公开(公告)号：US20200083398A1

公开(公告)日：2020-03-12

申请号：US16681974

申请日：2019-11-13

Applicant: International Business Machines Corporation

Inventor： Steve Holmes ,  Devendra Sadana ,  Stephen W. Bedell ,  Bruce Doris ,  Hariklia Deligianni ,  Jia Chen

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L33/40 ,  H01L33/32

Abstract: A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

公开(公告)号：US20200044113A1

公开(公告)日：2020-02-06

申请号：US16050989

申请日：2018-07-31

Applicant: International Business Machines Corporation

Inventor： Steve Holmes ,  Devendra Sadana ,  Stephen W. Bedell ,  Bruce Doris ,  Hariklia Deligianni ,  Jia Chen

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/62 ,  H01L27/15 ,  H01L33/32

Abstract: A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

公开(公告)号：US11164992B2

公开(公告)日：2021-11-02

申请号：US16681974

申请日：2019-11-13

Applicant: International Business Machines Corporation

Inventor： Steve Holmes ,  Devendra Sadana ,  Stephen W. Bedell ,  Bruce Doris ,  Hariklia Deligianni ,  Jia Chen

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/32 ,  H01L27/15 ,  H01L33/62

Abstract: A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

公开(公告)号：US20200164222A1

公开(公告)日：2020-05-28

申请号：US16199627

申请日：2018-11-26

Applicant: International Business Machines Corporation

Inventor： Steve Holmes ,  Stephen W. Bedell ,  Jia Chen ,  Hariklia Deligianni ,  Devendra K. Sadana

IPC: A61N5/06 ,  A61B5/04 ,  C30B25/02 ,  H01L21/02

Abstract: Embodiments of the invention are directed to an integrated optogenetic device. The integrated optogenetic includes a substrate layer having a first substrate region and a second substrate region. The device further includes a first contact formed over the substrate layer in the first substrate region and a second contact layer formed over the substrate layer in the second region. In addition, the device includes a light-emitting diode (LED) structure communicatively coupled to the first contact layer and a biosensor element communicatively coupled to the second contact layer. The first contact layer is configured to operate as a bottom contact that provides electrical contact to the LED structure. The first contact layer is further configured to be substantially lattice matched with the substrate layer and a bottom layer of the LED structure.

公开(公告)号：US20200119261A1

公开(公告)日：2020-04-16

申请号：US16158791

申请日：2018-10-12

Applicant: International Business Machines Corporation

Inventor： Steve Holmes ,  Bruce B. Doris ,  Hyun K. Lee

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: Embodiments of the present invention are directed to a method for fabricating a magnetoresistive random access memory (MRAM) device. A non-limiting example of the method includes depositing a dielectric layer on a contact arranged on a substrate including a magnetic tunnel junction (MTJ) pillar. The method includes reducing a width of the MTJ pillar. The method further includes depositing an encapsulation layer on the dielectric layer and the MTJ pillar.

公开(公告)号：US10566493B1

公开(公告)日：2020-02-18

申请号：US16050989

申请日：2018-07-31

Applicant: International Business Machines Corporation

Inventor： Steve Holmes ,  Devendra Sadana ,  Stephen W. Bedell ,  Bruce Doris ,  Hariklia Deligianni ,  Jia Chen

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/32 ,  H01L27/15 ,  H01L33/62

Abstract: A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.

公开(公告)号：US20170244024A1

公开(公告)日：2017-08-24

申请号：US15590545

申请日：2017-05-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony J. Annunziata ,  Armand A. Galan ,  Steve Holmes ,  Eric A. Joseph ,  Gen P. Lauer ,  Qinghuang Lin ,  Nathan P. Marchack

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/12 ,  G03F7/70325 ,  G03F7/70425 ,  G11C11/161 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.

公开(公告)号：US09728444B2

公开(公告)日：2017-08-08

申请号：US14985900

申请日：2015-12-31

Applicant: International Business Machines Corporation

Inventor： Guy M. Cohen ,  Sebastian U. Engelmann ,  Steve Holmes ,  Jyotica V. Patel

IPC: G03F7/20 ,  H01R43/00 ,  H05K1/03 ,  H01L21/768 ,  H01L21/027 ,  H01L21/311 ,  H01L23/528

CPC classification number: H01L21/0331 ,  H01L21/0272 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/7688 ,  H01L23/528

Abstract: Lift-off methods for fabricating metal line patterns on a substrate are provided. For example, a method to fabricate a device includes forming a sacrificial layer on a substrate and forming a photoresist mask over the sacrificial layer, isotropically etching a portion of the sacrificial layer exposed through an opening of the photoresist mask to form an undercut region in the sacrificial layer below the photoresist mask, wherein the undercut region defines an overhang structure, and anisotropically etching a portion of the sacrificial layer exposed through the opening of the photoresist mask to form an opening through the sacrificial layer down to the substrate. Metallic material is deposited to cover the photoresist mask and to at least partially fill the opening formed in the sacrificial layer without coating the overhang structure with metallic material. The sacrificial layer is dissolved to lift-off the metallic material covering the photoresist mask.

公开(公告)号：US09705077B2

公开(公告)日：2017-07-11

申请号：US14840176

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony J. Annunziata ,  Armand A. Galan ,  Steve Holmes ,  Eric A. Joseph ,  Gen P. Lauer ,  Qinghuang Lin ,  Nathan P. Marchack

IPC: H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  G03F7/70325 ,  G03F7/70425 ,  G11C11/161 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

公开(公告)号：US20170194195A1

公开(公告)日：2017-07-06

申请号：US14985900

申请日：2015-12-31

Applicant: International Business Machines Corporation

Inventor： Guy M. Cohen ,  Sebastian U. Engelmann ,  Steve Holmes ,  Jyotica V. Patel

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/528 ,  H01L21/027

CPC classification number: H01L21/0331 ,  H01L21/0272 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/7688 ,  H01L23/528

Abstract: Lift-off methods for fabricating metal line patterns on a substrate are provided. For example, a method to fabricate a device includes forming a sacrificial layer on a substrate and forming a photoresist mask over the sacrificial layer, isotropically etching a portion of the sacrificial layer exposed through an opening of the photoresist mask to form an undercut region in the sacrificial layer below the photoresist mask, wherein the undercut region defines an overhang structure, and anisotropically etching a portion of the sacrificial layer exposed through the opening of the photoresist mask to form an opening through the sacrificial layer down to the substrate. Metallic material is deposited to cover the photoresist mask and to at least partially fill the opening formed in the sacrificial layer without coating the overhang structure with metallic material. The sacrificial layer is dissolved to lift-off the metallic material covering the photoresist mask.