公开(公告)号：EP2444845A1

公开(公告)日：2012-04-25

申请号：EP10789454.5

申请日：2010-06-14

申请人： JSR Corporation

发明人： SERIZAWA, Ryuichi ,  MATSUMURA, Nobuji ,  SAKAKIBARA, Hirokazu

IPC分类号： G03F7/004 ,  C08F220/18 ,  C09K3/00 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  C08F8/34 ,  C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  G03F7/0046 ,  G03F7/029 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： A radiation-sensitive resin composition includes (A) an acid-labile group-containing resin, and (C) a compound shown by the following general formula (i).

wherein R 1 represents a hydrogen atom or the like, R 2 represents a single bond or the like, R 3 represents a linear monovalent hydrocarbon group having 1 to 10 carbon atoms in which some or all of the hydrogen atoms may be substituted with a fluorine atom, or the like, and X + represents an onium cation.

摘要翻译： 放射线敏感性树脂组合物含有（A）含酸不稳定基团的树脂和（C）下述通式（i）所示的化合物。 其中R 1表示氢原子等，R 2表示单键等，R 3表示其中一些或全部氢原子可被氟原子取代的具有1至10个碳原子的直链一价烃基，或 类似物，并且X +代表鎓阳离子。

公开(公告)号：EP2060949A1

公开(公告)日：2009-05-20

申请号：EP07793084.0

申请日：2007-08-28

申请人： JSR Corporation

发明人： MATSUMURA, Nobuji ,  SHIMIZU, Daisuke ,  KAI, Toshiyuki

IPC分类号： G03F7/004 ,  C07C309/12 ,  C07C381/12 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/004 ,  C07C309/12 ,  C07C381/12 ,  G03F7/0045

摘要： A radiation-sensitive composition contains (A) a low-molecular-weight compound having one or more acid-dissociable groups which decompose by the action of an acid to enhance solubility in an alkaline developing solution and one or more radiation-sensitive acid-generating groups which generate an acid upon application of an active ray or radiation per molecule, and having a polystyrene-reduced number-average molecular weight (Mn) measured by gel permeation chromatography (GPC) of 500 to 4,000, and (B) a solvent.

摘要翻译： 的放射线敏感性组合物含有（A）具有会通过酸的作用分解的一种或多种酸离解性基团，以提高在碱性显影溶液和一种或辐射敏感的酸产生更多的溶解度低分子量化合物 其中在当每个分子的活性射线或辐射的应用酸生成和具有聚苯乙烯换算的数均分子量（Mn）为500凝胶渗透色谱法（GPC）测量到4,000，和（B）的溶剂的基团。

公开(公告)号：EP2048541A1

公开(公告)日：2009-04-15

申请号：EP07791450.5

申请日：2007-07-27

申请人： JSR Corporation

发明人： SUGITA, Hikaru ,  MATSUMURA, Nobuji ,  SHIMIZU, Daisuke ,  KAI, Toshiyuki ,  SHIMOKAWA, Tsutomu

IPC分类号： G03F7/26 ,  G03F7/075 ,  G03F7/11 ,  G03F7/38

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/265

摘要： A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.

摘要翻译： 提供了适合用于使用电子束微图案（EB），X-射线，或极紫外辐射（EUV）的图案形成方法。 该方法包括按以下顺序的下列步骤：（1）形成和固化下层膜含辐射敏感性酸产生哪些基因在暴露于辐射在衬底酸的速率的步骤，（2）的步骤 通过掩模照射下层膜与辐射而导致酸在上述下层电影的暴露区域被选择性地产生，（3）上形成上层的步骤膜不含有对辐射敏感的 酸产生剂，但含有能够通过酸的作用而聚合或交联的组合物，（4）由膜聚合形成固化或在上层的区域选择性地交联的工序的膜对应于下的面积 在已产生的酸 - 层的电影，以及（5）除去所述上层膜对应于其中的酸没有被产生的下层片的区域的面积的步骤。

公开(公告)号：EP1961739B1

公开(公告)日：2012-10-17

申请号：EP06834591.7

申请日：2006-12-13

申请人： JSR Corporation

发明人： NAGAI, Tomoki ,  EBATA, Takuma ,  MATSUMURA, Nobuji

IPC分类号： C07C381/12 ,  C08F220/28 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  C07C309/06 ,  C07C309/19 ,  C07C381/12 ,  C07C2602/42 ,  C08F220/38 ,  G03F7/0397

