公开(公告)号：US20050156195A1

公开(公告)日：2005-07-21

申请号：US11079166

申请日：2005-03-14

申请人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Houtsma ,  Rose Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

发明人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Houtsma ,  Rose Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L29/739 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

公开(公告)号：US08224134B2

公开(公告)日：2012-07-17

申请号：US12418442

申请日：2009-04-03

申请人： Yves Baeyens ,  Young-Kai Chen ,  Vincent Houtsma ,  Andreas Leven ,  Nils Guenter Weimann

发明人： Yves Baeyens ,  Young-Kai Chen ,  Vincent Houtsma ,  Andreas Leven ,  Nils Guenter Weimann

IPC分类号： G02B6/12 ,  G02B6/28 ,  H04B10/06

CPC分类号： G02B6/4295 ,  G02B6/12 ,  G02B6/1228 ,  H01L31/1105 ,  H04B10/69

摘要： An optoelectronic receiver and associated method of operation.

摘要翻译： 一种光电接收机及其相关操作方法。

公开(公告)号：US20070014508A1

公开(公告)日：2007-01-18

申请号：US11180122

申请日：2005-07-13

申请人： Young-Kai Chen ,  Vincent Houtsma ,  Andreas Leven ,  Nils Weimann

发明人： Young-Kai Chen ,  Vincent Houtsma ,  Andreas Leven ,  Nils Weimann

IPC分类号： G02B6/12 ,  G02B6/30

CPC分类号： G02B6/4204 ,  G02B6/30

摘要： An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.

摘要翻译： 光学集成电路包括半导体本体，位于本体上的半导体光波导和位于光学耦合到波导的双极光电晶体管。 在优选实施例中，晶体管的基极区被配置为吸收在波导中传播的辐射，但是发射极和集电极区域均被配置为不吸收传播辐射。 在另一优选实施例中，波导被配置为沿其中的传播轴引导辐射，并且晶体管沿着波导形成细长的占地面积，所述覆盖区沿着传播轴线的方向延伸。 在另一个优选实施例中，沿着传播轴线的距离比垂直于其的方向至少长三倍。

公开(公告)号：US20050269594A1

公开(公告)日：2005-12-08

申请号：US10859894

申请日：2004-06-03

申请人： Young-Kai Chen ,  Vincent Houtsma ,  Nils Weimann

发明人： Young-Kai Chen ,  Vincent Houtsma ,  Nils Weimann

IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L29/732 ,  H01L29/737 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66242 ,  H01L29/66318 ,  H01L29/7371

摘要： Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.

摘要翻译： 装置包括：掺杂以具有第一电荷载流子极性的第一化合物半导体组合物层; 第二化合物半导体组合物层，被掺杂以具有第二电荷载流子极性并位于第一层上; 第三化合物半导体组合物层，被掺杂以具有第一电荷载流子极性并位于第二层上; 第二层上的基极; 以及插入在基极和第三层之间并且限定基极和第三层之间的电荷载体存取路径距离的间隔环，路径距离在约和之间的范围内。 制造设备的技术。 器件可用作异双极晶体管，特别适用于高频应用。

公开(公告)号：US20120237153A1

公开(公告)日：2012-09-20

申请号：US13112653

申请日：2011-05-20

申请人： Nils Weimann ,  Vincent Houtsma ,  Mahand Achouche

发明人： Nils Weimann ,  Vincent Houtsma ,  Mahand Achouche

IPC分类号： G02F1/01 ,  G02B6/26

CPC分类号： G02B6/131 ,  G02B6/12 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/136 ,  G02B6/305

摘要： An optical device includes a waveguide slab, first and second input port couplers, and first and second output port couplers located over a planar optical substrate. The waveguide slab has a plane of symmetry. The first and second input port couplers extend from the waveguide slab and have an input coupler pair axis located about midway between the first and second input port couplers. The input coupler pair axis is offset at a nonzero first distance from the plane of symmetry. The first and second output port couplers extend from the waveguide slab and have an output coupler pair axis located about midway between the first and second output port couplers. The output coupler pair axis is offset at a different nonzero second distance from the plane of symmetry.

摘要翻译： 光学装置包括波导板，第一和第二输入端口耦合器，以及位于平面光学基板上方的第一和第二输出端口耦合器。 波导板具有对称平面。 第一和第二输入端口耦合器从波导板延伸并且具有位于第一和第二输入端口耦合器之间的中间的输入耦合器对轴。 输入耦合器对轴线偏离对称平面的非零第一距离。 第一和第二输出端口耦合器从波导板延伸并且具有位于第一和第二输出端口耦合器之间的中间的输出耦合器对轴。 输出耦合器对轴线偏离与对称平面不同的非零第二距离。

公开(公告)号：US08676009B2

公开(公告)日：2014-03-18

申请号：US13112653

申请日：2011-05-20

申请人： Nils Weimann ,  Vincent Houtsma ,  Mohand Achouche

发明人： Nils Weimann ,  Vincent Houtsma ,  Mohand Achouche

IPC分类号： G02B6/24

CPC分类号： G02B6/131 ,  G02B6/12 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/136 ,  G02B6/305

摘要： An optical device includes a waveguide slab, first and second input port couplers, and first and second output port couplers located over a planar optical substrate. The waveguide slab has a plane of symmetry. The first and second input port couplers extend from the waveguide slab and have an input coupler pair axis located about midway between the first and second input port couplers. The input coupler pair axis is offset at a nonzero first distance from the plane of symmetry. The first and second output port couplers extend from the waveguide slab and have an output coupler pair axis located about midway between the first and second output port couplers. The output coupler pair axis is offset at a different nonzero second distance from the plane of symmetry.

摘要翻译： 光学装置包括波导板，第一和第二输入端口耦合器，以及位于平面光学基板上方的第一和第二输出端口耦合器。 波导板具有对称平面。 第一和第二输入端口耦合器从波导板延伸并且具有位于第一和第二输入端口耦合器之间的中间的输入耦合器对轴。 输入耦合器对轴线偏离对称平面的非零第一距离。 第一和第二输出端口耦合器从波导板延伸并且具有位于第一和第二输出端口耦合器之间的中间的输出耦合器对轴。 输出耦合器对轴线偏离与对称平面不同的非零第二距离。