利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.014 秒)

    FLEXIBLE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SAME, AND IMAGE DISPLAY DEVICE
    1.
    发明公开
    FLEXIBLE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SAME, AND IMAGE DISPLAY DEVICE 审中-公开
    柔性薄板黑色，VERFAHREN ZU SEINER HERSTELLUNG UND BILDANZEIGEVORRICHTUNG

    公开(公告)号：EP2571043A1

    公开(公告)日：2013-03-20

    申请号：EP11780349.4

    申请日：2011-04-22

    申请人： Panasonic Corporation

    发明人： SUZUKI, Takeshi ,  HIRANO, Koichi

    IPC分类号： H01L21/336 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  H01L29/41 ,  H01L29/417 ,  H01L29/786 ,  H01L51/50

    CPC分类号： H01L29/78603 ,  H01L27/0688 ,  H01L27/1218 ,  H01L27/1251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3246 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0023 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/0545 ,  H01L2251/5338

    摘要： There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (A) providing a metal foil; (B) forming an insulating layer on the metal foil, the insulating layer having a portion serving as a gate insulating film; (C) forming a supporting substrate on the insulating layer; (D) etching away a part of the metal foil to form a source electrode and a drain electrode therefrom; (E) forming a semiconductor layer in a clearance portion located between the source electrode and the drain electrode by making use of the source and drain electrodes as a bank member; and (F) forming a resin film layer over the insulating layer such that the resin film layer covers the semiconductor layer, the source electrode and the drain electrode. In the step (F), a part of the resin film layer interfits with the clearance portion located between the source and drain electrodes.

    摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 本发明的方法包括以下步骤：（A）提供金属箔; （B）在所述金属箔上形成绝缘层，所述绝缘层具有用作栅极绝缘膜的部分; （C）在所述绝缘层上形成支撑基板; （D）蚀刻一部分金属箔从而形成源电极和漏电极; （E）通过利用源电极和漏电极作为堤构件在位于源电极和漏电极之间的间隙部分中形成半导体层; 和（F）在所述绝缘层上形成树脂膜层，使得所述树脂膜层覆盖所述半导体层，所述源电极和所述漏电极。 在步骤（F）中，树脂膜层的一部分与位于源极和漏极之间的间隙部分相互配合。