公开(公告)号：US20050156195A1

公开(公告)日：2005-07-21

申请号：US11079166

申请日：2005-03-14

申请人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Houtsma ,  Rose Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

发明人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Houtsma ,  Rose Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L29/739 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

公开(公告)号：US20090029536A1

公开(公告)日：2009-01-29

申请号：US12286239

申请日：2008-09-29

申请人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Etienne Houtsma ,  Rose Fasano Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

发明人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Etienne Houtsma ,  Rose Fasano Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

IPC分类号： H01L21/425

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

公开(公告)号：US06911716B2

公开(公告)日：2005-06-28

申请号：US10243369

申请日：2002-09-13

申请人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Etienne Houtsma ,  Rose Fasano Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

发明人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Etienne Houtsma ,  Rose Fasano Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L27/082

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

摘要翻译： 一种用于制造双极晶体管的方法，包括形成垂直的半导体层序列，在最后形成的半导体层上形成注入掩模，以及将掺杂离子注入到一个或多个半导体层的一部分中。 半导体层的序列包括集电极层，与集电极层接触的基极层和与基极层接触的发射极层。 植入使用其中植入掩模阻止掺杂剂离子渗入层序列的一部分的过程。

公开(公告)号：US07595249B2

公开(公告)日：2009-09-29

申请号：US12286239

申请日：2008-09-29

申请人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Etienne Houtsma ,  Rose Fasano Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

发明人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Etienne Houtsma ,  Rose Fasano Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

摘要翻译： 一种用于制造双极晶体管的方法，包括形成垂直的半导体层序列，在最后形成的半导体层上形成注入掩模，以及将掺杂离子注入到一个或多个半导体层的一部分中。 半导体层的序列包括集电极层，与集电极层接触的基极层和与基极层接触的发射极层。 植入使用其中植入掩模阻止掺杂剂离子渗入层序列的一部分的过程。

公开(公告)号：US20050032323A1

公开(公告)日：2005-02-10

申请号：US10624038

申请日：2003-07-21

申请人： Young-Kai Chen ,  Rose Kopf ,  Wei-Jer Sung ,  Nils Weimann

发明人： Young-Kai Chen ,  Rose Kopf ,  Wei-Jer Sung ,  Nils Weimann

IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732 ,  H01L29/737

CPC分类号： H01L29/66318 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.

摘要翻译： 制造双极晶体管的方法包括在基板上形成集电极，基极和发射极半导体层，使得这些层相对于基板的相邻表面形成垂直的顺序。 该方法包括蚀刻远离半导体层顶部的一部分以露出基底半导体层的一部分，然后在基底层的暴露部分上生长半导体。 半导体层中的顶部之一是距离衬底最远的序列层。 生长的原因使半导体横向围绕半导体层顶部的垂直部分。

公开(公告)号：US07541624B2

公开(公告)日：2009-06-02

申请号：US10624038

申请日：2003-07-21

申请人： Young-Kai Chen ,  Rose Fasano Kopf ,  Wei-Jer Sung ,  Nils Guenter Weimann

发明人： Young-Kai Chen ,  Rose Fasano Kopf ,  Wei-Jer Sung ,  Nils Guenter Weimann

IPC分类号： H01L21/00

CPC分类号： H01L29/66318 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.

摘要翻译： 制造双极晶体管的方法包括在基板上形成集电极，基极和发射极半导体层，使得这些层相对于基板的相邻表面形成垂直的顺序。 该方法包括蚀刻远离半导体层顶部的一部分以露出基底半导体层的一部分，然后在基底层的暴露部分上生长半导体。 半导体层中的顶部之一是距离衬底最远的序列层。 生长的原因使半导体横向围绕半导体层的顶部的垂直部分。