Invention Grant
- Patent Title: Semiconductor imaging device having improved dark current performance
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Application No.: US16113101Application Date: 2018-08-27
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Publication No.: US10797091B2Publication Date: 2020-10-06
- Inventor: Seiji Takahashi , Chen-Jong Wang , Dun-Nian Yaung , Feng-Chi Hung , Feng-Jia Shiu , Jen-Cheng Liu , Jhy-Jyi Sze , Chun-Wei Chang , Wei-Cheng Hsu , Wei Chuang Wu , Yimin Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.
Public/Granted literature
- US20190371838A1 SEMICONDUCTOR IMAGING DEVICE HAVING IMPROVED DARK CURRENT PERFORMANCE Public/Granted day:2019-12-05
Information query
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