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    SEAM-FREE GAPFILL DEPOSITION
    2.
    发明申请
    SEAM-FREE GAPFILL DEPOSITION 审中-公开

    公开(公告)号：WO2023018622A1

    公开(公告)日：2023-02-16

    申请号：PCT/US2022/039591

    申请日：2022-08-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ZHAO, Quinghua ,  CHENG, Rui ,  JANAKIRAMAN, Karthik

    IPC: C23C16/44 ,  C23C16/04 ,  C23C16/509 ,  H01L21/02 ,  H01L21/768

    Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing layer on surfaces defining the processing region of the semiconductor processing chamber. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber.

    PROCESS OF MANUFACTURING A PURE POROUS 3D DIAMOND
    3.
    发明申请
    PROCESS OF MANUFACTURING A PURE POROUS 3D DIAMOND 审中-公开

    公开(公告)号：WO2023017311A1

    公开(公告)日：2023-02-16

    申请号：PCT/IB2021/059872

    申请日：2021-10-26

    Applicant: ALKHAZRAJI, Saeed Al Hassan

    Inventor： ALKHAZRAJI, Saeed Al Hassan

    IPC: C01B32/25 ,  C01B32/26 ,  C23C16/01 ,  C23C16/04 ,  C23C16/27 ,  C30B29/04 ,  C30B29/66

    Abstract: A process for manufacturing a porous diamond having a tridimensional (3D) structure. The process comprises the steps of using a substrate with a pre-defined shape and a plurality of pores of a defined porosity shape and size, heating a reactant hydrocarbon gas and reactant hydrogen in a filament to form a product gas, depositing an activated carbon atom from the product gas onto the substrate, wherein the activated carbon atom reacts with the substrate to form a diamond structure on the substrate, and completely removing the substrate to obtain the 3D pure porous diamond structure, wherein the 3D pure porous diamond structure is formed entirely of diamond and is identical in shape and porosity shape and size of the plurality of pores as that of the substrate. The 3D pure porous diamond structure formed is of a controlled thickness and porosity, and devoid of the substrate.

    成膜方法及び成膜装置
    4.
    发明申请
    成膜方法及び成膜装置 审中-公开

    公开(公告)号：WO2023276795A1

    公开(公告)日：2023-01-05

    申请号：PCT/JP2022/024786

    申请日：2022-06-21

    Applicant: 東京エレクトロン株式会社

    Inventor： 布瀬　暁志

    IPC: H01L21/32 ,  C23C14/04 ,  C23C14/12 ,  C23C16/04 ,  H01L21/285 ,  H01L21/302 ,  H01L21/306 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316

    Abstract: 成膜方法は、下記（Ａ）～（Ｄ）を含む。（Ａ）第１膜が露出する第１領域と、前記第１膜とは異なる材料で形成される第２膜が露出する第２領域とを表面に有する基板を準備する。（Ｂ）前記基板の前記表面に対して有機化合物を供給し、前記第１領域と前記第２領域の両方に有機膜を形成する。（Ｃ）前記第１領域と前記第２領域のうち前記第１領域から選択的に前記有機膜を除去する。（Ｄ）前記第２領域に残る前記有機膜を用い、前記第１領域と前記第２領域のうち前記第１領域に選択的に第１対象膜を形成する。

    成膜方法及び成膜装置
    6.
    发明申请
    成膜方法及び成膜装置 审中-公开

    公开(公告)号：WO2022255214A1

    公开(公告)日：2022-12-08

    申请号：PCT/JP2022/021524

    申请日：2022-05-26

    Applicant: 東京エレクトロン株式会社

    Inventor： 藤田　成樹

    IPC: C23C16/04 ,  C23C16/44 ,  H01L21/205 ,  H01L21/768

    Abstract: 成膜方法は、下記（Ａ）～（Ｃ）を含む。（Ａ）隣り合う凹部と凸部を表面に含む基板の前記表面に液体を供給する。（Ｂ）前記液体を化学変化させる処理ガスを前記基板の前記表面に供給し、前記液体と前記処理ガスの反応によって前記液体を前記凹部から前記凸部に移動させ、前記凸部の頂面に膜を形成することで前記表面に形成される段差を拡張する。（Ｃ）前記膜の一部をエッチングする。

    PROCESS FOR LOCALIZED REPAIR OF GRAPHENE-COATED LAMINATION STACKS AND PRINTED CIRCUIT BOARDS
    7.
    发明申请
    PROCESS FOR LOCALIZED REPAIR OF GRAPHENE-COATED LAMINATION STACKS AND PRINTED CIRCUIT BOARDS 审中-公开

    公开(公告)号：WO2022243894A1

    公开(公告)日：2022-11-24

    申请号：PCT/IB2022/054618

    申请日：2022-05-18

    Applicant: MELLANOX TECHNOLOGIES, LTD. ,  BAR-ILAN UNIVERSITY

    Inventor： NAVEH, Doron ,  SMOLINSKY, Eilam Zigi Ben ,  LEVI, Adi ,  MENTOVICH, Elad ,  ATIAS, Boaz

    IPC: C23C16/04 ,  G03F7/16 ,  G03F7/20 ,  H01L21/285

    Abstract: Processes for localized lasering of a lamination stack and graphene-coated printed circuit board (PCB) are disclosed. An example PCB may include a lamination stack, post-lamination, that may further include a core, an adhesive layer, and at least one graphene-metal structure. A top layer of graphene of the graphene-metal structure may have never been grown before the lamination process or may have been removed post-lamination such that a portion of the top layer of graphene is missing. The localized lasering process described herein may grow (for the first time) or re-grow the graphene layer of the exposed portion of the metal layer without adverse effects to the rest of the lamination stack or PCB and while promoting a uniform layer of graphene on the top surface. A process of growing graphene through application of molecular layer and a self-assembled monolayer (SAM), are also described herein.

    用于耳机盒的镀膜遮蔽治具及其方法和耳机盒镀膜设备
    8.
    发明申请
    用于耳机盒的镀膜遮蔽治具及其方法和耳机盒镀膜设备 审中-公开

    公开(公告)号：WO2022228168A1

    公开(公告)日：2022-11-03

    申请号：PCT/CN2022/087309

    申请日：2022-04-18

    Applicant: 江苏菲沃泰纳米科技股份有限公司

    Inventor： 宗坚

    IPC: C23C16/04 ,  C23C16/50

    Abstract: 一种用于耳机盒的镀膜遮蔽治具及其方法和耳机盒镀膜设备。该镀膜遮蔽治具用于遮蔽一耳机盒，其中该耳机盒包括一非镀膜部分、一待镀膜部分以及一开口部。该镀膜遮蔽治具包括一遮蔽罩和一遮蔽套，其中该遮蔽罩适于被罩设于该耳机盒的该非镀膜部分之外；其中该遮蔽套适于被套设于该耳机盒的该开口部，并且该遮蔽套可密封地接合于该遮蔽罩，其中当该遮蔽罩接合于该遮蔽套时，该镀膜遮蔽治具用于密闭地遮蔽该耳机盒的该非镀膜部分，并且敞开地裸露该耳机盒的该待镀膜部分。该耳机盒镀膜设备包括具有一镀膜腔室的一镀膜设备主体和一或多个镀膜遮蔽治具。

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