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    SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND ION BEAM ETCHING
    6.
    发明申请
    SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND ION BEAM ETCHING 有权
    旋转扭矩雕刻和离子束蚀刻的旋转扭矩MRAM制造

    公开(公告)号：US20170062708A1

    公开(公告)日：2017-03-02

    申请号：US14840176

    申请日：2015-08-31

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Anthony J. Annunziata ,  Armand A. Galan ,  Steve Holmes ,  Eric A. Joseph ,  Gen P. Lauer ,  Qinghuang Lin ,  Nathan P. Marchack

    IPC: H01L43/12

    CPC classification number: H01L43/12 ,  G03F7/70325 ,  G03F7/70425 ,  G11C11/161 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

    Abstract translation: 用于形成存储器件的方法包括使用掩模版和具有与光刻胶的极性相反的极性的显影剂掩蔽光致抗蚀剂材料以提供光致抗蚀剂材料岛。 蚀刻平坦化层以建立由光致抗蚀剂材料岛限定的平坦化材料的支柱。 蚀刻金属层以形成直径与平坦化材料的柱大致相同的金属柱。 蚀刻存储器堆叠以形成具有与金属柱大致相同直径的存储堆栈柱。 磁阻存储单元包括具有圆形横截面的磁隧道连接柱。 该柱具有钉扎磁性层，隧道势垒层和自由磁性层。 第一导电触点设置在磁隧道结柱的上方。 第二导电触点设置在磁隧道结柱的下方。

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