摘要:
A method for preparing and forming a thick coating of lead-zirconate-titanate (PZT) on a substrate, includes preparing a first solution by dissolving a lead precursor in a mixed solvent of acid and diol and stirring the resultant, preparing a second solution by dissolving a zirconium precursor and a titanium precursor in a mixed solvent of acid and diol and stirring the same, mixing the first and second solutions to prepare a PZT stock solution, spin-coating the PZT solution on the substrate to form a coated assembly, and heat-treating the coated assembly.
摘要:
A method for surface treatment of nickel nanoparticles using an organic solution, including dispersing nickel nanoparticles in a reductive organic solvent to obtain homogeneity; heating the dispersion of nickel nanoparticles; and separating the solution after treatment, washing and drying. Nickel nanoparticles treated by this method are preferably substantially free of impurities remaining on particle surfaces and thus have smooth surfaces and increased tap density, and the use thereof enables efficient production of a multi-layer ceramic capacitor.
摘要:
There is provided a method of preparing nano scale nickel powders by wet reducing process. An embodiment of the method of preparing nickel powders comprises preparing the first solution formed by mixing water and a base, preparing the second solution formed by mixing a polyol and a nickel compound, preparing a mixture by mixing the first solution and the second solution, heating the mixture, and separating the nickel powders generated during heating.
摘要:
Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders are non-magnetic and have a HCP crystal structure. An exemplary method includes (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration or aggregation phenomenon. Therefore, exemplary pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present disclosure, can be provided in a relatively uniform, well-dispersed state because of the reduced aggregation and agglomeration of the nickel powder. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.
摘要:
A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.
摘要:
A method for manufacturing a ferroelectric thin film using a sol-gel process comprising the steps of dissolving a Pb precursor using a solvent to prepare a Pb solution and stabilizing a Zr precursor and a Ti precursor to prepare a Zr solution and a Ti solution, respectively, mixing the Zr solution and Ti solution, stirring the Ti—Zr mixed solution with the Pb solution and hydrolyzing to prepare a ferroelectric solution, and forming a ferroelectric thin film on a substrate using the ferroelectric solution.
摘要:
Some embodiments include a method of providing an electronic device. The method can comprise: providing a first device substrate; providing one or more first active sections over a second side of the first device substrate at a first device portion of the first device substrate; and after providing the first active section(s) over the second side of the first device substrate at the first device portion, folding a first perimeter portion of the first device substrate toward the first device portion at a first side of the first device substrate so that a first edge portion remains to at least partially frame the first device portion. The first edge portion can comprise a first edge portion width dimension smaller than a first smallest cross dimension of one or more pixel(s) of one or more semiconductor device(s) of the first active section(s). Other embodiments of related methods and devices are also disclosed.
摘要:
A method for surface treatment of nickel nanoparticles using an organic solution, including dispersing nickel nanoparticles in a reductive organic solvent to obtain homogeneity; heating the dispersion of nickel nanoparticles; and separating the solution after treatment, washing and drying. Nickel nanoparticles treated by this method are preferably substantially free of impurities remaining on particle surfaces and thus have smooth surfaces and increased tap density, and the use thereof enables efficient production of a multi-layer ceramic capacitor.
摘要:
A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
摘要:
A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.