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公开(公告)号：US11937512B2
公开(公告)日：2024-03-19
申请号：US17303541
申请日：2021-06-02
摘要： A semiconductor device including a magnetic tunnel junction stack, a metallic hard mask aligned above the magnetic tunnel junction stack and an air gap surrounding the metallic hard mask. A method including forming a magnetic tunnel junction stack, forming a metallic hard mask aligned above the magnetic tunnel junction stack, conformally forming a dielectric over the metallic hard mask and the magnetic tunnel junction stack, forming barrier on vertical side surfaces of the dielectric, and removing the dielectric between the metallic hard mask and the barrier. A method including forming a magnetic tunnel junction stack, forming a metallic hard mask aligned above the magnetic tunnel junction stack, conformally forming a dielectric over the metallic hard mask and the magnetic tunnel junction stack, selectively removing a portion of the dielectric surrounding the metallic hard mark.
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公开(公告)号：US11077475B2
公开(公告)日：2021-08-03
申请号：US15602363
申请日：2017-05-23
摘要： A biosensor includes an array of metal nanorods formed on a substrate. An electropolymerized conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open and close responsively to electrical signals applied to the nanorods. A dispensing material is loaded in the reservoir to be dispersed in accordance with open pores.
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公开(公告)号：US20210066578A1
公开(公告)日：2021-03-04
申请号：US16552647
申请日：2019-08-27
摘要： A multilayered bottom electrode for a magnetic tunnel junction (MTJ) containing device is provided that includes, from bottom to top, a base segment having a first diameter and composed of a remaining portion of a first bottom electrode metal-containing layer, a middle segment having a second diameter and composed of a remaining portion of a second bottom electrode metal-containing layer, and an upper segment having a third diameter and composed of a remaining portion of a third bottom electrode metal-containing layer, wherein the first diameter is greater than the second diameter, and the third diameter is equal to, or less than, the second diameter. The wider base segment of each multilayered bottom electrode prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.
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公开(公告)号：US10903417B2
公开(公告)日：2021-01-26
申请号：US16266249
申请日：2019-02-04
摘要： A method of forming a magnetic tunnel junction (MTJ) containing device is provided in which a patterned sacrificial material is present atop a MTJ pillar that is located on a bottom electrode. A passivation material liner and a dielectric material portion laterally surround the MTJ pillar and the patterned sacrificial material. The patterned sacrificial material is removed from above the MTJ pillar and replaced with a top electrode. A seam is present in the top electrode. The method mitigates the possibility of depositing resputtered conductive metal particles on a sidewall of the MTJ pillar. Thus, improved device performance, in terms of a reduction in failure mode, can be obtained.
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5.发明申请公开(公告)号：US20200321220A1
公开(公告)日：2020-10-08
申请号：US16378072
申请日：2019-04-08
IPC分类号： H01L21/3213 , H01L21/67 , H01L43/02 , H01L43/12 , H01L45/00 , H01L21/285
摘要： A method for etching a poly-granular metal-based film includes providing a flow of a background gas in a plasma etching chamber containing a semiconductor structure including the poly-granular metal-based film formed over a substrate with a mask patterned over the poly-granular metal-based film. The method also includes applying a source power to generate a background plasma from the background gas, and providing a flow of a modifying gas while maintaining the flow of the background gas to generate a modifying plasma that produces a surface modification region with a substantially uniform depth in the top surface of the poly-granular metal-based film exposed by the mask. The method further includes stopping the flow of the modifying gas while maintaining the flow of the background gas, and applying a biasing power to the substrate to remove the surface modification region.
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公开(公告)号：US20200235286A1
公开(公告)日：2020-07-23
申请号：US16254021
申请日：2019-01-22
发明人： Nathan P. Marchack , Bruce B. Doris
摘要： A magnetic tunnel junction (MTJ) containing device is provided that includes an undercut conductive pedestal structure having a concave sidewall positioned between a bottom electrode and a MTJ pillar. The geometric nature of such a conductive pedestal structure makes the pedestal structure unlikely to be resputtered and deposited on a sidewall of the MTJ pillar, especially the sidewall of the tunnel barrier of the MTJ pillar. Thus, electrical shorts caused by depositing resputtered conductive metal particles on the sidewall of the tunnel barrier of the MTJ pillar are substantially reduced.
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公开(公告)号：US20200220073A1
公开(公告)日：2020-07-09
申请号：US16239012
申请日：2019-01-03
发明人： Nathan P. Marchack , Bruce B. Doris
摘要： A semiconductor structure and fabrication method of forming a semiconductor structure. In the method there is provided an electrically conductive structure embedded in an interconnect dielectric material layer of a magnetoresistive random access memory device. A conductive landing pad is located on a surface of the electrically conductive structure. A multilayered magnetic tunnel junction (MTJ) structure and an MTJ cap layer is formed on the landing pad. Then there is formed a metal hardmask layer on a surface of said MTJ cap layer, the etch stop layer being subject to lithographic patterning and etching to form a patterned hardmask pillar structure. An encapsulating is performed to encapsulate, using an insulating material film, a top surface and sidewall surfaces of said patterned hardmask layer. Subsequent etch processing forms an MTJ stack having sidewalls aligned to the patterned hardmask without impacting MTJ stack performance.
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8.发明授权公开(公告)号：US10585060B2
公开(公告)日：2020-03-10
申请号：US15720986
申请日：2017-09-29
发明人： Hariklia Deligianni , Bruce B. Doris , Damon B. Farmer , Steven J. Holmes , Qinghuang Lin , Nathan P. Marchack , Deborah A. Neumayer , Roy R. Yu
IPC分类号： G01N27/327 , G01N33/94 , H01L21/768 , G01N27/48 , H01L23/48 , H01L23/528 , G01N33/543 , H01L27/15 , G01N33/487
摘要： Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measureable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measureable electrical parameter to computer elements.
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公开(公告)号：US10583282B2
公开(公告)日：2020-03-10
申请号：US15811023
申请日：2017-11-13
摘要： A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
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公开(公告)号：US20200009369A1
公开(公告)日：2020-01-09
申请号：US16573644
申请日：2019-09-17
摘要： A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
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