公开(公告)号：EP2034364A1

公开(公告)日：2009-03-11

申请号：EP07767364.8

申请日：2007-06-21

申请人： JSR Corporation

发明人： SHIMIZU, Daisuke ,  SUGITA, Hikaru ,  MATSUMURA, Nobuji ,  KAI, Toshiyuki ,  SHIMOKAWA, Tsutomu

IPC分类号： G03F7/26 ,  G03F7/004

CPC分类号： C07D333/18 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/265

摘要： A method for forming a pattern contains (1) a step of forming an underlayer film containing (C) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (D) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (E) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

摘要翻译： 一种用于形成图案的方法，包含（1）下层膜含（C）的形成能够在暴露于酸生成对放射线或（D）的辐射敏感基发生器能够产生的辐射敏感产酸剂的步骤 在暴露于上的基板放射线的基座; （2）通过掩模以预定的图案照射该下层电影辐射射线使暴露下层膜部分的步骤已经通过预定图案选择性地暴露; （3）形成（E）到有机薄膜上下层膜，以便得到与形成在暴露的下层膜的部分有机薄膜露出的下层膜的部分的化学键合的步骤; 和（4）中除去所述有机薄膜上形成下层膜的除露出的下层膜的部分的面积的步骤。

公开(公告)号：EP2131240A1

公开(公告)日：2009-12-09

申请号：EP08722276.6

申请日：2008-03-17

申请人： JSR Corporation

发明人： NISHIMURA, Yukio ,  SAKAI, Kaori ,  MATSUMURA, Nobuji ,  SUGIURA, Makoto ,  NAKAMURA, Atsushi ,  WAKAMATSU, Gouji ,  ANNO, Yuusuke

IPC分类号： G03F7/039 ,  G03F7/004 ,  G03F7/40 ,  H01L21/027

CPC分类号： G03F7/0035 ,  G03F7/0397 ,  G03F7/2024 ,  G03F7/2041 ,  G03F7/40

摘要： A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. According to the method, the pattern formed in the first layer is made inactive to radiation applied to when forming a second layer pattern, whereby it is possible to form the second layer pattern while maintaining the first layer pattern as is without making it soluble in alkali. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working.

摘要翻译： 提供了一种使用在液浸光刻工艺双重曝光图案形成图案化的方法。 。根据该方法，在第一层中形成的图案是由惰性的辐射应用于当形成第二层图案，从而能够在保持第一层图案作为是不使其溶于碱性以形成第二层图案 ， 图案化方法包括使用第一抗蚀剂层形成用组合物，使第一图案不活动的一个步骤上的衬底上形成的第一图案的步骤，在衬底上形成的第二图案的步骤在其上的图案已被使用的成形 第二抗蚀剂层形成用组合物和所述第二抗蚀剂层暴露于辐射，并且显影曝光的抗蚀剂步骤层，以形成在所述第一图案的空间区域的第二图案。 第一抗蚀剂层形成用组合物含有从加速所述第一层的转化率的交联剂正型负性工作的。

公开(公告)号：EP1961739A1

公开(公告)日：2008-08-27

申请号：EP06834591.7

申请日：2006-12-13

申请人： JSR Corporation

发明人： NAGAI, Tomoki ,  EBATA, Takuma ,  MATSUMURA, Nobuji

IPC分类号： C07C381/12 ,  C08F220/28 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  C07C309/06 ,  C07C309/19 ,  C07C381/12 ,  C07C2602/42 ,  C08F220/38 ,  G03F7/0397

摘要： A radiation-sensitive resin composition which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, exhibiting high resolution performance, excellent DOF and LER, and high resistance to a liquid medium used in liquid immersion lithography is provided. Also provided are a polymer which can be used in the composition, a novel compound useful for synthesizing the polymer, and a method of producing the composition. A radiation-sensitive resin composition having an excellent resistance to a liquid medium can be obtained by using the novel compound shown by the following formula (1),

wherein R 1 represents a methyl group or a hydrogen atom, R 2 , R 3 and R 4 individually represent a substituted or unsubstituted monovalent organic group having 1 to 10 carbon atoms, n is an integer from 0 to 3, A represents a methylene group, a linear or branched alkylene group having 2 to 10 carbon atoms, or an arylene group, and X - represents a counter ion of S + .