Invention Grant
- Patent Title: Spin torque MRAM fabrication using negative tone lithography and ion beam etching
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Application No.: US15184109Application Date: 2016-06-16
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Publication No.: US10388857B2Publication Date: 2019-08-20
- Inventor: Anthony J. Annunziata , Armand A. Galan , Steve Holmes , Eric A. Joseph , Gen P. Lauer , Qinghuang Lin , Nathan P. Marchack
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/12 ; H01L43/02 ; H01L43/08 ; G11C11/16 ; G03F7/20 ; H01L27/22
Abstract:
A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.
Public/Granted literature
- US20170062707A1 SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND ION BEAM ETCHING Public/Granted day:2017-03-02
Information query
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