- 专利标题： Bipolar transistors with vertical structures
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申请号： US11079166申请日： 2005-03-14
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公开(公告)号： US20050156195A1公开(公告)日： 2005-07-21
- 发明人: Young-Kai Chen , Lay-Lay Chua , Vincent Houtsma , Rose Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
- 申请人： Young-Kai Chen , Lay-Lay Chua , Vincent Houtsma , Rose Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/737 ; H01L29/739 ; H01L31/0328 ; H01L31/0336
摘要：
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
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