公开(公告)号：EP4425565A3

公开(公告)日：2024-09-18

申请号：EP24160704.3

申请日：2024-02-29

申请人： Hon Hai Precision Industry Co., Ltd.

发明人： HUNG, Chia-Lung ,  HSIAO, Yi-Kai ,  KUO, Hao-Chung

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/12

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/7813 ,  H01L21/049 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/42368

摘要： A method of manufacturing a semiconductor device includes providing a substrate, in which the substrate is SiC base. The substrate, from bottom to top, sequentially includes an N-type heavy doping base layer, an N-type light doping layer, a P-well region, and an N-type heavy doping layer. The substrate is etched by using a patterned mask to form a gate trench and a channel region defined by the gate trench. The channel region is shielded by the patterned mask. An ion implant is performed to the gate trench such that a shielding implant layer is formed on the bottom of the gate trench. An oxidation process is performed to the gate trench thereby forming a gate oxide layer. The oxidation rate at the bottom of the gate trench is faster than the oxidation rate at the sidewall of the gate trench. A semiconductor device is also provided.

公开(公告)号：EP4421877A1

公开(公告)日：2024-08-28

申请号：EP23158515.9

申请日：2023-02-24

申请人： Infineon Technologies Austria AG

发明人： WUTTE, Britta ,  MARAK, Arnold ,  FEIL, Thomas Martin

IPC分类号： H01L29/78 ,  H01L29/861 ,  H01L29/06

CPC分类号： H01L29/7813 ,  H01L29/7804 ,  H01L29/407 ,  H01L29/0696 ,  H01L29/861 ,  H01L29/417

摘要： The disclosure relates to a semiconductor die (1) comprising a vertical transistor device (10) having a gate electrode (11) in a gate trench (12), and a MOS gated diode MGD (20) having an MGD gate electrode (21) in an MGD trench (22), wherein the gate trench (12) of the transistor device (10) has an elongated extension in a first lateral direction (31), and wherein the transistor device (10) and the MOS gated diode (20) are arranged consecutive in the first lateral direction (31).

公开(公告)号：EP4421876A1

公开(公告)日：2024-08-28

申请号：EP22877674.6

申请日：2022-09-28

申请人： Shindengen Electric Manufacturing Co., Ltd.

发明人： ENDO, Kanae ,  INOUE, Tadashi ,  SHIBATA, Yukihiro

IPC分类号： H01L29/74

CPC分类号： H01L29/0696 ,  H01L29/1016 ,  H01L29/102 ,  H01L29/744

摘要： There is provided a thyristor with desensitized gate sensitivity. The invention includes: a first P-type semiconductor layer; a first N-type semiconductor layer disposed in contact with the first P-type semiconductor layer; a second P-type semiconductor layer disposed in contact with the first N-type semiconductor layer; a second N-type semiconductor layer disposed in contact with the second P-type semiconductor layer; a third P-type semiconductor layer that is disposed in contact with the second P-type semiconductor layer and has an impurity concentration higher than that of the second P-type semiconductor layer; a gate electrode; a cathode electrode; and a fourth P-type semiconductor layer that is in contact with each of the second P-type semiconductor layer and the second N-type semiconductor layer and has an impurity concentration higher than that of the second P-type semiconductor layer. The third P-type semiconductor layer and the fourth P-type semiconductor layer are separated from each other by the second P-type semiconductor layer, and the third P-type semiconductor layer and the second N-type semiconductor layer are separated from each other by the second P-type semiconductor layer.

公开(公告)号：EP3571722B1

公开(公告)日：2024-08-28

申请号：EP18702873.3

申请日：2018-01-17

IPC分类号： H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/4238 ,  H01L29/0696 ,  H01L29/7395 ,  H01L29/66068

公开(公告)号：EP4415052A1

公开(公告)日：2024-08-14

申请号：EP24155182.9

申请日：2024-02-01

申请人： GE Aviation Systems LLC

发明人： HITCHCOCK, Collin William ,  KENNERLY, Stacey ,  STEVANOVIC, Ljubisa

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/0696 ,  H01L29/1095

摘要： A semiconductor device cell (150) includes a JFET region (29) adjacent a channel region (28) and defines a periphery of the semiconductor device cell (150). The JFET region (29) includes a JFET segment (29c) having a first end (29a) disposed proximal a first corner (69a) of the semiconductor device cell (150) and an opposing second end (29b) proximal a second corner (69b) of the semiconductor device cell (150). The JFET segment (29c) has a first width (W1) between the first end (29a) and the second end (29b) that is greater than a second width (W2) of the JFET region (29) the first end (29a) and the second end (29b).

公开(公告)号：EP4411830A1

公开(公告)日：2024-08-07

申请号：EP24153621.8

申请日：2024-01-24

申请人： STMicroelectronics International N.V.

