Invention Grant
- Patent Title: Oriented alumina substrate for epitaxial growth
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Application No.: US15902266Application Date: 2018-02-22
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Publication No.: US10435815B2Publication Date: 2019-10-08
- Inventor: Morimichi Watanabe , Kei Sato , Kiyoshi Matsushima , Tsutomu Nanataki
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2015-193943 20150930; JP2015-193944 20150930; JP2015-224164 20151116; JP2016-011190 20160125; JP2016-034005 20160225; JP2016-066431 20160329; JP2016-139508 20160714
- Main IPC: C30B29/00
- IPC: C30B29/00 ; C30B29/20 ; C04B35/111 ; C30B19/02 ; C30B25/18 ; C30B29/40 ; H01L21/02 ; H01L21/683 ; H01L33/00 ; C30B1/12 ; C30B19/12 ; C30B28/02 ; C04B35/622 ; C04B35/634 ; C04B35/638 ; C04B35/645 ; H01L33/06 ; H01L33/12 ; H01L33/32 ; H01L33/16
Abstract:
An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.
Public/Granted literature
- US20180179664A1 ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH Public/Granted day:2018-06-28
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