发明授权
- 专利标题: Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
- 专利标题(中): 铋钛氧化硅,铋钛氧化硅薄膜,以及薄膜形成方法
-
申请号: US10634841申请日: 2003-08-06
-
公开(公告)号: US06919597B2公开(公告)日: 2005-07-19
- 发明人: Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
- 申请人: Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
- 申请人地址: KR Kyungki-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Kyungki-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR2002-46306 20020806
- 主分类号: C01B33/00
- IPC分类号: C01B33/00 ; C01G29/00 ; C04B35/475 ; C23C14/06 ; C23C16/42 ; H01L21/02 ; H01L21/28 ; H01L21/316 ; H01L21/8242 ; H01L27/108 ; H01L29/51 ; H01L29/76
摘要:
A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.