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1.发明公开GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开III族氮化物半导体设备的情况的III族氮化物半导体器件的外延和方法
公开(公告)号：EP2410580A4
公开(公告)日：2013-11-06
申请号：EP09812406
申请日：2009-04-24
发明人： KYONO TAKASHI , YOSHIZUMI YUSUKE , ENYA YOHEI , AKITA KATSUSHI , UENO MASAKI , SUMITOMO TAKAMICHI , NAKAMURA TAKAO
IPC分类号： H01L33/00 , B82Y10/00 , B82Y20/00 , B82Y40/00 , C30B29/38 , H01L21/02 , H01L21/205 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
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2.发明公开GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM 审中-公开甘光半导体元件，其制造方法光学甘半导体元件，外延片和方法为建设GaN系半导体薄膜
公开(公告)号：EP2312651A4
公开(公告)日：2015-05-27
申请号：EP09804942
申请日：2009-08-03
发明人： ENYA YOHEI , YOSHIZUMI YUSUKE , UENO MASAKI , AKITA KATSUSHI , KYONO TAKASHI , SUMITOMO TAKAMICHI , NAKAMURA TAKAO
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333
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3.发明公开METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR, METHOD FOR FABRICATING NITRIDE-BASED SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING EPITAXIAL WAFER 审中-公开用于生产p型氮化镓半导体，制造方法的半导体元件的氮化物和方法，用于制造外延晶片的
公开(公告)号：EP2333819A4
公开(公告)日：2013-11-20
申请号：EP09819023
申请日：2009-05-22
发明人： UENO MASAKI , YOSHIZUMI YUSUKE , NAKAMURA TAKAO
IPC分类号： H01L21/205 , C23C16/34 , C30B25/18 , C30B29/38 , C30B29/40 , C30B33/00 , H01L21/02 , H01L33/00
CPC分类号： H01L21/02389 , C30B25/183 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is formed on a supporting base 13 in a reactor 10. An organometallic source and ammonia are supplied to the reactor 10 to grow the GaN semiconductor layer 17 on a GaN semiconductor layer 15. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regions 15 and 17 are grown, an atmosphere 19 containing at least one of monomethylamine and monoethylamine is prepared in the reactor 10. After the atmosphere 19 is prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region 17. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductor 17a and an epitaxial wafer E has been fabricated.
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公开(公告)号：EP1571716A4
公开(公告)日：2012-07-25
申请号：EP04771196
申请日：2004-08-04
发明人： NAGAI YOUICHI , KIYAMA MAKOTO , NAKAMURA TAKAO , SAKURADA TAKASHI , AKITA KATSUSHI , UEMATSU KOJI , IKEDA AYAKO , KATAYAMA KOJI , YOSHIMOTO SUSUMU
IPC分类号： H01L33/00 , H01L29/24 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
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公开(公告)号：EP2403023A4
公开(公告)日：2013-11-27
申请号：EP10746044
申请日：2010-01-27
发明人： YOSHIZUMI YUSUKE , UENO MASAKI , NAKAMURA TAKAO , UEDA TOSHIO , TAKASUKA EIRYOU , SENDA YASUHIKO
IPC分类号： H01L33/32 , H01L21/205 , H01L33/06 , H01S5/343
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01S5/34333 , H01S2304/04
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6.发明公开GROUP-III NITRIDE SEMICONDUCTOR ELEMENT, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING A GROUP-III NITRIDE SEMICONDUCTOR ELEMENT 审中-公开III族氮化物半导体BAULE MENT，外延基板及其制造方法Ⅲ族氮化物半导体元件
公开(公告)号：EP2456025A4
公开(公告)日：2015-01-21
申请号：EP10799834
申请日：2010-07-13
发明人： ENYA YOHEI , YOSHIZUMI YUSUKE , KYONO TAKASHI , SUMITOMO TAKAMICHI , AKITA KATSUSHI , UENO MASAKI , NAKAMURA TAKAO
IPC分类号： H01S5/343 , H01L21/205
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
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7.发明公开GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR PREPARING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT 审中-公开III族氮化物半导体激光元件及其制造方法III族氮化物半导体激光元件
公开(公告)号：EP2487765A4
公开(公告)日：2014-12-31
申请号：EP10820602
申请日：2010-09-29
发明人： YOSHIZUMI YUSUKE , ENYA YOHEI , KYONO TAKASHI , ADACHI MASAHIRO , TOKUYAMA SHINJI , SUMITOMO TAKAMICHI , UENO MASAKI , IKEGAMI TAKATOSHI , KATAYAMA KOJI , NAKAMURA TAKAO
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/1085 , H01S5/16 , H01S5/2009 , H01S5/2201 , H01S5/3213 , H01S5/34333 , H01S2301/14
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公开(公告)号：EP2381487A4
公开(公告)日：2013-07-24
申请号：EP09838362
申请日：2009-11-11
CPC分类号： C30B25/18 , C30B29/403 , H01L33/007
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9.发明公开III NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF, III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE 审中-公开III氮化物半导体晶体及其生产过程中，族氮化物半导体元及其制造方法和发光器件
公开(公告)号：EP1748470A4
公开(公告)日：2011-07-27
申请号：EP05739204
申请日：2005-05-13
发明人： NAKAHATA SEIJI , NAKAHATA HIDEAKI , UEMATSU KOJI , KIYAMA MAKOTO , NAGAI YOUICHI , NAKAMURA TAKAO
IPC分类号： H01L21/205 , C23C16/34 , H01L21/20 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01L33/40 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L33/007 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02645 , H01L33/0075 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12032 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
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10.发明公开GALLIUM NITRIDE EPITAXIAL WAFER, AND METHOD OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开氮化镓外延晶片及其制造方法的氮化镓半导体发光COMPONENT
公开(公告)号：EP2131388A4
公开(公告)日：2010-11-03
申请号：EP08711671
申请日：2008-02-20
发明人： YOSHIZUMI YUSUKE , UENO MASAKI , NAKAMURA TAKAO
CPC分类号： H01L21/02389 , B82Y20/00 , C30B29/403 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02661 , H01L33/16 , H01S5/0201 , H01S5/34333
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