Invention Grant
- Patent Title: Forming method of hard mask
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Application No.: US16253380Application Date: 2019-01-22
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Publication No.: US11004684B2Publication Date: 2021-05-11
- Inventor: Mitsuaki Iwashita , Takeshi Nagao , Nobutaka Mizutani , Takashi Tanaka , Koichi Yatsuda , Kazutoshi Iwai , Yuichiro Inatomi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordan LLP
- Priority: JP2016-071472 20160331,JP2016-198426 20161006
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/308 ; C23C18/16 ; C23C16/04 ; C23C14/04 ; C23C18/18 ; C23C18/32 ; C23C18/50 ; H01L21/311 ; H01L21/3213
Abstract:
A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.
Public/Granted literature
- US20190157083A1 FORMING METHOD OF HARD MASK Public/Granted day:2019-05-23
Information query
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