2021-03-11

申请人： CREE, INC.

发明人： NOORI, Basim ,  MARBELL, Marvin ,  LIM, Kwangmo Chris ,  MU, Qianli

IPC分类号： H01L23/66 ,  H01L23/538 ,  H01L25/07 ,  H01L23/31 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6683 ,  H01L2224/06181 ,  H01L23/3677 ,  H01L23/49503 ,  H01L23/49531 ,  H01L23/49548 ,  H01L23/49589 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/18 ,  H01L25/0657 ,  H01L25/072 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2924/19107 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213

摘要： An integrated circuit device package includes a substrate, a first die comprising active electronic components attached to the substrate, and package leads configured to conduct electrical signals between the first die and an external device. At least one integrated interconnect structure is provided on the first die opposite the substrate. The at least one integrated interconnect structure extends from the first die to an adjacent die attached to the substrate and/or to at least one of the package leads, and provides electrical connection therebetween. Related devices and power amplifier circuits are also discussed.

公开(公告)号：WO2020018761A2

公开(公告)日：2020-01-23

申请号：PCT/US2019/042359

申请日：2019-07-18

申请人： CREE, INC.

发明人： TRANG, Frank ,  MU, Qianli ,  JANG, Haedong ,  MOKHTI, Zulhazmi

IPC分类号： H01L23/482 ,  H01L23/00 ,  H01L29/06 ,  H01L23/522

摘要： A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

公开(公告)号：WO2022055776A1

公开(公告)日：2022-03-17

申请号：PCT/US2021/048779

申请日：2021-09-02

申请人： CREE, INC.

发明人： NOORI, Basim ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  LIM, Kwangmo Chris ,  KOMPOSCH, Alexander ,  MU, Qianli

IPC分类号： H01L23/047 ,  H01L23/31 ,  H01L23/495 ,  H01L23/66

摘要： RF transistor amplifiers an RF transistor amplifier die having a semiconductor layer structure, an interconnect structure having first and second opposing sides, wherein the first side of the interconnect structure is adjacent a surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement, and one or more circuit elements on the first and/or second side of the interconnect structure.

公开(公告)号：WO2021262538A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/037978

申请日：2021-06-18

申请人： CREE, INC.

发明人： KOMPOSCH, Alexander ,  MU, Qianli ,  WANG, Kun ,  WOO, Eng Wah

IPC分类号： H01L23/66 ,  H01L23/495 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2223/6688 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L2924/00014

摘要： A radio frequency (RF) transistor amplifier package includes a submount, and first and second leads extending from a first side of the submount. The first and second leads are configured to provide RF signal connections to one or more transistor dies on a surface of the submount. At least one rivet is attached to the surface of the submount between the first and second leads on the first side. One or more corners of the first side of the submount may be free of rivets. Related devices and associated RF leads and non-RF leads are also discussed.

公开(公告)号：WO2021247317A1

公开(公告)日：2021-12-09

申请号：PCT/US2021/034231

申请日：2021-05-26

申请人： CREE, INC.

发明人： LIM, Kwangmo Chris ,  NOORI, Basim ,  MU, Qianli ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  KOMPOSCH, Alexander

IPC分类号： H01L23/66 ,  H01L23/522 ,  H01L23/482 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/83805 ,  H01L2224/92225 ,  H01L23/057 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/49575 ,  H01L23/5225 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L29/41758 ,  H01L2924/15192 ,  H01L2924/15313 ,  H01L2924/15323 ,  H01L2924/1533 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30111 ,  H01Q1/526 ,  H03F1/56 ,  H03F3/19 ,  H03F3/211 ,  H03F3/72 ,  H03H2/008

摘要： RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

公开(公告)号：WO2021067028A1

公开(公告)日：2021-04-08

申请号：PCT/US2020/050875

申请日：2020-09-15

申请人： CREE, INC.

发明人： MU, Qianli ,  MOKHTI, Zulhazmi ,  GUO, Jia ,  SHEPPARD, Scott

IPC分类号： H03F1/32 ,  H01L29/20 ,  H01L29/417 ,  H01L29/778 ,  H03F3/195

摘要： Gallium nitride based RF transistor amplifiers include a semiconductor structure having a gallium nitride based channel layer and a gallium nitride based barrier layer thereon, and are configured to operate at a specific direct current drain-to-source bias voltage. These amplifiers are configured to have a normalized drain-to-gate capacitance at the direct current drain-to-source bias voltage, and to have a second normalized drain-to-gate capacitance at two-thirds the direct current drain-to-source bias voltage, where the second normalized drain-to-gate capacitance is less than twice the first normalized drain-to-gate capacitance.