公开(公告)号：US07374994B2

公开(公告)日：2008-05-20

申请号：US11136456

申请日：2005-05-25

申请人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

发明人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC分类号： H01L21/8242

CPC分类号： H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

摘要翻译： 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US20050272200A1

公开(公告)日：2005-12-08

申请号：US11136456

申请日：2005-05-25

申请人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

发明人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC分类号： C01B33/00 ,  C01G29/00 ,  C04B35/475 ,  C23C14/06 ,  C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51 ,  H01L21/473

CPC分类号： H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

公开(公告)号：US20080293256A1

公开(公告)日：2008-11-27

申请号：US12153104

申请日：2008-05-14

申请人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

发明人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC分类号： H01L21/316

CPC分类号： H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

摘要翻译： 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US06919597B2

公开(公告)日：2005-07-19

申请号：US10634841

申请日：2003-08-06

申请人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

发明人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC分类号： C01B33/00 ,  C01G29/00 ,  C04B35/475 ,  C23C14/06 ,  C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51 ,  H01L29/76

CPC分类号： H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

摘要翻译： 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US07892917B2

公开(公告)日：2011-02-22

申请号：US12153104

申请日：2008-05-14

申请人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

发明人： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC分类号： H01L21/8242

CPC分类号： H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

摘要翻译： 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US07238388B2

公开(公告)日：2007-07-03

申请号：US10704745

申请日：2003-11-12

申请人： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

发明人： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

IPC分类号： B05D3/02

CPC分类号： C04B35/6264 ,  C01G23/002 ,  C01G25/006 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2006/40 ,  C04B35/491 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/44 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/483 ,  H01L21/31691

摘要： A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

摘要翻译： 用于形成铁电薄膜的组合物包括：PZT溶胶 - 凝胶溶液，其包含铅前体的全部或部分水解产物及其全部或部分水解缩聚产物中的至少一种; 锆前体的全部或部分水解产物，其全部或部分水解和缩聚产物，以及具有至少一个羟基离子和至少一种不可水解配体的锆络合物; 以及钛前体，其全部或部分水解缩聚产物和具有至少一个羟基离子和至少一个不可水解配体的钛络合物的全部或部分水解产物; 和包含硅前体的全部或部分水解产物及其全部或部分水解和缩聚产物中的至少一种的Bi 2 SiO 5溶胶 - 凝胶溶液， 和通过回流作为铋前体的三苯基铋获得的结果。

公开(公告)号：US07560042B2

公开(公告)日：2009-07-14

申请号：US11819425

申请日：2007-06-27

申请人： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

发明人： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

IPC分类号： H01L41/18

CPC分类号： C04B35/6264 ,  C01G23/002 ,  C01G25/006 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2006/40 ,  C04B35/491 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/44 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/483 ,  H01L21/31691

摘要： A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

摘要翻译： 用于形成铁电薄膜的组合物包括：PZT溶胶 - 凝胶溶液，其包含铅前体的全部或部分水解产物及其全部或部分水解缩聚产物中的至少一种; 锆前体的全部或部分水解产物，其全部或部分水解和缩聚产物，以及具有至少一个羟基离子和至少一种不可水解配体的锆络合物; 以及钛前体，其全部或部分水解缩聚产物和具有至少一个羟基离子和至少一个不可水解配体的钛络合物的全部或部分水解产物; 和包含硅前体的全部或部分水解产物及其全部或部分水解和缩聚产物中的至少一种的Bi 2 SiO 5溶胶 - 凝胶溶液，以及通过回流作为铋前体的三苯基铋得到的产物。

公开(公告)号：US20080237551A1

公开(公告)日：2008-10-02

申请号：US11819425

申请日：2007-06-27

申请人： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

发明人： Yong-kyun Lee ,  Young-soo Park ,  June-key Lee

IPC分类号： H01B1/02

CPC分类号： C04B35/6264 ,  C01G23/002 ,  C01G25/006 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2006/40 ,  C04B35/491 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/44 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/483 ,  H01L21/31691

摘要： A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

摘要翻译： 用于形成铁电薄膜的组合物包括：PZT溶胶 - 凝胶溶液，其包含铅前体的全部或部分水解产物及其全部或部分水解缩聚产物中的至少一种; 锆前体的全部或部分水解产物，其全部或部分水解和缩聚产物，以及具有至少一个羟基离子和至少一种不可水解配体的锆络合物; 以及钛前体，其全部或部分水解缩聚产物和具有至少一个羟基离子和至少一个不可水解配体的钛络合物的全部或部分水解产物; 和包含硅前体的全部或部分水解产物及其全部或部分水解和缩聚产物中的至少一种的Bi 2 SiO 5溶胶 - 凝胶溶液， 和通过回流作为铋前体的三苯基铋获得的结果。

公开(公告)号：US06593149B2

公开(公告)日：2003-07-15

申请号：US10029030

申请日：2001-12-28

申请人： Yong-kyun Lee ,  June-key Lee

发明人： Yong-kyun Lee ,  June-key Lee

IPC分类号： H01L2100

CPC分类号： H01L21/02205 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1254 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691

摘要： A method for manufacturing a ferroelectric thin film using a sol-gel process comprising the steps of dissolving a Pb precursor using a solvent to prepare a Pb solution and stabilizing a Zr precursor and a Ti precursor to prepare a Zr solution and a Ti solution, respectively, mixing the Zr solution and Ti solution, stirring the Ti—Zr mixed solution with the Pb solution and hydrolyzing to prepare a ferroelectric solution, and forming a ferroelectric thin film on a substrate using the ferroelectric solution.

公开(公告)号：US07182801B2

公开(公告)日：2007-02-27

申请号：US10819917

申请日：2004-04-08

申请人： Soon-ho Kim ,  Jae-young Choi ,  Tae-wan Kim ,  Eun-bum Cho ,  Yong-kyun Lee

发明人： Soon-ho Kim ,  Jae-young Choi ,  Tae-wan Kim ,  Eun-bum Cho ,  Yong-kyun Lee

IPC分类号： B22F1/00

CPC分类号： B22F1/0085 ,  B22F2999/00 ,  B82Y25/00 ,  H01F1/14733 ,  H01M4/52 ,  Y10S977/777 ,  B22F1/0022

摘要： Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders have non-magnetic property and a HCP crystal structure. The method include (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration phenomenon. Therefore, the pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present invention, can keep the well-dispersed state. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.

摘要翻译： 提供非磁性镍粉末及其制备方法。 镍粉具有非磁性和HCP晶体结构。 该方法包括（a）将FCC晶体结构的镍粉分散在有机溶剂中以制备原料分散体，（b）加热原料分散液，将FCC晶体结构的镍粉转化为镍粉， HCP晶体结构。 镍粉不显示磁性聚集现象。 因此，含有本发明的镍粉末的各种电子器件中的内部电极形成用糊料可以保持良好的分散状态。 此外，即使在高频带，由镍粉制成的内电极也可以具有低阻抗值。