Invention Grant
US09303187B2 Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
有权
氧化硅，氮化硅和多晶硅材料的CMP的组成和方法
- Patent Title: Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
- Patent Title (中): 氧化硅，氮化硅和多晶硅材料的CMP的组成和方法
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Application No.: US13947449Application Date: 2013-07-22
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Publication No.: US09303187B2Publication Date: 2016-04-05
- Inventor: Dimitry Dinega , Kevin Moeggenborg , William Ward , Daniel Mateja
- Applicant: Cabot Microelectronics Corporation
- Applicant Address: US IL Aurora
- Assignee: Cabot Microelectronics Corporation
- Current Assignee: Cabot Microelectronics Corporation
- Current Assignee Address: US IL Aurora
- Agent Thomas Omholt; Arlene Hornilla
- Main IPC: H01L21/304
- IPC: H01L21/304 ; C09G1/02 ; H01L21/306 ; C09G1/00 ; C09G1/04 ; C09K13/06 ; C09K3/14 ; B24B1/00 ; H01L21/3105 ; H01L21/321
Abstract:
The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.
Public/Granted literature
- US20150024595A1 Compositions and Methods For CMP of Silicon Oxide, Silicon Nitride, and Polysilicon Materials Public/Granted day:2015-01-22
Information query
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