发明人： SAGGIO, Mario Giuseppe ,  CAMALLERI, Cateno Marco ,  SCALIA, Laura Letizia ,  GUARNERA, Alfio

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/1095 ,  H01L29/0696 ,  H01L29/7802

摘要： MOSFET device (50) of a vertical conduction type having a substrate (55) of silicon carbide having a first conductivity type and a main face (55A). A body region (60), of a second conductivity type, extends into the substrate (55), from the main face, and has a first depth along a first direction (Z). A first and a second source region (65) of the first conductivity type extend inside the body region (60), starting from the main face, parallel to each other, have a second depth, along the first direction (Z), smaller than the first depth and are mutually spaced by a distance, in a second direction (X), perpendicular to the first direction (Z). A body contact region (80), of the second conductivity type, extends inside the body region (60), between the first and the second source regions (65), and has a third depth, along the first direction, greater than or equal to the second depth (Z). The body contact region (80) has a width, in the second direction (X) and a length, in the extension direction (Y) of the source regions, much greater than its width.

公开(公告)号：EP4406008A1

公开(公告)日：2024-07-31

申请号：EP22793906.3

申请日：2022-09-21

申请人： ACORN SEMI, LLC

发明人： CLIFTON, Paul, A.

IPC分类号： H01L21/84 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L27/02

CPC分类号： H01L21/84 ,  H01L21/823481 ,  H01L27/1203 ,  H01L27/088 ,  H01L29/78645 ,  H01L29/78654 ,  H01L27/0207 ,  H01L29/78648 ,  H01L29/1054 ,  H01L29/78 ,  H01L29/0696 ,  H01L29/66628 ,  H01L29/7849 ,  H01L21/26506 ,  H01L21/76251 ,  H01L21/76283

公开(公告)号：EP4402722A1

公开(公告)日：2024-07-24

申请号：EP22870548.9

申请日：2022-09-09

申请人： Analog Power Conversion LLC ,  Kyosan Electric Mfg. Co., Ltd.

发明人： GENDRON-HANSEN, Amaury ,  SDRULLA, Dumitru Gheorge ,  SZEPESI, Leslie Louis ,  TAKATA, Tetsuya ,  YUZURIHARA, Itsuo ,  YONEYAMA, Tomohiro ,  HOSOYAMADA, Yu

IPC分类号： H01L27/07 ,  H01L29/78 ,  H01L29/872

CPC分类号： H01L29/872 ,  H01L29/1608 ,  H01L29/0619 ,  H01L29/7806 ,  H01L29/0696 ,  H01L29/7395 ,  H01L27/0727

公开(公告)号：EP4394881A1

公开(公告)日：2024-07-03

申请号：EP22217357.7

申请日：2022-12-30

申请人： Hitachi Energy Ltd

发明人： BUITRAGO, Elizabeth ,  DE-MICHIELIS, Luca ,  VITALE, Wolfgang Amadeus ,  NIKBERG, Babak

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L21/331 ,  H01L29/739 ,  H01L29/417

CPC分类号： H01L29/0696 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/417

摘要： The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (3) and at least two trenches, namely a first-type trench (51) and a second-type trench (52). The semiconductor body comprises a drift region (14) arranged vertically between the top side and the bottom side and at least two base regions (13a, 13b) each arranged vertically between the drift region and the top side. The semiconductor body further comprises an injection region (12) adjoining the first base region. The first main electrode is in electrical contact with the injection region. The gate electrode extends into the first-type trench. The second-type trench is free of the gate electrode. The second-type trench extends deeper into the semiconductor body than the first-type trench.

公开(公告)号：EP2707902B1

公开(公告)日：2018-11-28

申请号：EP12724221.2

申请日：2012-05-09

申请人： Analog Devices, Inc.

发明人： COYNE, Edward

IPC分类号： H01L27/02 ,  H01L29/06 ,  H01L29/74 ,  H01L29/732

CPC分类号： H01L27/0262 ,  H01L29/0696 ,  H01L29/732 ,  H01L29/7436

摘要： An apparatus includes an electrostatic discharge (ESD) protection device. In one embodiment, the protection device electrically coupled between a first node and a second node of an internal circuit to be protected from transient electrical events. The protection device includes a bipolar device or a silicon-controlled rectifier (SCR). The bipolar device or SCR can have a modified structure or additional circuitry to have a selected holding voltage and/or trigger voltage to provide protection over the internal circuit. The additional circuitry can include one or more resistors, one or more diodes, and/or a timer circuit to adjust the trigger and/or holding voltages of the bipolar device or SCR to a desired level. The protection device can provide protection over a transient voltage that ranges, for example, from about 100 V to 330V.