公开(公告)号：US09303187B2

公开(公告)日：2016-04-05

申请号：US13947449

申请日：2013-07-22

Applicant: Cabot Microelectronics Corporation

Inventor： Dimitry Dinega ,  Kevin Moeggenborg ,  William Ward ,  Daniel Mateja

IPC: H01L21/304 ,  C09G1/02 ,  H01L21/306 ,  C09G1/00 ,  C09G1/04 ,  C09K13/06 ,  C09K3/14 ,  B24B1/00 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

Abstract translation: 本发明提供了一种用于抛光包含二氧化硅，氮化硅和多晶硅的衬底的化学机械抛光方法。 该方法包括用CMP组合物研磨衬底的表面以从其中去除至少一些二氧化硅，氮化硅和多晶硅。 该CMP组合物包含悬浮在pH约为3至9.5并含有阳离子聚合物的水性载体中的颗粒状二氧化铈磨料; 其中阳离子聚合物由季甲基丙烯酰氧基烷基铵聚合物组成。

公开(公告)号：US20150024595A1

公开(公告)日：2015-01-22

申请号：US13947449

申请日：2013-07-22

Applicant: Cabot Microelectronics Corporation

Inventor： Dimitry Dinega ,  Kevin Moeggenborg ,  William Ward ,  Daniel Mateja

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

Abstract translation: 本发明提供了一种用于抛光包含二氧化硅，氮化硅和多晶硅的衬底的化学机械抛光方法。 该方法包括用CMP组合物研磨衬底的表面以从其中去除至少一些二氧化硅，氮化硅和多晶硅。 该CMP组合物包含悬浮在pH约为3至9.5并含有阳离子聚合物的水性载体中的颗粒状二氧化铈磨料; 其中阳离子聚合物由季甲基丙烯酰氧基烷基铵聚合物组成。